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公开(公告)号：US20210072652A1
公开(公告)日：2021-03-11
申请号：US17044674
申请日：2019-03-13
Applicant: ASML Netherlands B.V.
Inventor： Simon Reinald HUISMAN , Marinus Petrus REIJNDERS
Abstract: The invention provides a level sensor to measure a position of a surface of a substrate, comprising a projection unit arranged to direct a beam of radiation to the surface of the substrate and a detection unit. The detection unit comprises a detection grating arranged to receive the beam of radiation reflected on the surface of the substrate, one or more detectors, one or more optical elements to direct the beam of radiation from the detection grating to the one or more detectors, and a processing unit to determine the position of the surface of the substrate on the basis of the beam of radiation received by the one or more detectors. The detection grating and the one or more optical elements are integrated in a single integrated optical element.
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公开(公告)号：US20190049866A1
公开(公告)日：2019-02-14
申请号：US16069678
申请日：2017-01-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Simon Reinald HUISMAN , Alessandro POLO , Duygu AKBULUT , Sebastianus Adrianus GOORDEN , Arie Jeffrey DEN BOEF
Abstract: In an alignment sensor of a lithographic apparatus, position sensing radiation is delivered to a target (P1). After reflection or diffraction from the target, position sensing radiation is processed to determine a position of the target. Reference radiation interferes with the position sensing radiation) while a relative phase modulation is applied between the reference radiation and the position sensing radiation. The interfering radiation includes a time-varying component defined by the applied phase modulation. The interfering radiation is delivered to two photodetectors in such a way that each photodetector receives said time-varying component in anti-phase to that received at the other photodetector. A difference signal (i(t)) from said photodetectors contains an amplified, low noise version of said time-varying component. This is used in determining the position of the target. Mode matching enhances interference. Surface scattered radiation is rejected.
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公开(公告)号：US20250147429A1
公开(公告)日：2025-05-08
申请号：US18693337
申请日：2022-09-23
Applicant: ASML NETHERLANDS B.V.
Abstract: A method for determining a measurement setting for measuring a parameter of interest from a target structure on a substrate. The method includes: obtaining first position difference data describing a difference between a position of a first representative target structure position and a position of one or more first features relating to product structure; obtaining optical metrology data relating to optical measurements of the target structure and further relating to a plurality of different measurement settings; and determining the measurement setting from the first position difference data and the optical metrology data such that a measured feature position value obtained from an optical measurement of the target structure using the determined measurement setting is better correlated to a position of the one or more first features.
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公开(公告)号：US20210271178A1
公开(公告)日：2021-09-02
申请号：US17256408
申请日：2019-06-13
Applicant: ASML Netherlands B.V.
Inventor： Simon Reinald HUISMAN , Alessandro POLO
Abstract: A sensor apparatus (300) for determining a position of a target (330) of a substrate (W) comprising, projection optics (315;321) configured to project a radiation beam (310) onto the substrate, collection optics (321) configured to collect measurement radiation (325) that has scattered from the target, a wavefront sensing system (335) configured to determine a pupil function variation of at least a portion (355) of the measurement radiation and output a signal (340) indicative thereof, and a measurement system (350) configured to receive the signal and to determine the position of the target in at least partial dependence on the collected measurement radiation and the determined pupil function variation of at least a portion of the measurement radiation.
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公开(公告)号：US20210240091A1
公开(公告)日：2021-08-05
申请号：US17049597
申请日：2019-04-02
Applicant: ASML Netherlands B.V.
Inventor： Sebastianus Adrianus GOORDEN , Simon Reinald HUISMAN
IPC: G03F9/00
Abstract: A method of determining a position of a feature (for example an alignment mark) on an object (for example a silicon wafer) is disclosed. The method comprises determining an offset parameter, determining the second position; and determining a first position from the second position and the offset parameter, the position of the mark being the first position. The offset parameter is a measure of a difference in: a first position that is indicative of the position of the feature; and a second position that is indicative of the position of the feature. The offset parameter may be determined using a first measurement apparatus and the second position may be determined using a second, different measurement apparatus.
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Patent Agency Ranking
公开(公告)号：US20190354026A1
公开(公告)日：2019-11-21
申请号：US16478068
申请日：2018-01-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Stefan Michiel WITTE , Alessandro ANTONCECCHI , Stephen EDWARD , Hao ZHANG , Paulus Clemens Maria PLANKEN , Kjeld Sijbrand Eduard EIKEMA , Sebastianus Adrianus GOORDEN , Simon Reinald HUISMAN , Irwan Dani SETIJA
Abstract: As increasing numbers of layers, using increasing numbers of specific materials, are deposited on substrates, it becomes increasingly difficult to detect alignment marks accurately for, for example, applying a desired pattern onto a substrate using a lithographic apparatus, in part due to one or more of the materials used in one or more of the layers being wholly or partially opaque to the radiation used to detect alignment marks. In a first step, the substrate is illuminated with excitation radiation. In a second step, at least one effect associated with a reflected material effect scattered by a buried structure is measured. The effect may, for example, include a physical displacement of the surface of the substrate. In a third step, at least one characteristic of the structure based on the measured effect is derived.
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公开(公告)号：US20180149987A1
公开(公告)日：2018-05-31
申请号：US15575069
申请日：2016-03-14
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus MATHIJSSEN , Arie Jeffrey DEN BOEF , Alessandro POLO , Patricius Aloysius Jacobus TINNEMANS , Adrianus Johannes Hendrikus SCHELLEKENS , Elahe YEGANEGI DASTGERDI , Willem Marie Julia Marcel COENE , Erik Willem BOGAART , Simon Reinald HUISMAN
Abstract: An alignment system, method and lithographic apparatus are provided for determining the position of an alignment mark, the alignment system comprising a first system configured to produce two overlapping images of the alignment mark that are rotated by around 180 degrees with respect to one another, and a second system configured to determine the position of the alignment mark from a spatial distribution of an intensity of the two overlapping images.
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公开(公告)号：US20250060684A1
公开(公告)日：2025-02-20
申请号：US18724286
申请日：2022-12-14
Applicant: ASML Netherlands B.V.
Inventor： Simon Reinald HUISMAN , Sebastianus Adrianus GOORDEN , Stephen ROUX
IPC: G03F9/00
Abstract: A system includes optical devices, reflective devices, a movable reflective device, and a detector. The optical devices are disposed at a first plane and around a axis of the system and receive scattered radiation from targets. The reflective devices are disposed at at least a second plane and around the axis. Each of the reflective devices receives the scattered radiation from a corresponding one of the optical devices. The movable reflective device is disposed along the axis and receives the scattered radiation from each of the reflective devices. The detector receives the scattered radiation from the movable reflective device.
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公开(公告)号：US20250036031A1
公开(公告)日：2025-01-30
申请号：US18716007
申请日：2022-11-17
Applicant: ASML Netherlands B.V.
Inventor： Aniruddha Ramakrishna SONDE , Mahesh Upendra AJGAONKAR , Krishanu SHOME , Simon Reinald HUISMAN , Sebastianus Adrianus GOORDEN , Franciscus Godefridus Casper BIJNEN , Patrick WARNAAR , Sergei SOKOLOV
Abstract: Some embodiments of this disclosure can improve measurement of target mark asymmetry in metrology apparatuses for improving accuracy in measurements performed in conjunction with lithographic processes. For example, a metrology system can include a projection system configured to receive a plurality of diffraction orders diffracted from a target on a substrate. The metrology system can further include a detector array and a waveguide device configured to transmit the plurality of diffraction orders between the projection system and the detector array. The detector array can be configured to detect each of the plurality of diffraction orders spatially separate from other ones of the plurality of diffraction orders.
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公开(公告)号：US20240353761A1
公开(公告)日：2024-10-24
申请号：US18686742
申请日：2022-08-05
Applicant: ASML Netherlands B.V.
CPC classification number: G03F7/70633 , G03F7/70408 , G03F9/7092
Abstract: Systems, apparatuses, and methods are provided for correcting an alignment measurement or overlay error. An example method can include measuring an observable in response to an illumination of a region of a surface by a radiation beam, such as interference between radiation diffracted from the region. The example method can further include generating a measurement signal indicative of the observable. In some aspects, the measurement signal can include interference fringe pattern data indicative of the measured interference. The example method can further include determining a correction to a measurement value based on measurement signal. Optionally, the correction can include a correction to an alignment measurement of an alignment sensor, a correction to an overlay error of an overlay sensor, or both.
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