公开(公告)号：US20240203746A1

公开(公告)日：2024-06-20

申请号：US18391618

申请日：2023-12-20

申请人： SEMES CO., LTD. ,  UIF (University Industry Foundation), Yonsei University

发明人： Hang Lim LEE ,  Min Young KIM ,  Jung Woo OH ,  Kyung Hwan KIM ,  Sun Hae CHOI

IPC分类号： H01L21/306

CPC分类号： H01L21/30604

摘要： A chemical etching method using a metal catalyst is provided that prevents deterioration of device performance by preventing the formation of deep-level impurities inside silicon. The etching method comprises forming a metal catalyst containing nickel silicide on a silicon substrate, and selectively etching the silicon substrate in contact with the metal catalyst through chemical etching of the metal catalyst.

公开(公告)号：US20240203704A1

公开(公告)日：2024-06-20

申请号：US18526489

申请日：2023-12-01

申请人： SEMES CO., LTD.

发明人： Yoon Seok CHOI ,  Yun Sang KIM ,  Han Lim KANG ,  Hyun Woo JO ,  Sang Jeong LEE ,  Youn Gun BONG

IPC分类号： H01J37/32

CPC分类号： H01J37/32651 ,  H01J37/32522 ,  H01J37/3255 ,  H01J37/32568 ,  H01J2237/3348

摘要： The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes an ion blocker dividing the inner space into a first space at a bottom side and a second space at a top side; a support unit configured to support a substrate at the first space; and a plasma source generating a plasma at the inner space, and wherein a plurality of passages are formed at the ion blocker for flowing a fluid from the second space to the first space, and the ion blocker is made of a dielectric substance, and an ion among an ion and a radical included in the plasma is captured while passing through the passage.

公开(公告)号：US20240203699A1

公开(公告)日：2024-06-20

申请号：US18538919

申请日：2023-12-13

申请人： SEMES CO., LTD.

发明人： Young Jo JIN ,  Dong Young JANG ,  Yun Sang KIM ,  Min Sung JEON ,  Min Hee HONG ,  Young Seo PARK ,  Jeong Sik KIM

IPC分类号： H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC分类号： H01J37/32449 ,  H01J37/32201 ,  H01L21/02274 ,  H01L21/67098 ,  H01L21/67248

摘要： Proposed are a substrate treatment method and a substrate treatment system in which a cooling process with an improved cooling speed and an improved cooling efficiency is applied in a substrate treatment process using an upper heat source. A substrate treatment method etching a substrate at an atomic layer level by using a processing unit and a thermal treatment unit may be provided. The substrate treatment method includes a surface treatment process in which a substrate surface is modified in the processing unit, a desorption process in which the substrate surface-treated in the processing unit is heated by the upper heat source in the thermal treatment unit, thereby generating a desorption reaction on the substrate surface, and a temperature adjustment process in which the substrate is cooled by a cooling plate in the thermal treatment unit, thereby maintaining a temperature of the substrate at a set temperature range.

公开(公告)号：US20240203696A1

公开(公告)日：2024-06-20

申请号：US18387655

申请日：2023-11-07

申请人： SEMES CO., LTD.

发明人： Tae Sung KIM ,  Duk Hyun SON

IPC分类号： H01J37/32

CPC分类号： H01J37/32449 ,  H01J2237/334

摘要： The substrate processing device includes a chamber in which a processing space for processing a substrate is formed, a substrate support unit supporting the substrate in the processing space, a gas supply portion supplying process gas to the processing space, a gas supply unit supplying gas to the gas supply portion, and a controller connected to the gas supply unit, wherein the gas supply unit includes a flow control valve controlling a flow rate of the process gas supplied through a gas supply line, and the controller controls, during a first time, the flow control valve to alternately provide supply of a flow rate greater than an average flow rate for the first time and supply of a flow rate less than the average flow rate.

公开(公告)号：US20240199377A1

公开(公告)日：2024-06-20

申请号：US18542667

申请日：2023-12-16

申请人： SEMES CO., LTD.

发明人： Nahyun Lee ,  Chuljun Park ,  Myungjin Lee

IPC分类号： B66B5/22 ,  B66B7/04

CPC分类号： B66B5/22 ,  B66B7/044

摘要： Provided is a tower lift including a rail module extending in a vertical direction, a carriage module that is movable in a magnetic levitation manner along the rail module, and a braking device configured to move integrally with the carriage module along the rail module, wherein the braking device includes a first braking body configured to prevent the carriage module from falling through selective contact with the rail module, an elastic member provided above the first braking body and configured to apply an upward elastic force to the first braking body, and an actuator provided below the first braking body and configured to pull the first braking body downward through a rotation shaft connection structure connected to the first braking body.

公开(公告)号：US20240199348A1

公开(公告)日：2024-06-20

申请号：US18541045

申请日：2023-12-15

申请人： SEMES CO., LTD.

发明人： Hyun Jun LEE ,  Jae Hee HWANG ,  Seon Jung KIM ,  Tae Hyun JO

IPC分类号： B65G47/90 ,  B65G41/02 ,  B65G47/88

CPC分类号： B65G47/905 ,  B65G41/02 ,  B65G47/88 ,  B65G47/901 ,  B65G2201/0214 ,  B65G2203/0233

摘要： Disclosed is an apparatus for transferring an article, the apparatus including: a vehicle moving along a moving rail installed on a ceiling; a main body connected to the vehicle and providing an interior space in which an article is located; a hoist module provided in the main body, and for hoisting a belt by winding or unwinding the belt; a hand unit fixed at one end of the belt and for gripping the article; and a drop preventing member provided in the main body, and for preventing the article from dropping during moving of the vehicle, in which the drop preventing member includes support pins provided at different heights depending on types of article.

公开(公告)号：US20240186167A1

公开(公告)日：2024-06-06

申请号：US18507439

申请日：2023-11-13

申请人： SEMES CO., LTD.

发明人： Kyungsik SHIN ,  Seunghwan LEE ,  Kyoungdon LEE

IPC分类号： H01L21/68 ,  H01L21/67 ,  H01L21/677

CPC分类号： H01L21/68 ,  H01L21/67098 ,  H01L21/67778

摘要： An apparatus for processing a substrate may include a substrate holding part configured to maintain and support a substrate, a substrate transfer part configured to load the substrate onto the substrate holding part and to unload the substrate from the substrate holding part, and a substrate processing part configured to heat the substrate or to cool the substrate. The substrate holding part may include a plate configured to maintain and support the substrate, guide parts configured to move the substrate into a central region of the plate, and an alignment part configured to move the guide parts toward the central region of the plate utilizing a vacuum suction mechanism.

公开(公告)号：US20240186155A1

公开(公告)日：2024-06-06

申请号：US18523893

申请日：2023-11-30

申请人： SEMES CO., LTD.

发明人： Ki Sang EUM ,  Dong Woon PARK ,  Young Jun SON ,  Woo Ram LEE ,  Jin Ho CHOI

IPC分类号： H01L21/67 ,  H01L21/687

CPC分类号： H01L21/67051 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67253 ,  H01L21/68785

摘要： Proposed is a substrate processing apparatus for cleaning the bottom surface of a substrate. The apparatus includes a processing container configured to form a processing space for a substrate, a substrate support unit provided inside the processing space and configured to support the substrate, a first nozzle unit configured to have a first nozzle member provided on a side of the substrate support unit inside the processing space and supplying a processing fluid toward a center area of a bottom surface of the substrate, and a second nozzle member provided to be fixedly coupled to the substrate support unit and supplying a processing fluid toward an edge area of the bottom surface of the substrate, wherein the first nozzle member is provided to rotate between a center position and an end position of the bottom surface of the substrate.

公开(公告)号：US20240186135A1

公开(公告)日：2024-06-06

申请号：US18497425

申请日：2023-10-30

申请人： SEMES CO., LTD.

发明人： Hae Won CHOI ,  Thomas Jongwan KWON ,  Chengyeh HSU

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02101 ,  H01L21/67028

摘要： A substrate processing method using a supercritical fluid is provided that can deposit a conformal film in a trench with a high aspect ratio and allows complete filling without voids. The substrate processing method comprises performing a supercritical process by repeating a first step, a first vent step, a second step, and a second vent step a plurality of times in order, supplying, in the first step, a first process fluid containing a precursor and a first supercritical fluid to a reactor so that a pressure of the reactor repeats rise and fall within a first pressure range a plurality of times, venting, in the first vent step, the reactor to lower the pressure of the reactor below the first pressure range, supplying, in the second step, a second process fluid containing a reducing fluid to the reactor so that the pressure of the reactor repeats rise and fall within a second pressure range different from the first pressure range a plurality of times, venting, in the second vent step, the reactor to lower the pressure of the reactor below the second pressure range.

公开(公告)号：US20240184208A1

公开(公告)日：2024-06-06

申请号：US18523881

申请日：2023-11-30

申请人： SEMES CO., LTD.

发明人： Hyun Min KIM

IPC分类号： G03F7/16 ,  H01L21/67

CPC分类号： G03F7/16 ,  H01L21/67017

摘要： Proposed is a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes a process chamber configured to have a processing space therein, a support unit configured to support a substrate within the processing space, a gas supply unit configured to supply a processing gas to the processing space, and an exhaust unit configured to exhaust the processing space, wherein the gas supply unit may vaporize a processing fluid in a liquid state by using at least one of a bubbling method and a blowing method and supply the processing fluid to the processing space.