SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT SYSTEM

    公开(公告)号:US20240203699A1

    公开(公告)日:2024-06-20

    申请号:US18538919

    申请日:2023-12-13

    申请人: SEMES CO., LTD.

    IPC分类号: H01J37/32 H01L21/02 H01L21/67

    摘要: Proposed are a substrate treatment method and a substrate treatment system in which a cooling process with an improved cooling speed and an improved cooling efficiency is applied in a substrate treatment process using an upper heat source. A substrate treatment method etching a substrate at an atomic layer level by using a processing unit and a thermal treatment unit may be provided. The substrate treatment method includes a surface treatment process in which a substrate surface is modified in the processing unit, a desorption process in which the substrate surface-treated in the processing unit is heated by the upper heat source in the thermal treatment unit, thereby generating a desorption reaction on the substrate surface, and a temperature adjustment process in which the substrate is cooled by a cooling plate in the thermal treatment unit, thereby maintaining a temperature of the substrate at a set temperature range.