公开(公告)号：US20160365462A1

公开(公告)日：2016-12-15

申请号：US15170148

申请日：2016-06-01

Applicant: CANON KABUSHIKI KAISHA

Inventor： Toshihiro Shoyama ,  Hiroshi Takakusagi ,  Yasuo Yamazaki ,  Hideaki Ishino ,  Toshiyuki Ogawa

IPC: H01L31/0288 ,  H01L31/0392 ,  H01L27/146

Abstract: A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.

Abstract translation: 一种制造成像装置的方法包括：制备包括晶片和布置在晶片上的硅层的衬底，所述晶片包括由氧浓度不小于2×10 16原子/ cm 3的单晶硅制成的第一半导体区域，以及 不大于4×1017原子/ cm3，所述硅层包括氧浓度低于所述第一半导体区域中的氧浓度的单晶硅制成的第二半导体区域; 在含有氧的气氛中对基板退火，将第二半导体区域的氧浓度设定在2×1016原子/ cm3以上且4×1017原子/ cm3以下的范围内; 以及在退火之后在第二半导体区域中形成光电转换元件。

公开(公告)号：US08982254B2

公开(公告)日：2015-03-17

申请号：US13625663

申请日：2012-09-24

Applicant: Canon Kabushiki Kaisha

Inventor： Toshihiro Shoyama

IPC: H04N3/14 ,  H04N5/335 ,  H01L27/146 ,  H01L31/103

CPC classification number: H01L27/14629 ,  H01L27/14627 ,  H01L27/14687 ,  H01L31/103

Abstract: A method of manufacturing a solid-state image sensor having a photoelectric conversion portion includes forming a silicon nitride film by a low-pressure chemical vapor deposition method using hexachlorodisilane (Si2Cl6) as a material gas such that the silicon nitride film covers at least a part of the photoelectric conversion portion.

Abstract translation: 一种制造具有光电转换部的固态图像传感器的方法包括：使用六氯二硅烷（Si 2 Cl 6）作为原料气体，通过低压化学气相沉积法形成氮化硅膜，使得氮化硅膜至少覆盖一部分 的光电转换部。