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公开(公告)号：US11251311B2
公开(公告)日：2022-02-15
申请号：US16075268
申请日：2018-01-23
Applicant: BOE Technology Group Co., Ltd.
Inventor： Guoying Wang , Zhen Song
IPC: H01L29/786 , H01L29/40 , H01L29/66
Abstract: A thin-film transistor, method of manufacturing the same, and a display apparatus are provided. The thin-film transistor includes a first active layer, a source, a drain, a gate, and a second active layer, the source, the drain, the gate are disposed on the first active layer with spacing, the gate is located between the source and the drain, the second active layer is disposed on the gate, the source, and the drain, the source and the drain are both respectively connected to the first active layer and the second active layer, and the gate is respectively insulated from the first active layer, the second active layer, the source, and the drain. When a voltage is applied to the gate, the source and the drain may be conducting via the first and second active layer. Therefore, a larger current may flow between the source and the drain.
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公开(公告)号：US11251249B2
公开(公告)日：2022-02-15
申请号：US16464207
申请日：2018-05-31
Applicant: BOE Technology Group Co., Ltd.
Inventor： Zhen Song , Guoying Wang
Abstract: The present application provides a display panel having a plurality of subpixels. The display panel includes an array substrate including an array of a plurality of first thin film transistors respectively in the plurality of subpixels for driving light emission of the display panel; a counter substrate facing the array substrate and having a plurality of subpixel areas respectively in the plurality of subpixels; and an optical compensation device for adjusting in real time actual light emitting brightness values of the plurality of subpixel areas to target brightness values. The optical compensation device includes a plurality of actual light emitting brightness value detectors integrated in the counter substrate and respectively in the plurality of subpixel areas.
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公开(公告)号：US11211581B2
公开(公告)日：2021-12-28
申请号：US16640047
申请日：2019-09-11
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Guoying Wang , Zhen Song
Abstract: A display panel is provided, the display panel including a back plate, a cover plate, a first spacer, and a second spacer, wherein the back plate has a first surface, the cover plate is disposed opposite the back plate and has a second surface opposite the first surface, the first spacer protrudes from an edge of the first surface and has a closed structure, a first connecting end, and a first free end, the first connecting end connected to the back plate, and the first free end extending away from the back plate, the second spacer protrudes from an edge of the second surface and has a closed structure, a second connecting end, and a second free end, the second connecting end connected to the cover plate, and the second free end extending away from the cover plate, and the first free end presses against the second free end.
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公开(公告)号：US20210335942A1
公开(公告)日：2021-10-28
申请号：US16330533
申请日：2018-02-09
Applicant: BOE Technology Group Co., Ltd.
Inventor： Guoying Wang , Zhen Song
Abstract: The present application discloses an organic light emitting diode display panel having a plurality of subpixels. The organic light emitting diode display panel includes an array substrate; and a counter substrate facing the array substrate. The counter substrate includes a plurality of organic light emitting diodes. The array substrate includes a first base substrate and a plurality of thin film transistors on the first base substrate for driving light emission of the plurality of organic light emitting diodes in the counter substrate.
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公开(公告)号：US11088283B2
公开(公告)日：2021-08-10
申请号：US16330990
申请日：2018-08-27
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Guoying Wang , Zhen Song , Hongda Sun
IPC: H01L29/786 , H01L29/417 , H01L29/423 , H01L29/66 , H01L29/41
Abstract: The present application provides a thin film transistor, a method of fabricating a thin film transistor and an array substrate. The thin film transistor includes: a gate electrode on a substrate and having first and second side surfaces facing each other; and an active layer between the first side surface and the second side surface of the gate electrode and having a third side surface and a fourth side surface. The third side surface of the active layer and the first side surface of the gate electrode face and are spaced apart from each other, the fourth side surface of the active layer and the second side surface of the gate electrode face and are spaced apart from each other, and at least one portion of the gate electrode is in the same range as at least one portion of the active layer in a height direction.
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Patent Agency Ranking
公开(公告)号：US11088230B2
公开(公告)日：2021-08-10
申请号：US16338125
申请日：2018-07-26
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Zhen Song , Guoying Wang
Abstract: A pixel circuit includes a substrate, and a first thin film transistor and a second transistor which are disposed on the substrate. The first thin film transistor is in a top-gate structure, and the second thin film transistor is in a bottom-gate structure; a first electrode of the first thin film transistor is electrically connected with a gate electrode of the second thin film transistor, and the first electrode of the first thin film transistor and the gate electrode of the second thin film transistor are in a same layer on the substrate. The pixel circuit can have a relatively high switch speed and a relatively large driving current, a manufacturing method is easily realized and a process cost is relatively low.
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公开(公告)号：US11018211B2
公开(公告)日：2021-05-25
申请号：US16395730
申请日：2019-04-26
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Guoying Wang , Zhen Song
Abstract: The embodiment of the present disclosure provides an array substrate, a display panel and a display device. The array substrate comprises a plurality of self-luminous units and photosensitive units disposed on a base substrate, wherein the photosensitive units are located on a side of the self-luminous units proximate to the base substrate, and each of the self-luminous units is correspondingly provided with the photosensitive unit; the self-luminous unit comprises a first electrode, a light-emitting functional layer and a second electrode disposed sequentially in a direction away from the base substrate; the first electrode comprises a light-transmitting region and a reflective region interconnected with each other; the second electrode is a transparent electrode.
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公开(公告)号：US10777627B2
公开(公告)日：2020-09-15
申请号：US16453058
申请日：2019-06-26
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Zhen Song , Guoying Wang
IPC: H01L27/32
Abstract: The present disclosure provides an organic light emitting display substrate and a method for manufacturing the same. The organic light emitting display substrate includes a substrate, and a drive transistor and an organic light emitting diode disposed on the substrate. In a direction away from the substrate, the organic light emitting diode successively includes: a first reflective electrode, an organic light emitting layer, and a second reflective electrode. A drain of the drive transistor is electrically coupled to the first reflective electrode. The organic light emitting display substrate further includes a light guide layer. One side surface of the light guide layer is the light incident surface. The light incident surface is disposed opposite to the light outgoing surface of the organic light emitting diode so that the light emitted from the light outgoing surface enters the light guide layer.
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公开(公告)号：US10707236B2
公开(公告)日：2020-07-07
申请号：US16061078
申请日：2017-10-26
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Zhen Song , Guoying Wang , Fengjuan Liu
IPC: H01L29/04 , H01L27/12 , H01L29/786 , H01L27/32 , H01L21/77 , G02F1/1362
Abstract: An array substrate, a manufacturing method thereof and a display device are provided. The manufacturing method includes: forming a light-shielding pattern layer, a buffer layer, an active layer, a gate insulating layer and a gate electrode on a base substrate, which are away from the base substrate in sequence; depositing an amorphous silicon (a-Si) film on the base substrate in a temperature range of 15-150° C.; forming a first interlayer dielectric (ILD) at least disposed above the active layer by patterning the a-Si film; forming through holes in the first ILD, through which a source contact region and a drain contact region of the active layer are exposed; and forming a source electrode and a drain electrode on the first ILD, which are respectively connected with the source contact region and the drain contact region via the through holes.
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公开(公告)号：US12075664B2
公开(公告)日：2024-08-27
申请号：US16971673
申请日：2019-11-04
Applicant: BOE Technology Group Co., Ltd.
Inventor： Guoying Wang , Yicheng Lin , Ling Wang , Zhen Song , Pan Xu , Xing Zhang , Ying Han , Zhan Gao
IPC: H10K59/13 , H10K59/12 , H10K59/121 , H10K59/124 , H10K59/126 , H10K59/131 , H10K59/38
CPC classification number: H10K59/13 , H10K59/1213 , H10K59/124 , H10K59/126 , H10K59/131 , H10K59/38 , H10K59/1201
Abstract: A display substrate having a plurality of subpixels is provided. A respective one of the plurality of subpixels includes a light emitting element; a first thin film transistor configured to driving light emission of the light emitting element; and a light emitting brightness value detector. The light emitting brightness value detector includes a second thin film transistor; and a photosensor electrically connected to the second thin film transistor and configured to detect a light emitting brightness value. The display substrate further includes a silicon organic glass layer on a side of at least one of the first thin film transistor or the second thin film transistor away from a base substrate; and the photosensor is on a side of the silicon organic glass layer away from the base substrate.
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