公开(公告)号：US11152436B2

公开(公告)日：2021-10-19

申请号：US16082049

申请日：2018-02-12

Applicant: BEIJING BOE DISPLAY TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Shuai Liu ,  Yun Qiu ,  Hebin Zhao ,  Lianjie Qu ,  Yonglian Qi ,  Weiwei Tong ,  Guangdong Shi ,  Bin Yan ,  Tao Liu

IPC: H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56

Abstract: A display panel, fabrication method thereof, and a display device. The display panel includes a substrate and a plurality of pixels disposed on the substrate; each pixel includes a pixel circuit disposed on the substrate; the display panel further includes a pixel defining layer covering the pixel circuit; a surface of the pixel defining layer facing away from the pixel circuit is provided with a plurality of grooves; the plurality of grooves are in one-to-one correspondence with the plurality of pixels; each of the grooves is provided with a light emitting diode electrically connected to the pixel circuit.

公开(公告)号：US11069275B2

公开(公告)日：2021-07-20

申请号：US16655352

申请日：2019-10-17

Applicant: Hefei Xinsheng Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Kangxi Chen ,  Shuai Liu ,  Xianfeng Yuan ,  Min Wang ,  Yuanyuan Liu ,  Zejun Chen

IPC: G09G3/20

Abstract: Provided are a timing controller, and a driving method and a display device thereof. The timing controller may include a detection circuit and a control circuit. The detection circuit may detect a symbol error rate of a drive signal transmitted from a control circuit to a source drive circuit, and send the symbol error rate to the control circuit. The control circuit may automatically adjust a voltage swing of the drive signal according to the symbol error rate of the drive signal, and may enable a magnitude of the adjusted voltage swing to negatively correlate with a magnitude of the symbol error rate. Therefore, electromagnetic interference is effectively reduced, and flexibility in reducing electromagnetic interference is improved.

公开(公告)号：US10406854B2

公开(公告)日：2019-09-10

申请号：US15537920

申请日：2016-09-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ying Zhang ,  Yifei Zhang ,  Kai Zhao ,  Yu Gu ,  Hongli Ding ,  Shuai Liu

IPC: B60B19/00 ,  B60B19/12

Abstract: An omni wheel, a motion device and a control method thereof are disclosed. The omni wheel includes a center wheel and a plurality of peripheral wheels distributed in a circle with respect to an axis of the center wheel; and a peripheral wheel brake component disposed on the centre wheel and configured to control a resistance of the peripheral wheels during a rotation of the peripheral wheels. The omni wheel solves the problem of low braking performance of the motion device by increasing the resistance of the peripheral wheels during rotation, and avoids any random rotation of the peripheral wheels.

公开(公告)号：US20180308970A1

公开(公告)日：2018-10-25

申请号：US15579051

申请日：2017-05-23

Applicant: BOE Technology Group Co., Ltd. ,  Beijing BOE Display Technology Co., Ltd.

Inventor： Lianjie Qu ,  Guangdong Shi ,  Shuai Liu ,  Minqi Chen ,  Tao Liu

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/423

CPC classification number: H01L29/786 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/66742

Abstract: This disclosure relates to a field-effect transistor and a production method thereof, an array substrate and a production method thereof, and a display panel. The production method comprises: forming an active layer on a substrate; forming a gate electrode insulating layer on the active layer to define a gate electrode area as well as a source electrode area and a drain electrode area located on two sides of the gate electrode area on the active layer; applying a gate electrode layer to cover surfaces of the active layer and the gate electrode insulating layer; patterning the gate electrode layer to form a first contact electrode, a second contact electrode, and a gate electrode, wherein the first contact electrode is located on the source electrode area, the second contact electrode is located on the drain electrode area, and the gate electrode is located on the gate electrode insulating layer.