公开(公告)号：US20140227882A1

公开(公告)日：2014-08-14

申请号：US14232989

申请日：2012-07-12

申请人： Kensuke Inai ,  Kazuya Dobashi

发明人： Kensuke Inai ,  Kazuya Dobashi

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02057 ,  H01L21/02046 ,  H01L21/02068 ,  H01L21/3086 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/67115

摘要： Deposits such as particles deposited on a surface of a target object can be easily removed while suppressing damage to the target object such as destruction of pattern formed on the surface of the target object or film roughness on the surface of the target object. In a pre-treatment, vapor of a hydrogen fluoride is supplied to a wafer W to dissolve a natural oxide film 11, so that a deposit 10 attached to a surface of the natural oxide film 11 is slightly separated from a surface of the wafer W. A carbon dioxide gas that does not react with an underlying film 12 is supplied to a processing gas atmosphere where the wafer W is placed, so that a gas cluster of the carbon dioxide gas is generated. Then, the gas cluster in a non-ionized state is irradiated toward the wafer W to remove the deposit 10.

摘要翻译： 可以容易地去除沉积在目标物体表面上的沉积物，同时抑制目标物体的损伤，例如在目标物体的表面上形成的图案的破坏或目标物体的表面上的膜粗糙度。 在预处理中，将氟化氢的蒸气供给到晶片W以溶解天然氧化膜11，使得附着在自然氧化膜11的表面上的沉积物10与晶片W的表面稍微分离 将不与下面的膜12反应的二氧化碳气体供给到放置晶片W的处理气体气氛中，从而产生二氧化碳气体的气体簇。 然后，将非离子化状态的气体簇朝向晶片W照射以除去沉积物10。

公开(公告)号：US20120312334A1

公开(公告)日：2012-12-13

申请号：US13594412

申请日：2012-08-24

申请人： Kazuya DOBASHI ,  Takashi FUSE

发明人： Kazuya DOBASHI ,  Takashi FUSE

IPC分类号： B08B3/08

CPC分类号： G03F7/422 ,  H01L21/31133 ,  H01L21/6708

摘要： A resist removal apparatus and method are effective in removing a resist without oxidizing the substrate material other than the resist. The resist removal apparatus, which removes resist from a wafer on which a resist film has been formed, includes a cluster spraying unit which sprays a wafer with clusters each of which is formed of a plurality of organic solvent molecules agglomerated together.

摘要翻译： 抗蚀剂去除装置和方法有效地除去抗蚀剂而不氧化抗蚀剂以外的基底材料。 从其上形成有抗蚀剂膜的晶片去除抗蚀剂的抗蚀剂去除装置包括：簇喷射单元，其喷射晶片，每个簇由多个聚集在一起的有机溶剂分子形成。

公开(公告)号：US08268185B2

公开(公告)日：2012-09-18

申请号：US12097767

申请日：2007-05-28

申请人： Kazuya Dobashi ,  Teruyuki Hayashi ,  Kohei Tsugita ,  Misako Saito

发明人： Kazuya Dobashi ,  Teruyuki Hayashi ,  Kohei Tsugita ,  Misako Saito

IPC分类号： G01N1/32 ,  G01N1/28

CPC分类号： G01N1/32 ,  G01N21/3103 ,  G01N33/38

摘要： A method of analyzing a quartz member includes the step of supplying an etchant to the quartz member so as to etch the quartz member. The method also includes analyzing the etchant used in the supplying step. The etchant is supplied to a concave etchant receiving portion that is formed in the quartz member prior to the supplying step and has an inner wall thereof formed of the quartz member.

摘要翻译： 分析石英构件的方法包括向石英构件供应蚀刻剂以蚀刻石英构件的步骤。 该方法还包括分析在供应步骤中使用的蚀刻剂。 蚀刻剂被供给到在供给步骤之前形成在石英构件中并具有由石英构件形成的内壁的凹蚀刻剂接收部分。

公开(公告)号：US20110244693A1

公开(公告)日：2011-10-06

申请号：US13163305

申请日：2011-06-17

申请人： Akitake Tamura ,  Kazuya Dobashi ,  Teruyuki Hayashi

发明人： Akitake Tamura ,  Kazuya Dobashi ,  Teruyuki Hayashi

IPC分类号： H01L21/31 ,  C23C4/04 ,  C23C16/06

CPC分类号： C23C16/4404 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45561 ,  Y10T428/265

摘要： A component for a semiconductor processing apparatus includes a matrix defining a shape of the component, and a protection film covering a predetermined surface of the matrix. The protection film consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film has a porosity of less than 1% and a thickness of 1 nm to 10 μm.

摘要翻译： 半导体处理装置的部件包括限定部件的形状的矩阵和覆盖矩阵的预定表面的保护膜。 保护膜基本上由选自铝，硅，铪，锆和钇的第一元素的无定形氧化物组成。 保护膜的孔隙率小于1％，厚度为1nm至10μm。

公开(公告)号：US20100252068A1

公开(公告)日：2010-10-07

申请号：US12752813

申请日：2010-04-01

申请人： Hiroshi KANNAN ,  Noboru Tamura ,  Kazuya Dobashi

发明人： Hiroshi KANNAN ,  Noboru Tamura ,  Kazuya Dobashi

IPC分类号： B08B9/027 ,  H05H1/00 ,  B44C1/22

CPC分类号： H01J37/321 ,  B08B7/0035 ,  C23G5/00 ,  H01J37/32357 ,  H01L21/3065 ,  H01L21/31116

摘要： A plasma generation method in a toroidal plasma generator that includes a gas passage having a gas entrance and a gas outlet and forming a circuitous path and a coil wound around a part of the gas passage includes the steps of supplying a mixed gas of an Ar gas and an NF3 gas containing at least 5% of NF3 and igniting plasma by driving the coil with a high-frequency power, wherein the plasma ignition step is conducted under a total pressure of 6.65-66.5 Pa.

摘要翻译： 环形等离子体发生器中的等离子体产生方法包括具有气体入口和气体出口并形成迂回路径的气体通道和缠绕在气体通道的一部分上的线圈的步骤包括以下步骤：将Ar气体 以及包含至少5％的NF 3的NF 3气体，并通过以高频功率驱动线圈点燃等离子体，其中等离子体点火步骤在6.65-66.5Pa的总压力下进行。