Composition for tungsten CMP
    21.
    发明授权
    Composition for tungsten CMP 有权
    钨CMP的组成

    公开(公告)号:US09566686B2

    公开(公告)日:2017-02-14

    申请号:US14965168

    申请日:2015-12-10

    摘要: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

    摘要翻译: 一种用于抛光具有钨层的基材的化学机械抛光组合物包括水基液体载体,分散在液体载体中的胶体二氧化硅磨料并具有至少6mV的永久正电荷,液体载体中的溶液中的胺化合物 ,和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触,使抛光组合物相对于基底移动,并研磨基底以从基底去除一部分钨,从而抛光 基质。

    Composition for tungsten CMP
    22.
    发明授权
    Composition for tungsten CMP 有权
    钨CMP的组成

    公开(公告)号:US09303188B2

    公开(公告)日:2016-04-05

    申请号:US14203647

    申请日:2014-03-11

    摘要: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, and a polycationic amine compound in solution in the liquid carrier. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

    摘要翻译: 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体,分散在液体载体中的具有至少6mV的永久正电荷的胶态二氧化硅磨料和在该溶液中的聚阳离子胺化合物 液体载体。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触,使抛光组合物相对于基底移动,并研磨基底以从基底去除一部分钨,从而抛光 基质。

    COMPOSITION FOR TUNGSTEN BUFFING
    25.
    发明申请
    COMPOSITION FOR TUNGSTEN BUFFING 有权
    用于触发缓冲的组合物

    公开(公告)号:US20150267081A1

    公开(公告)日:2015-09-24

    申请号:US14222086

    申请日:2014-03-21

    IPC分类号: C09G1/02 C23F3/03 B24B37/04

    CPC分类号: C09G1/02 B24B37/044 C23F3/06

    摘要: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier and colloidal silica abrasive particles dispersed in the liquid carrier. The colloidal silica abrasive particles have a permanent positive charge of at least 6 mV. About 30 percent or more of the colloidal silica abrasive particles include three or more aggregated primary particles.

    摘要翻译: 用于研磨具有钨层的基材的化学机械抛光组合物包括分散在液体载体中的水性液体载体和胶态二氧化硅磨料颗粒。 胶体二氧化硅磨料颗粒具有至少6mV的永久正电荷。 大约30%以上的胶态二氧化硅磨料颗粒包括三个或更多个聚集的一次粒子。

    CMP COMPOSITIONS AND METHODS FOR POLISHING NICKEL PHOSPHOROUS SURFACES
    26.
    发明申请
    CMP COMPOSITIONS AND METHODS FOR POLISHING NICKEL PHOSPHOROUS SURFACES 审中-公开
    CMP组合物和抛光镍磷光体表面的方法

    公开(公告)号:US20150152289A1

    公开(公告)日:2015-06-04

    申请号:US14094921

    申请日:2013-12-03

    IPC分类号: C09G1/02 C23F3/06

    摘要: Chemical mechanical polishing (CMP) compositions and methods for planarizing a nickel phosphorus (NiP) substrate are described. A NiP CMP method comprises abrading a surface of the substrate with a CMP composition. The CMP composition comprises a colloidal silica abrasive suspended in an aqueous carrier having a pH of less than 2, and containing a primary oxidizing agent comprising hydrogen peroxide, a secondary oxidizing agent comprising a metal ion capable of reversible oxidation and reduction in the presence of NiP and hydrogen peroxide, a chelating agent, and glycine. The chelating agent comprises two or three carboxylic acid substituents capable of chelating to the metal ion of the secondary oxidizing agent.

    摘要翻译: 描述了用于平面化镍磷(NiP)衬底的化学机械抛光(CMP)组合物和方法。 NiP CMP方法包括用CMP组合物研磨衬底的表面。 CMP组合物包含悬浮在pH小于2的水性载体中的胶体二氧化硅磨料,并且含有包含过氧化氢的初级氧化剂,包含能够在NiP存在下可逆可氧化和还原的金属离子的二次氧化剂 和过氧化氢,螯合剂和甘氨酸。 螯合剂包含能够与二次氧化剂的金属离子螯合的两个或三个羧酸取代基。

    Chemical-mechanical polishing composition containing zirconia and metal oxidizer
    27.
    发明授权
    Chemical-mechanical polishing composition containing zirconia and metal oxidizer 有权
    含氧化锆和金属氧化剂的化学机械抛光组合物

    公开(公告)号:US08920667B2

    公开(公告)日:2014-12-30

    申请号:US13754413

    申请日:2013-01-30

    IPC分类号: C03C15/00 C09G1/02

    摘要: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles, wherein the abrasive particles comprise zirconia, (b) at least one metal ion oxidizer, wherein the at least one metal ion oxidizer comprises metal ions of Co3+, Au+, Ag+, Pt2+, Hg2+, Cr3+, Fe3+, Ce4+, or Cu2+, and (c) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 7, and wherein the chemical-mechanical polishing composition does not contain a peroxy-type oxidizer.

    摘要翻译: 本发明提供化学机械抛光组合物和用化学机械抛光组合物对基材进行化学机械研磨的方法。 抛光组合物包含(a)研磨颗粒,其中磨料颗粒包括氧化锆,(b)至少一种金属离子氧化剂,其中至少一种金属离子氧化剂包括Co3 +,Au +,Ag +,Pt2 +,Hg2 +,Cr3 + ,Fe3 +,Ce4 +或Cu2 +,和(c)水性载体,其中化学机械抛光组合物的pH在约1至约7的范围内,并且其中化学机械抛光组合物不含有过氧化物 型氧化器。

    Composition and method for metal CMP

    公开(公告)号:US10968366B2

    公开(公告)日:2021-04-06

    申请号:US16208742

    申请日:2018-12-04

    摘要: A chemical mechanical polishing composition for polishing a substrate includes a liquid carrier and cationic metal oxide abrasive particles dispersed in the liquid carrier. The cationic metal oxide abrasive particles have a surface modified with at least one compound consisting of a silyl group having at least one quaternary ammonium group. A method for chemical mechanical polishing a substrate including a metal layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the metal layer from the substrate and thereby polish the substrate.