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公开(公告)号：US20230296880A1
公开(公告)日：2023-09-21
申请号：US18123085
申请日：2023-03-17
Applicant: Applied Materials, Inc.
Inventor： Yongan XU , Jin XU , William WILKINSON , Ludovic GODET
IPC: G02B27/00
CPC classification number: G02B27/0012
Abstract: Methods of forming a resist model for angled gratings on optical devices. In one example, a method includes designing a model with a model area and a verification area with initial mask patterns having a first grating pattern with a first angle and a first critical dimension and fabricating test masks with the model area having a first model angle and a first model critical dimension and the verification area having a first verification angle and a first verification critical dimension. The method also includes patterning a substrate with the test masks, measuring the first model angle, the first model critical dimension, the first verification angle and the first verification critical dimension, and fabricating a new device mask if the first verification angle is within the threshold range of the first desired angle and the first verification critical dimension is within the threshold range of the first desired critical dimension.
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公开(公告)号：US20230194982A1
公开(公告)日：2023-06-22
申请号：US18091525
申请日：2022-12-30
Applicant: Applied Materials, Inc.
Inventor： Yingdong LUO , Yongan XU , Kang LUO , Ludovic GODET
IPC: G03F7/00
CPC classification number: G03F7/0015 , G03F7/0002
Abstract: Embodiments described herein provide method a method of forming optical devices using nanoimprint lithography that maintains the critical dimension of the optical device structures. The method described herein accounts for lateral shrinkage of the solvent based resist during the cure process to maintain the critical dimension. The method includes disposing a stamp coating on a stamp having an inverse optical device pattern of inverse structures. The coating is disposed on sidewalls, inverse structure bottom, and inverse structure top of the inverse structures. The method includes etching the inverse structures such that the stamp coating remains on the sidewalls and is removed from the inverse structure top and bottom. The method further includes imprinting the stamp into an optical device material disposed and subjecting the imprintable optical device material to a cure process which transfers the optical device critical dimension to the optical device structures of the optical device pattern.
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公开(公告)号：US20220392053A1
公开(公告)日：2022-12-08
申请号：US17753555
申请日：2020-09-14
Applicant: Applied Materials, Inc.
Inventor： Yongan XU , Chan Juan XING , Jinxin FU , Yifei WANG , Wayne MCMILLAN , Ludovic GODET
Abstract: Embodiments of the present disclosure include a die system and a method of comparing alignment vectors. The die system includes a plurality of dies arranged in a desired pattern. An alignment vector, such as a die vector, can be determined from edge features of the die. The alignment vectors can be compared to other dies or die patterns in the same system. A method of comparing dies and die patterns includes comparing die vectors and/or pattern vectors. The comparison between alignment vectors allows for fixing the die patterns for the next round of processing. The methods provided allow accurate comparisons between as-deposited edge features, such that accurate stitching of dies can be achieved.
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公开(公告)号：US20220357668A1
公开(公告)日：2022-11-10
申请号：US17661927
申请日：2022-05-04
Applicant: Applied Materials, Inc.
Inventor： Ludovic GODET , Hao TANG , Nai-Wen PI , Yongan XU
IPC: G03F7/20
Abstract: An image projection system is provided. The system can be used for performing lithography. The system includes a deuterium light source, a converging lens coupled to the deuterium light source. The system includes an aperture configured to provide image tiling disposed adjacent to the converging lens. The system includes a movable stage disposed adjacent to the aperture. A method of fabricating an optical device is provided. The method includes depositing a resist over a substrate and determining an exposure pattern for the optical device. The method includes exposing a portion of the resist with a light beam based on the determined exposure pattern. Exposing the portion of the resist includes directing the light beam from a deuterium light source to the substrate and developing the resist.
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Patent Agency Ranking
公开(公告)号：US20210395139A1
公开(公告)日：2021-12-23
申请号：US17466803
申请日：2021-09-03
Applicant: Applied Materials, Inc.
Inventor： Yongan XU , Chien-An CHEN , Ludovic GODET
Abstract: Aspects of the present disclosure relate generally to methods and apparatus of processing transparent substrates, such as glass substrates. In one implementation, a film stack for optical devices includes a glass substrate including a first surface and a second surface. The film stack includes a device function layer formed on the first surface, a hard mask layer formed on the device function layer, and a substrate recognition layer formed on the hard mask layer. The hard mask layer includes one or more of chromium, ruthenium, or titanium nitride. The film stack includes a backside layer formed on the second surface. The backside layer formed on the second surface includes one or more of a conductive layer or an oxide layer.
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公开(公告)号：US20210269355A1
公开(公告)日：2021-09-02
申请号：US16803956
申请日：2020-02-27
Applicant: Applied Materials, Inc.
Inventor： Yongan XU , Chien-An CHEN , Ludovic GODET
Abstract: Aspects of the present disclosure relate generally to methods and apparatus of processing transparent substrates, such as glass substrates. In one implementation, a film stack for optical devices includes a glass substrate including a first surface and a second surface. The film stack includes a device function layer formed on the first surface, a hard mask layer formed on the device function layer, and a substrate recognition layer formed on the hard mask layer. The hard mask layer includes one or more of chromium, ruthenium, or titanium nitride. The film stack includes a backside layer formed on the second surface. The backside layer formed on the second surface includes one or more of a conductive layer or an oxide layer.
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公开(公告)号：US20210263410A1
公开(公告)日：2021-08-26
申请号：US16798261
申请日：2020-02-21
Applicant: Applied Materials, Inc.
Inventor： Yongan XU , Ludovic GODET
Abstract: In one embodiment, a method of fabricating a device having at least two features of differing heights comprises: depositing a resist over a substrate; determining a topography pattern for the at least two features of the device; determining an exposure pattern for the at least two features of the device; exposing a first area of the resist with a first dose of light, the first area corresponding to a first feature of the at least two features; exposing a second area of the resist with a second dose of light that is different from the first dose of light, the second area corresponding to a second feature of the at least two features; and developing the resist.
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公开(公告)号：US20210208317A1
公开(公告)日：2021-07-08
申请号：US16735603
申请日：2020-01-06
Applicant: Applied Materials, Inc.
Inventor： Yongan XU , Rutger MEYER TIMMERMAN THIJSSEN , Jinrui GUO , Ludovic GODET
Abstract: A method of forming patterned features on a substrate is provided. The method includes positioning a plurality of masks arranged in a mask layout over a substrate. The substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas configured to be patterned by energy directed through the masks arranged in the mask layout. The method further includes directing energy towards the plurality of areas through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features in each of the plurality of areas.
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公开(公告)号：US20210195695A1
公开(公告)日：2021-06-24
申请号：US17119377
申请日：2020-12-11
Applicant: Applied Materials, Inc.
Inventor： Hiram CERVERA , Yongan XU , Ludovic GODET
Abstract: Embodiments of the present disclosure relate to bake apparatuses for handling and uniform baking of substrates and methods for the handling and the uniform baking of substrates. The bake apparatuses allow the substrates to be heated to a temperature greater than 50° C. without bowing of about 1 mm to about 2 mm from the edge of the substrates to the center of the substrates. The bake apparatuses heat the substrates uniformly or substantially uniformly to improve substrate quality.
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