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    Formation of carbon and semiconductor nanomaterials using molecular assemblies
    21.
    发明授权
    Formation of carbon and semiconductor nanomaterials using molecular assemblies 有权
    使用分子组装形成碳和半导体纳米材料

    公开(公告)号：US08138492B2

    公开(公告)日：2012-03-20

    申请号：US12973063

    申请日：2010-12-20

    Applicant: Ali Afzali-Ardakani ,  Cherie R. Kagan ,  Laura L. Kosbar

    Inventor： Ali Afzali-Ardakani ,  Cherie R. Kagan ,  Laura L. Kosbar

    IPC: H01L29/06 ,  H01L21/28

    CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C30B25/00 ,  C30B29/02 ,  C30B29/60 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/78681 ,  H01L29/78684 ,  Y10S977/762 ,  Y10S977/84 ,  Y10S977/89 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/938

    Abstract: The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attachment to the substrate and a binding group for attachment of metal-containing species. The metal-containing species is selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor. The metallized molecular precursor is then subjected to a heat treatment to provide a catalytic site from which the carbon nanomaterials or semiconductor nanomaterials form. The heating of the metallized molecular precursor is conducted under conditions suitable for chemical vapor deposition of the carbon nanomaterials or semiconductor nanomaterials.

    Abstract translation: 本发明涉及形成碳纳米材料或半导体纳米材料的方法。 该方法包括提供基底并将分子前体附着到基底上。 分子前体包括用于连接到底物的表面结合基团和用于附着含金属的物质的结合基团。 含金属的物质选自金属阳离子，金属化合物或金属或金属氧化物纳米颗粒，以形成金属化的分子前体。 然后对金属化分子前体进行热处理以提供形成碳纳米材料或半导体纳米材料的催化部位。 金属化分子前体的加热在适于碳纳米材料或半导体纳米材料的化学气相沉积的条件下进行。

    Formation of carbon and semiconductor nanomaterials using molecular assemblies
    26.
    发明授权
    Formation of carbon and semiconductor nanomaterials using molecular assemblies 有权
    使用分子组装形成碳和半导体纳米材料

    公开(公告)号：US07855133B2

    公开(公告)日：2010-12-21

    申请号：US12199516

    申请日：2008-08-27

    Applicant: Ali Afzali-Ardakani ,  Cherie R. Kagan ,  Laura L. Kosbar

    Inventor： Ali Afzali-Ardakani ,  Cherie R. Kagan ,  Laura L. Kosbar

    IPC: H01L21/4763 ,  H01L21/8232 ,  H01L21/336 ,  H01L21/28

    CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C30B25/00 ,  C30B29/02 ,  C30B29/60 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/78681 ,  H01L29/78684 ,  Y10S977/762 ,  Y10S977/84 ,  Y10S977/89 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/938

    Abstract: The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attachment to the substrate and a binding group for attachment of metal-containing species. The metal-containing species is selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor. The metallized molecular precursor is then subjected to a heat treatment to provide a catalytic site from which the carbon nanomaterials or semiconductor nanomaterials form. The heating of the metallized molecular precursor is conducted under conditions suitable for chemical vapor deposition of the carbon nanomaterials or semiconductor nanomaterials.

    Abstract translation: 本发明涉及形成碳纳米材料或半导体纳米材料的方法。 该方法包括提供基底并将分子前体附着到基底上。 分子前体包括用于连接到底物的表面结合基团和用于附着含金属的物质的结合基团。 含金属的物质选自金属阳离子，金属化合物或金属或金属氧化物纳米颗粒，以形成金属化的分子前体。 然后对金属化分子前体进行热处理以提供形成碳纳米材料或半导体纳米材料的催化部位。 金属化分子前体的加热在适于碳纳米材料或半导体纳米材料的化学气相沉积的条件下进行。

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