公开(公告)号：US20220102160A1

公开(公告)日：2022-03-31

申请号：US17547238

申请日：2021-12-10

Applicant: Tokyo Electron Limited ,  UNIVERSITE D'ORLEANS

Inventor： Shigeru TAHARA ,  Jacques FAGUET ,  Kaoru MAEKAWA ,  Kumiko ONO ,  Nagisa SATO ,  Remi DUSSART ,  Thomas TILLOCHER ,  Philippe LEFAUCHEUX ,  Gaëlle ANTOUN

IPC: H01L21/311 ,  H01J37/32

Abstract: An etching method includes: a physical adsorption process of physically adsorbing an adsorbate based on a first processing gas on a film to be etched under a condition that the pressure of the first processing gas is smaller than the saturated vapor pressure of the first processing gas with respect to a temperature of an object to be processed while cooling the object to be processed on which the film to be etched is formed; and an etching process of etching the film to be etched by reacting the adsorbate with the film to be etched by a plasma of a second processing gas.

公开(公告)号：US20200381264A1

公开(公告)日：2020-12-03

申请号：US16770084

申请日：2018-12-11

Applicant: TOKYO ELECTRON LIMITED ,  UNIVERSITE D'ORLEANS

Inventor： Koichi YATSUDA ,  Kaoru MAEKAWA ,  Nagisa SATO ,  Kumiko ONO ,  Shigeru TAHARA ,  Jacques FAGUET ,  Remi DUSSART ,  Thomas TILLOCHER ,  Philippe LEFAUCHEUX ,  Gaëlle ANTOUN

IPC: H01L21/311

Abstract: A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.

公开(公告)号：US20150380282A1

公开(公告)日：2015-12-31

申请号：US14751655

申请日：2015-06-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takao FUNAKUBO ,  Hirofumi HAGA ,  Shinichi KOZUKA ,  Wataru OZAWA ,  Akihiro SAKAMOTO ,  Naoki TANIGUCHI ,  Hiroshi TSUJIMOTO ,  Kumiko ONO

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32174 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/3299

Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.

Abstract translation: 本文公开的控制器在第一步骤中以第一能量条件驱动高频发生源，并且在第二步骤中驱动处于第二能量条件的高频发生源。 在第一步骤和第二步骤的切换时间之前，控制器将从气体供应系统供应的气体物质切换到处理容器中，并将切换后的初始阶段的气体流量设置为大于气体 经过初期的稳定期间的流量。

公开(公告)号：US20160299514A1

公开(公告)日：2016-10-13

申请号：US15080692

申请日：2016-03-25

Applicant: Tokyo Electron Limited

Inventor： Kumiko ONO ,  Hiroshi TSUJIMOTO ,  Atsushi SAWACHI ,  Norihiko AMIKURA ,  Norikazu SASAKI ,  Yoshitaka KAWAGUCHI

IPC: G05D16/20

CPC classification number: G05D7/0647

Abstract: A gas supply control method uses a pressure control flowmeter and first and second valves provided upstream and downstream, respectively, of the pressure control flowmeter in a gas supply line. The pressure control flowmeter includes a control valve and an orifice. The gas supply control method includes maintaining a pressure P1 of a first gas supply pipe between the orifice and the control valve and a pressure P2 of a second gas supply pipe between the orifice and the second valve so as to satisfy P1>2×P2. The supply of gas is controlled by controlling the opening and closing of the second valve with the first valve being open and the control valve being controlled. A volume V1 of the first gas supply pipe and a volume V2 of the second gas supply pipe have a relationship of V1/V2≧9.

Abstract translation: 气体供给控制方法使用压力控制用流量计和分别设置在气体供给管路中的压力控制用流量计的上游和下游的第一阀和第二阀。 压力控制流量计包括控制阀和孔。 气体供给控制方法包括：保持孔和控制阀之间的第一气体供给管的压力P1和孔与第二阀之间的第二气体供给管的压力P2，以满足P1> 2×P2。 通过控制第一阀打开并控制控制阀来控制第二阀的打开和关闭来控制气体供应。 第一气体供给管的体积V1和第二气体供给管的体积V2具有V1 /V2≥9的关系。

公开(公告)号：US20190139744A1

公开(公告)日：2019-05-09

申请号：US16239756

申请日：2019-01-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takao FUNAKUBO ,  Hirofumi HAGA ,  Shinichi KOZUKA ,  Wataru OZAWA ,  Akihiro SAKAMOTO ,  Naoki TANIGUCHI ,  Hiroshi TSUJIMOTO ,  Kumiko ONO

IPC: H01J37/32

Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.

公开(公告)号：US20180286721A1

公开(公告)日：2018-10-04

申请号：US15938916

申请日：2018-03-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kumiko ONO ,  Hiroshi TSUJIMOTO

IPC: H01L21/67 ,  G05D7/06 ,  G05B15/02 ,  H01L21/683 ,  H01L21/311 ,  H01L21/027 ,  H01J37/32

Abstract: A method according to an aspect includes outputting gas continuously from a flow rate controller, closing a valve, obtaining a first pressure rise characteristic, outputting the gas intermittently from the flow rate controller, closing the valve, obtaining a second pressure rise characteristic, obtaining a third pressure rise characteristic, obtaining a fourth pressure rise characteristic, obtaining a first required time required from the third pressure rise characteristic, obtaining a second required time from the fourth pressure rise characteristic, obtaining an estimated time until a predetermined pressure is reached, in a case where the intermittent output of the gas is performed assuming that there is no delay time, and obtaining a parameter representing a difference between the estimated time and the second required time.