公开(公告)号：US20200350146A1

公开(公告)日：2020-11-05

申请号：US16927618

申请日：2020-07-13

Applicant: Applied Materials, Inc.

Inventor： Bhaskar KUMAR ,  Anup Kumar SINGH ,  Vivek Bharat SHAH ,  Sidharth BHATIA ,  Ganesh BALASUBRAMANIAN

IPC: H01J37/32

Abstract: A method and apparatus for operating a plasma processing chamber includes performing a plasma process at a process pressure and a pressure power to generate a plasma. A first ramping-down stage starts in which the process power and the process pressure are ramped down substantially simultaneously to an intermediate power level and an intermediate pressure level, respectively. The intermediate power level and intermediate pressure level are preselected so as to raise a plasma sheath boundary above a threshold height from a surface of a substrate. A purge gas is flowed from a showerhead assembly at a sufficiently high rate to sweep away contaminant particles trapped in the plasma such that one or more contaminant particles move outwardly of an edge of the substrate. A second ramping-down stage starts where the intermediate power level and the intermediate pressure level decline to a zero level and a base pressure, respectively.

公开(公告)号：US20160379819A1

公开(公告)日：2016-12-29

申请号：US14750778

申请日：2015-06-25

Applicant: Applied Materials, Inc.

Inventor： He REN ,  Mehul B. NAIK ,  Deenesh PADHI ,  Priyanka DASH ,  Bhaskar KUMAR ,  Alexandros T. DEMOS

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  C23C16/045 ,  C23C16/36 ,  C23C16/482 ,  C23C16/56 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method for sealing porous low-k dielectric films is provided. The method comprises exposing a substrate to UV radiation and a first reactive gas, wherein the substrate has an open feature defined therein, the open feature defined by a porous low-k dielectric layer and a conductive material, wherein the porous low-k dielectric layer is a silicon and carbon containing material and selectively forming a pore sealing layer in the open feature on exposed surfaces of the porous low-k dielectric layer using UV assisted photochemical vapor deposition.

Abstract translation: 提供了一种用于密封多孔低k电介质膜的方法。 该方法包括将衬底暴露于UV辐射和第一反应气体，其中衬底具有限定在其中的开放特征，由多孔低k电介质层和导电材料限定的开放特征，其中多孔低k电介质层 是含硅和碳的材料，并使用UV辅助光化学气相沉积在多孔低k电介质层的暴露表面上的开放特征中选择性地形成孔密封层。

公开(公告)号：US20140264297A1

公开(公告)日：2014-09-18

申请号：US14203426

申请日：2014-03-10

Applicant: Applied Materials, Inc.

Inventor： Bhaskar KUMAR ,  Dieter HAAS

IPC: H01L51/52

CPC classification number: H01L51/5253

Abstract: A method and apparatus for depositing a multilayer barrier structure is disclosed herein. In one embodiment, a thin barrier layer formed over an organic semiconductor includes a non-conformal organic layer, an inorganic layer formed over the non-conformal organic layer, a metallic layer formed over the inorganic layer and a second organic layer formed over the metallic layer. In another embodiment, a method of depositing a barrier layer includes forming an organic semiconductor device over the exposed surface of a substrate, depositing an inorganic layer using CVD, depositing a metallic layer comprising one or more metal oxide or metal nitride layers over the inorganic layer by ALD, each of the metal oxide or metal nitride layers comprising a metal, wherein the metal is selected from the group consisting of aluminum, hafnium, titanium, zirconium, silicon or combinations thereof and depositing an organic layer over the metallic layer.

Abstract translation: 本文公开了一种用于沉积多层阻挡结构的方法和装置。 在一个实施例中，形成在有机半导体上的薄势垒层包括非共形有机层，在非保形有机层上形成的无机层，形成在无机层上的金属层和形成在金属上的第二有机层 层。 在另一个实施例中，沉积阻挡层的方法包括在衬底的暴露表面上形成有机半导体器件，使用CVD沉积无机层，在无机层上沉积包含一个或多个金属氧化物或金属氮化物层的金属层 通过ALD，每个金属氧化物或金属氮化物层包含金属，其中金属选自铝，铪，钛，锆，硅或其组合，并在金属层上沉积有机层。