公开(公告)号：US20180345330A1

公开(公告)日：2018-12-06

申请号：US16007876

申请日：2018-06-13

Applicant: Applied Materials, Inc.

Inventor： Yujia ZHAI ,  Lai ZHAO ,  Xiangxin RUI ,  Dong-Kil YIM ,  Tae Kyung WON ,  Soo Young CHOI

IPC: B08B7/00 ,  H01J37/32 ,  B08B9/00 ,  C23C16/44

Abstract: In one implementation, a method for cleaning a processing chamber is provided. The method comprises introducing a reactive species into a processing chamber having a residual high-k dielectric material formed on one or more interior surfaces of the processing chamber. The reactive species is formed from a halogen-containing gas mixture and the one or more interior surfaces include at least one surface having a coating material formed thereon. The method further comprises reacting the residual high-k dielectric material with the reactive species to form a volatile product. The method further comprises removing the volatile product from the processing chamber. The removal rate of the residual high-k dielectric material is greater than a removal rate of the coating material. The high-k dielectric material is selected from zirconium dioxide (ZrO2) and hafnium dioxide (HfO2). The coating material includes a compound selected from alumina (Al2O3), yttrium-containing compounds, and combinations thereof.

公开(公告)号：US20180114945A1

公开(公告)日：2018-04-26

申请号：US15843291

申请日：2017-12-15

Applicant: Applied Materials, Inc.

Inventor： Jrjyan Jerry CHEN ,  Xiangxin RUI ,  Soo Young CHOI

IPC: H01L51/52 ,  H01L21/67 ,  H01L21/687 ,  H01L21/677

CPC classification number: H01L51/5256 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67742 ,  H01L21/68742 ,  H01L21/68785 ,  H01L21/68792

Abstract: Embodiments described herein generally relate to a method and apparatus for encapsulating an OLED structure, more particularly, to a TFE structure for an OLED structure. The TFE structure includes at least one dielectric layer and at least two barrier layers, and the TFE structure is formed over the OLED structure. The at least one dielectric layer is deposited by atomic layer deposition (ALD). Having the at least one dielectric layer formed by ALD in the TFE structure improves the barrier performance of the TFE structure.

公开(公告)号：US20160336542A1

公开(公告)日：2016-11-17

申请号：US15149785

申请日：2016-05-09

Applicant: Applied Materials, Inc.

Inventor： Jrjyan Jerry CHEN ,  Xiangxin RUI ,  Soo Young CHOI

IPC: H01L51/52 ,  H01L21/67 ,  H01L51/56

CPC classification number: H01L51/5256 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67742 ,  H01L21/68742 ,  H01L21/68785 ,  H01L21/68792

Abstract: Embodiments described herein generally relate to a method and apparatus for encapsulating an OLED structure, more particularly, to a TFE structure for an OLED structure. The TFE structure includes at least one dielectric layer and at least two barrier layers, and the TFE structure is formed over the OLED structure. The at least one dielectric layer is deposited by atomic layer deposition (ALD). Having the at least one dielectric layer formed by ALD in the TFE structure improves the barrier performance of the TFE structure.

Abstract translation: 本文描述的实施例通常涉及用于封装OLED结构的方法和装置，更具体地涉及用于OLED结构的TFE结构。 TFE结构包括至少一个电介质层和至少两个阻挡层，并且TFE结构形成在OLED结构上。 通过原子层沉积（ALD）沉积至少一个介电层。 在TFE结构中具有由ALD形成的至少一个电介质层改善了TFE结构的阻挡性能。