公开(公告)号：US20220028795A1

公开(公告)日：2022-01-27

申请号：US17383361

申请日：2021-07-22

申请人： Applied Materials, Inc.

发明人： Wenjing Xu ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen ,  Zhiyuan Wu

IPC分类号： H01L23/532 ,  H01L23/522 ,  H01L21/768

摘要： Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

公开(公告)号：US20200350204A1

公开(公告)日：2020-11-05

申请号：US16866974

申请日：2020-05-05

申请人： Applied Materials, Inc.

发明人： Sang Ho Yu ,  Lu Chen ,  Seshadri Ganguli

IPC分类号： H01L21/768

摘要： Methods for selectively depositing on non-metallic surfaces are disclosed. Some embodiments of the disclosure utilize an unsaturated hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked non-metallic surfaces. Some embodiments of the disclosure relate to methods of forming metallic vias with decreased resistance.

公开(公告)号：US20200347493A1

公开(公告)日：2020-11-05

申请号：US16701061

申请日：2019-12-02

申请人： Applied Materials, Inc.

发明人： FENG Q. LIU ,  Lu Chen ,  Mark Saly ,  Liqi Wu ,  Feng Chen

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/455

摘要： Methods for selectively depositing on non-metallic surfaces are disclosed. Some embodiments of the disclosure utilize a blocking compound to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked non-metallic surfaces. Some embodiments of the disclosure relate to methods of forming metallic vias with decreased resistance. Some embodiments utilize an unsaturated hydrocarbon as a blocking compound. Some embodiments utilize a triazole as a blocking compound.

公开(公告)号：US09303318B2

公开(公告)日：2016-04-05

申请号：US13649488

申请日：2012-10-11

申请人： Applied Materials, Inc.

发明人： Tuoh-Bin Ng ,  Yuriy Melnik ,  Lily L Pang ,  Eda Tuncel ,  Lu Chen ,  Son T Nguyen

IPC分类号： C23C16/455 ,  C23C16/30 ,  C23C16/448

CPC分类号： C23C16/303 ,  C23C16/4488 ,  C23C16/45574 ,  C23C16/4558 ,  Y10T137/0318 ,  Y10T137/8593

摘要： In one embodiment, an apparatus includes a first gas distribution assembly that includes a first gas passage for introducing a first process gas into a second gas passage that introduces the first process gas into a processing chamber and a second gas distribution assembly that includes a third gas passage for introducing a second process gas into a fourth gas passage that introduces the second process gas into the processing chamber. The first and second gas distribution assemblies are each adapted to be coupled to at least one chamber wall of the processing chamber. The first gas passage is shaped as a first ring positioned within the processing chamber above the second gas passage that is shaped as a second ring positioned within the processing chamber. The gas distribution assemblies may be designed to have complementary characteristic radial film growth rate profiles.

摘要翻译： 在一个实施例中，一种装置包括第一气体分配组件，该第一气体分配组件包括用于将第一工艺气体引入第二气体通道的第一气体通道，该第二气体通道将第一工艺气体引入处理室，以及包括第三气体的第二气体分配组件 用于将第二工艺气体引入到将第二工艺气体引入处理室的第四气体通道中。 第一和第二气体分配组件各自适于联接到处理室的至少一个室壁。 第一气体通道被成形为位于第二气体通道上方的处理室内的第一环，该第一环形成为位于处理室内的第二环。 气体分配组件可以被设计成具有互补的特征径向膜生长速率曲线。