知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

55 records (took 0.026 seconds)

    METHOD AND SYSTEM FOR MONITORING DEPOSITION PROCESS
    22.
    发明公开
    METHOD AND SYSTEM FOR MONITORING DEPOSITION PROCESS 审中-公开

    公开(公告)号：US20240167814A1

    公开(公告)日：2024-05-23

    申请号：US18394623

    申请日：2023-12-22

    Applicant: NOVA MEASURING INSTRUMENTS, INC.

    Inventor： Heath A. POIS ,  Laxmi WARAD ,  Srinivasan RANGARAJAN

    IPC: G01B15/02 ,  G01N23/2273

    CPC classification number: G01B15/02 ,  G01N23/2273 ,  G01N2223/61

    Abstract: Quantification of the passivation and the selectivity in deposition process is disclosed. The passivation is evaluated by calculating film thicknesses on pattern lines and spaces. An XPS signal is used, which is normalized with X-ray flux number. The method is efficient for calculating thickness in selective deposition process, wherein the thickness can be used as metric to measure selectivity. Measured photoelectrons for each of the materials can be expressed as a function of the thickness of the material overlaying it, adjusted by material constant and effective attenuation length. In selective deposition over a patterned wafer, the three expressions can be solved to determine the thickness of the intended deposition and the thickness of any unintended deposition over passivated pattern.

    MASS SPECTROMETER DETECTOR AND SYSTEM AND METHOD USING THE SAME
    28.
    发明申请
    MASS SPECTROMETER DETECTOR AND SYSTEM AND METHOD USING THE SAME 有权

    公开(公告)号：US20220223395A1

    公开(公告)日：2022-07-14

    申请号：US17531674

    申请日：2021-11-19

    Applicant: NOVA MEASURING INSTRUMENTS, INC.

    Inventor： Christopher F. BEVIS ,  Yungman Alan LIU ,  David Allen REED ,  Eli CHEIFETZ ,  Amit WEINGARTEN ,  Alexander KADYSHEVITCH

    IPC: H01J49/02 ,  H01J49/06 ,  G01T1/20 ,  G01T1/208 ,  G01T1/29 ,  G01T1/28

    Abstract: An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.

    Feed-forward of multi-layer and multi-process information using XPS and XRF technologies
    29.
    发明授权
    Feed-forward of multi-layer and multi-process information using XPS and XRF technologies 有权

    公开(公告)号：US11029148B2

    公开(公告)日：2021-06-08

    申请号：US16872568

    申请日：2020-05-12

    Applicant: NOVA MEASURING INSTRUMENTS, INC.

    Inventor： Heath A. Pois ,  Wei Ti Lee ,  Lawrence V. Bot ,  Michael C. Kwan ,  Mark Klare ,  Charles Thomas Larson

    IPC: G01B15/02 ,  G01N23/2251 ,  G01N23/225 ,  G01N23/223 ,  G01N23/2273 ,  G01N23/22

    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

Patent Agency Ranking