METHOD FOR MANUFACTURING OXIDE THIN FILM TRANSISTOR (TFT) ARRAY SUBSTRATE
    21.
    发明申请
    METHOD FOR MANUFACTURING OXIDE THIN FILM TRANSISTOR (TFT) ARRAY SUBSTRATE 有权
    制造氧化物薄膜晶体管(TFT)阵列基板的方法

    公开(公告)号:US20150348996A1

    公开(公告)日:2015-12-03

    申请号:US14435110

    申请日:2014-08-29

    Abstract: The present disclosure provides a method for manufacturing an oxide thin film transistor (TFT) array substrate. Specifically the step of forming the thin film transistors may include: forming a pattern of an oxide semiconductor layer on the substrate with photoresist is reserved on the channel regions in the pattern of the oxide semiconductor layer; and forming a source-drain metal layer on the pattern of the oxide semiconductor layer, forming patterns that include source electrodes and drain electrodes by an etching process, and removing the photoresist reserved on the channel regions in the pattern of the oxide semiconductor layer.

    Abstract translation: 本发明提供一种制造氧化物薄膜晶体管(TFT)阵列基板的方法。 具体地,形成薄膜晶体管的步骤可以包括:在氧化物半导体层的图案的沟道区域上保留用光致抗蚀剂在衬底上形成氧化物半导体层的图案; 并且在氧化物半导体层的图案上形成源极 - 漏极金属层,通过蚀刻工艺形成包括源电极和漏电极的图案,并且去除在氧化物半导体层的图案中保留在沟道区上的光致抗蚀剂。

    ARRAY SUBSTRATE, METHOD FOR FABRICATING THE SAME, AND DISPLAY DEVICE
    23.
    发明申请
    ARRAY SUBSTRATE, METHOD FOR FABRICATING THE SAME, AND DISPLAY DEVICE 有权
    阵列基板,其制造方法和显示装置

    公开(公告)号:US20140131715A1

    公开(公告)日:2014-05-15

    申请号:US14079134

    申请日:2013-11-13

    Inventor: Xiang LIU Gang WANG

    Abstract: Embodiments of the present application provide an array substrate and a method for fabricating the same. The array substrate comprises: a base substrate, a plurality of thin film transistors formed on the base substrate; the array substrate also comprising: a buffer layer formed on the substrate between the substrate and the film transistors; wherein, the buffer layer is a metal oxide film layer. Embodiments of the present application also provide a display device having such array substrate.

    Abstract translation: 本申请的实施例提供阵列基板及其制造方法。 阵列基板包括:基底基板,形成在基底基板上的多个薄膜晶体管; 所述阵列基板还包括:形成在所述基板上的所述基板和所述薄膜晶体管之间的缓冲层; 其中,缓冲层是金属氧化物膜层。 本申请的实施例还提供了具有这种阵列基板的显示装置。

Patent Agency Ranking