Abstract:
The present disclosure provides a method for manufacturing an oxide thin film transistor (TFT) array substrate. Specifically the step of forming the thin film transistors may include: forming a pattern of an oxide semiconductor layer on the substrate with photoresist is reserved on the channel regions in the pattern of the oxide semiconductor layer; and forming a source-drain metal layer on the pattern of the oxide semiconductor layer, forming patterns that include source electrodes and drain electrodes by an etching process, and removing the photoresist reserved on the channel regions in the pattern of the oxide semiconductor layer.
Abstract:
A TFT-LCD assembly substrate comprises an array structure layer, comprising a plurality of first signal lines and a plurality of second signal lines. Adjacent first signal lines and adjacent second signal lines cross each other to define a plurality of combination pixel regions, and each of the combination pixel regions comprises two pixel regions juxtaposed along a direction of the first signal line, and there are a thin film transistor and a pixel electrode formed in one pixel region of the two pixel regions and there is a common electrode formed in the other pixel region.
Abstract:
Embodiments of the present application provide an array substrate and a method for fabricating the same. The array substrate comprises: a base substrate, a plurality of thin film transistors formed on the base substrate; the array substrate also comprising: a buffer layer formed on the substrate between the substrate and the film transistors; wherein, the buffer layer is a metal oxide film layer. Embodiments of the present application also provide a display device having such array substrate.