Method for manufacturing stretchable thin film transistor
    22.
    发明授权
    Method for manufacturing stretchable thin film transistor 有权
    制造可拉伸薄膜晶体管的方法

    公开(公告)号:US08912094B2

    公开(公告)日:2014-12-16

    申请号:US13846437

    申请日:2013-03-18

    CPC classification number: H01L29/78603 H01L27/1218 H01L27/1262

    Abstract: Provided is a method for manufacturing a stretchable thin film transistor. The method for manufacturing a stretchable thin film transistor includes forming a mold substrate, forming a stretchable insulator on the mold substrate, forming a flat substrate on the stretchable insulator, removing the mold substrate, forming discontinuous and corrugated wires on the stretchable insulator, forming a thin film transistor connected between the wires, and removing the flat substrate.

    Abstract translation: 提供一种制造可拉伸薄膜晶体管的方法。 制造可伸缩薄膜晶体管的方法包括:在模具基板上形成模具基板,形成可拉伸绝缘体,在可伸缩绝缘体上形成平坦的基板,去除模具基板,在可拉伸的绝缘体上形成不连续的和波纹的导线, 连接在电线之间的薄膜晶体管,以及去除平坦的基板。

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