公开(公告)号：US20070272655A1

公开(公告)日：2007-11-29

申请号：US11798883

申请日：2007-05-17

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

IPC分类号： B44C1/22 ,  H01L21/311

CPC分类号： H01L21/32051 ,  C23C16/34 ,  C23C16/452 ,  C23C16/50 ,  H01L21/28556 ,  H01L21/76843

摘要： A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

摘要翻译： 在衬底和金属构件之间的室内的位置处产生Cl 2/2气体等离子体。 用Cl 2 H 2气体等离子体蚀刻金属构件以形成前体。 以与容纳基板的室隔离的方式激发氮气。 在被激发的氮和前体之间反应时形成金属氮化物，并在基板上形成膜。 在金属氮化物成膜后，在基板上的金属氮化物上形成前体的金属成分作为膜。 以这种方式，以高速度产生具有优异的埋藏性能和非常小的厚度的阻挡金属膜，其中金属的扩散被抑制并且对金属的粘附性得到改善。

公开(公告)号：US07262500B2

公开(公告)日：2007-08-28

申请号：US11132223

申请日：2005-05-19

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

IPC分类号： H01L21/44 ,  H01L21/02 ,  H01L23/48

CPC分类号： H01J37/321 ,  C23C16/08 ,  C23C16/14 ,  C23C16/4488 ,  H01J37/32357 ,  H01J2237/3326 ,  H01L21/28556 ,  H01L21/76879

摘要： In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

摘要翻译： 在金属膜制造装置中，在室内用Cl 2 O 2气体等离子体蚀刻铜板构件，以形成包含Cu成分和Cl 2/2气体的前体; 并且将铜板构件和基板的温度和它们的温度之间的差异预先控制，以将前体的Cu组分沉积在基板上，从而形成Cu膜。 在该装置中，Cl *形成在与腔室内部连通的通道的激励室中，以流过Cl 2气体，并且将Cl *供应到室中以抽出Cl < 从吸附在基材上的前驱物中吸收气体，从而促进Cu成膜反应。 该设备具有高的成膜速度，可以使用廉价的起始材料，并且可以最小化残留在膜中的杂质。