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公开(公告)号:US20220102160A1
公开(公告)日:2022-03-31
申请号:US17547238
申请日:2021-12-10
Applicant: Tokyo Electron Limited , UNIVERSITE D'ORLEANS
Inventor: Shigeru TAHARA , Jacques FAGUET , Kaoru MAEKAWA , Kumiko ONO , Nagisa SATO , Remi DUSSART , Thomas TILLOCHER , Philippe LEFAUCHEUX , Gaëlle ANTOUN
IPC: H01L21/311 , H01J37/32
Abstract: An etching method includes: a physical adsorption process of physically adsorbing an adsorbate based on a first processing gas on a film to be etched under a condition that the pressure of the first processing gas is smaller than the saturated vapor pressure of the first processing gas with respect to a temperature of an object to be processed while cooling the object to be processed on which the film to be etched is formed; and an etching process of etching the film to be etched by reacting the adsorbate with the film to be etched by a plasma of a second processing gas.
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公开(公告)号:US20210292350A1
公开(公告)日:2021-09-23
申请号:US16332666
申请日:2017-09-14
Inventor: Luigi AGROFOGLIO , Vincent ROY , Elzbieta PLEBANEK , Maxime BESSIERES
IPC: C07F9/6558 , C07D235/06 , C07D401/04 , A61P31/14
Abstract: The present invention relates to compounds comprising a benzimidazole scaffold, and the use of such compounds for the treatment of viral diseases. The invention also relates to pharmaceutical compositions comprising said compounds as an active ingredient. In particular the compounds of the invention comprising a benzimidazole scaffold are used for the treatment of filoviruses or retroviruses, and preferably for the treatment of Ebola virus or HIV virus.
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公开(公告)号:US20210009581A1
公开(公告)日:2021-01-14
申请号:US16615947
申请日:2018-05-23
Applicant: Centre National de la Recherche Scientifique , Universite d'Orleans , Université de Tours , Institute National de la Santé et de la Recherche Médicale (INSERM) , CHU Nantes
Inventor: Sylvain ROUTIER , Frédéric BURON , Nuno RODRIGUES , Gaëlle FOURRIERE-GRANDCLAUDE , Christophe VANDIER , Aurélie CHANTOME , Marie POTIER-CARTEREAU , Maxime GUEGUINOU , Séverine MARIONNEAU-LAMBOT
IPC: C07D471/04 , C07D495/04 , C07D487/04 , C07D491/048 , C07D513/04 , A61P35/04
Abstract: The present invention concerns a compound of following general formula (I): where: either R is an R1 group and R′ is an -A1-Cy1 group, or R is an -A1-Cy1 group and R′ is an R1 group, R1 particularly being H or (C1-C6)alkyl group; A1 being an —NH— radical or —NH—CH2— radical; Cy1 particularly being a phenyl group, A is a fused (hetero)aromatic ring having 5 to 7 atoms, for use for treating cancer.
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24.
公开(公告)号:US20200313218A1
公开(公告)日:2020-10-01
申请号:US16649796
申请日:2018-09-25
Applicant: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE , UNIVERSITE D'ORLEANS
Inventor: Julien Vulliet , Anne-Lise Thomann , Pierre-Laurent Coddet
IPC: H01M8/1253 , C23C14/58 , C23C14/35 , C23C14/08 , H01M8/126
Abstract: A method of manufacturing by magnetron cathode sputtering an electrolyte film for use in solid oxide cells (SOC). This method comprises the steps consisting of heating a substrate to a temperature ranging from 200° C. to 1200° C.; followed by subjecting the substrate to at least two treatment cycles, each treatment cycle comprising: 1) depositing one layer of a metal precursor on the substrate by magnetron cathode sputtering of a target made up of the metal precursor, the sputtering being carried out under elemental sputtering conditions; followed by 2) oxidation-crystallisation of the metal precursor forming the layer deposited on the substrate in the presence of oxygen to obtain the transformation of the metal precursor into the electrolyte material; and in that the substrate is kept at a temperature ranging from 200° C. to 1200° C. for the entire duration of each treatment cycle.
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公开(公告)号:US20200010866A1
公开(公告)日:2020-01-09
申请号:US16495874
申请日:2018-03-21
Inventor: Lucie PIGEON , Rachid, A. RAHMOUNI , Harivony, Chantal PICHON-RABENANDRASANA , Patrick MIDOUX
IPC: C12P19/34 , C12N15/81 , C07K14/395 , A61K31/7088
Abstract: The application relates to the production of RNA of interest, more specifically of messenger RNA of interest or of long non-coding RNA of interest, by yeasts with recombinant pseudo-viral particles. The recombinant yeasts have been genetically modified in order to produce the RNA of interest in the form of a complex, particularly in the form of recombinant pseudo-viral particles. These recombinant pseudo-viral particles are produced from certain elements of yeast Ty retrotransposon, but do not retrotranscribe the RNA that they contain. Thus, the application relates to the components that are thus capable of being implemented or produced, and particularly to the nucleic acid constructs, kits, bacteria cells, yeast cells, culture or transfection media containing them, as well as to a method for producing a pharmaceutical composition, particularly for medical applications, more specifically for vaccines, anti-tumour and pro-regenerative applications.
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26.
公开(公告)号:US20190330242A1
公开(公告)日:2019-10-31
申请号:US16477080
申请日:2018-01-10
Inventor: Svetlana ELISEEVA , Franck SUZENET , Sylvain ROUTIER , Raja BEN OTHMAN , Alexandra COLLET , Ivana MARTINIC , Régis DELATOUCHE , Stéphane PETOUD
IPC: C07F5/02 , C07C233/05
Abstract: The present invention relates to a complex comprising at least one lanthanide (Ln) and at least one compound (C) comprising a unit of formula (I) below: said unit of formula (I) being covalently connected to at least one antenna which absorbs at a wavelength ranging from 500 nm to 900 nm.
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27.
公开(公告)号:US10420852B2
公开(公告)日:2019-09-24
申请号:US15529430
申请日:2015-11-26
Inventor: Jean-Michel Pouvesle , Eric Robert , Sebastien Dozias , Michel Hugnot , Vanessa Sarron , Thibault Darny
Abstract: The invention relates to a method (S) for generating a plurality of cold-plasma jets at atmospheric pressure in order to treat a target (2), wherein said method includes the following steps: producing (S1) a primary cold-plasma jet (3) at atmospheric pressure using a plasma source (10); placing (S2) a substrate (20, 21, 30, 32, 34) near the target (2) to be treated, said substrate (20, 21, 30, 32, 34) including at least two through-holes; and passing (S3) the plasma through the through-holes (22) of the substrate (20) such as to generate at least two secondary cold-plasma jets (4) at atmospheric pressure.
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公开(公告)号:US20180344590A1
公开(公告)日:2018-12-06
申请号:US15779842
申请日:2016-11-28
Inventor: Arayik HAMBARDZUMYAN , Fabienne MEDUCIN-MICHAUD , Samuel GUILLOT
CPC classification number: B01F17/0028 , A61K8/0241 , A61K8/062 , A61K8/19 , A61K8/72 , A61K2800/10 , A61K2800/413 , A61Q19/00
Abstract: The use of lignin in an oil-in-water emulsion, the oil phase representing at least 50 wt. % of the emulsion, in order to delay the evaporation of the oil phase and/or increase the mechanical strength of the adsorption layer formed by the lignin.
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公开(公告)号:US20180194997A1
公开(公告)日:2018-07-12
申请号:US15746386
申请日:2016-07-19
Inventor: Franck SUZENET , Doina SIRBU , Gérald GUILLAUMET , Pascal BONNET
IPC: C09K11/06 , C07D471/14 , C07D487/04 , C07D487/14 , C07F5/02 , G01N33/58
CPC classification number: C09K11/06 , C07B37/10 , C07B43/04 , C07D471/14 , C07D487/04 , C07D487/14 , C07F5/025 , C07F7/0812 , G01N33/582 , H01L51/0072
Abstract: The present invention relates to the use, as a fluorescent chromophore, of a compound with formula (I) wherein: A1 is —N— or —C(Y1)—; A2 is —N— or —C(Y2)—; A3 is —N— or —C(Y3)—; A4 is —N— or —C(Y4)—; at least one of A1, A2, A3 and A4 representing —N—; X1 is —N— or —C(Y5)—; X2 is —N— or —C(Y6)—; X3 is —N— or —C(Y7)—; and Y1, Y2, Y3, Y4, Y5, Y6 and Y7 are in particular chosen independently of one another from the group made up of: H, electron-donor groups and electron-attracting groups.
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公开(公告)号:US12249515B2
公开(公告)日:2025-03-11
申请号:US17547238
申请日:2021-12-10
Applicant: Tokyo Electron Limited , UNIVERSITE D'ORLEANS
Inventor: Shigeru Tahara , Jacques Faguet , Kaoru Maekawa , Kumiko Ono , Nagisa Sato , Remi Dussart , Thomas Tillocher , Philippe Lefaucheux , Gaëlle Antoun
IPC: H01L21/311 , H01J37/32 , H01L21/3065 , H01L21/3213
Abstract: An etching method includes: a physical adsorption process of physically adsorbing an adsorbate based on a first processing gas on a film to be etched under a condition that the pressure of the first processing gas is smaller than the saturated vapor pressure of the first processing gas with respect to a temperature of an object to be processed while cooling the object to be processed on which the film to be etched is formed; and an etching process of etching the film to be etched by reacting the adsorbate with the film to be etched by a plasma of a second processing gas.
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