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    Cylindrical shaped arc chamber for indirectly heated cathode ion source
    22.
    发明授权
    Cylindrical shaped arc chamber for indirectly heated cathode ion source 有权

    公开(公告)号：US10818469B2

    公开(公告)日：2020-10-27

    申请号：US16219302

    申请日：2018-12-13

    Applicant: APPLIED Materials, Inc.

    Inventor： Alexander S. Perel ,  Jay T. Scheuer ,  Graham Wright

    IPC: H01J37/08 ,  H01J37/06

    Abstract: An indirectly heated cathode ion source having a cylindrical housing with two open ends is disclosed. The cathode and repeller are sized to fit within the two open ends. These components may be inserted into the open ends, creating a small radial spacing that provides electrical isolation between the cylindrical housing and the cathode and repeller. In another embodiment, the repeller may be disposed from the end of the cylindrical housing creating a small axial spacing. In another embodiment, insulators are used to hold the cathode and repeller in place. This design results in a reduced distance between the cathode column and the extraction aperture, which may be beneficial to the generation of ion beams of certain species.

    System and method for introducing aluminum to an ion source
    23.
    发明授权
    System and method for introducing aluminum to an ion source 有权

    公开(公告)号：US11996281B1

    公开(公告)日：2024-05-28

    申请号：US18206910

    申请日：2023-06-07

    Applicant: Applied Materials, Inc.

    Inventor： Graham Wright ,  Ori Noked ,  Craig R. Chaney ,  Adam M. McLaughlin

    IPC: H01J7/02 ,  H01J1/20 ,  H01J7/24

    CPC classification number: H01J7/02 ,  H01J1/20 ,  H01J7/24

    Abstract: An ion source that may be used to introduce a dopant material into the arc chamber is disclosed. A component containing the dopant material is disposed in the path of an etching gas, which also enters the arc chamber. In some embodiments, the dopant material is in liquid form, and the etching gas travels through the liquid. In other embodiments, the dopant material is a solid material. In some embodiments, the solid material is formed as a porous structure, such that the etching gas flows through the solid material. In other embodiments, one or more components of the ion source are manufactured using a material that includes the dopant material, such that the etching gas etches the component to release the dopant material.

    Crucible design for liquid metal in an ion source
    24.
    发明授权
    Crucible design for liquid metal in an ion source 有权

    公开(公告)号：US11854760B2

    公开(公告)日：2023-12-26

    申请号：US17353171

    申请日：2021-06-21

    Applicant: Applied Materials, Inc.

    Inventor： Graham Wright ,  Eric Donald Wilson ,  Daniel Alvarado ,  Robert C. Lindberg ,  Jacob Mullin

    IPC: H01J27/02 ,  H01J27/14

    CPC classification number: H01J27/022 ,  H01J27/14

    Abstract: A crucible that exploits the observation that molten metal tends to flow toward the hottest regions is disclosed. The crucible includes an interior in which dopant material may be disposed. The crucible has a pathway leading from the interior toward an aperture, wherein the temperature is continuously increasing along the pathway. The aperture may be disposed in or near the interior of the arc chamber of an ion source. The liquid metal flows along the pathway toward the arc chamber, where it is vaporized and then ionized. By controlling the flow rate of the pathway, spillage may be reduced. In another embodiment, an inverted crucible is disclosed. The inverted crucible comprises a closed end in communication with the interior of the ion source, so that the closed end is the hottest region of the crucible. An opening is disposed on a different wall to allow vapor to exit the crucible.

    Device To Control Uniformity Of Extraction Ion Beam
    29.
    发明申请
    Device To Control Uniformity Of Extraction Ion Beam 有权

    公开(公告)号：US20230082224A1

    公开(公告)日：2023-03-16

    申请号：US17473101

    申请日：2021-09-13

    Applicant: Applied Materials, Inc.

    Inventor： Jay T. Scheuer ,  Graham Wright ,  Peter F. Kurunczi ,  Alexandre Likhanskii

    IPC: H01J37/08

    Abstract: An ion source capable of extracting a ribbon ion beam with improved uniformity is disclosed. One of the walls of the ion source has a protrusion on its interior surface facing the chamber. The protrusion creates a loss area that serves as a sink for free electrons and ions. This causes a reduction in plasma density near the protrusion, and may improve the uniformity of the ribbon ion beam that is extracted from the ion source by modifying the beam current near the protrusion. The shape of the protrusion may be modified to achieve the desired uniformity. The protrusion may also be utilized with a cylindrical ion source. In certain embodiments, the protrusion is created by a plurality of mechanically adjustable protrusion elements.

    Advanced sputter targets for ion generation
    30.
    发明授权
    Advanced sputter targets for ion generation 有权

    公开(公告)号：US11542594B2

    公开(公告)日：2023-01-03

    申请号：US17235351

    申请日：2021-04-20

    Applicant: APPLIED Materials, Inc.

    Inventor： Graham Wright ,  Klaus Becker

    IPC: C23C14/34 ,  H01J37/34

    Abstract: An advanced sputter target is disclosed. The advanced sputter target comprises two components, a porous carrier, and a metal material disposed within that porous carrier. The porous carrier is designed to be a high porosity, open cell structure such that molten material may flow through the carrier. The porous carrier also provides structural support for the metal material. The cell sizes of the porous carrier are dimensioned such that the capillary action and surface tension prohibits the metal material from spilling, dripping, or otherwise exiting the porous carrier. In some embodiments, the porous carrier is an open cell foam, a weave of strands or stacked meshes.

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