公开(公告)号：US20060198070A1

公开(公告)日：2006-09-07

申请号：US11416819

申请日：2006-05-03

Applicant: Kenneth Marr

Inventor： Kenneth Marr

IPC: H02H9/00

CPC classification number: H01L27/0255 ,  H03K5/08 ,  H03K17/08142

Abstract: A combination of a current limiting resistor and a clamping Schottky diode prevent substantial forward biasing of a pn junction associated with a pad in a snapback device during normal operation, but do not substantially affect triggering of the device during an unbiased electrostatic discharge event. Minority carrier injection from n+ devices is substantially reduced, and the circuit may also be used to clamp an oxide voltage in a thin oxide semiconductor device

Abstract translation: 限流电阻和钳位肖特基二极管的组合防止在正常操作期间与快速恢复装置中的焊盘相关联的pn结的基本正向偏置，但是在非偏置静电放电事件期间基本上不影响器件的触发。 来自n +装置的少数载流子注入显着减少，并且该电路也可用于将氧化物电压钳位在薄氧化物半导体器件

公开(公告)号：US20050029622A1

公开(公告)日：2005-02-10

申请号：US10931714

申请日：2004-09-01

Applicant: Kenneth Marr ,  Shubneesh Batra

Inventor： Kenneth Marr ,  Shubneesh Batra

IPC: H01L23/525 ,  H01L29/00 ,  H01L21/44

CPC classification number: H01L23/5252 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10S257/928 ,  H01L2924/00

Abstract: An antifuse structure and method of use are disclosed. According to one embodiment of the present invention a first programming voltage is coupled to a well of a first conductivity type in a substrate of a second conductivity type in an antifuse. A second programming voltage is coupled to a conductive terminal of the second conductivity type in the antifuse to create a current path through an insulator between the conductive terminal and the well to program the antifuse. The first programming voltage may be coupled to an ohmic contact in the well in the antifuse.

Abstract translation: 公开了反熔丝结构和使用方法。 根据本发明的一个实施例，第一编程电压在反熔丝中耦合到第二导电类型的衬底中的第一导电类型的阱。 第二编程电压在反熔丝中耦合到第二导电类型的导电端子，以产生通过导电端子和阱之间的绝缘体的电流路径，以对反熔丝进行编程。 第一编程电压可以耦合到反熔丝中的阱中的欧姆接触。