公开(公告)号：US09214364B2

公开(公告)日：2015-12-15

申请号：US13429720

申请日：2012-03-26

申请人： Kazuya Dobashi ,  Kensuke Inai ,  Akitaka Shimizu ,  Kenta Yasuda ,  Yu Yoshino ,  Toshihiro Aida ,  Takehiko Senoo

发明人： Kazuya Dobashi ,  Kensuke Inai ,  Akitaka Shimizu ,  Kenta Yasuda ,  Yu Yoshino ,  Toshihiro Aida ,  Takehiko Senoo

IPC分类号： H01L21/67 ,  C23C16/455 ,  H01J37/32

CPC分类号： H01L21/67028 ,  C23C16/45563 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/45587 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67051 ,  H01L21/67069

摘要： A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules.

摘要翻译： 基板清洗装置包括支撑单元，设置在具有气体排出口的处理室中，用于支撑基板; 一个或多个喷嘴单元，每个喷嘴单元用于将气体簇喷射到由支撑单元支撑的基板的周边部分，以从周边部分去除不需要的物质; 以及用于在喷射气体簇期间改变支撑单元和喷嘴单元的相对位置的移动机构。 每个喷嘴单元排出具有高于处理室中的压力的​​清洁气体，使得清洁气体被绝热膨胀以形成原子和/或分子的聚集体。

公开(公告)号：US20140227882A1

公开(公告)日：2014-08-14

申请号：US14232989

申请日：2012-07-12

申请人： Kensuke Inai ,  Kazuya Dobashi

发明人： Kensuke Inai ,  Kazuya Dobashi

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02057 ,  H01L21/02046 ,  H01L21/02068 ,  H01L21/3086 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/67115

摘要： Deposits such as particles deposited on a surface of a target object can be easily removed while suppressing damage to the target object such as destruction of pattern formed on the surface of the target object or film roughness on the surface of the target object. In a pre-treatment, vapor of a hydrogen fluoride is supplied to a wafer W to dissolve a natural oxide film 11, so that a deposit 10 attached to a surface of the natural oxide film 11 is slightly separated from a surface of the wafer W. A carbon dioxide gas that does not react with an underlying film 12 is supplied to a processing gas atmosphere where the wafer W is placed, so that a gas cluster of the carbon dioxide gas is generated. Then, the gas cluster in a non-ionized state is irradiated toward the wafer W to remove the deposit 10.

摘要翻译： 可以容易地去除沉积在目标物体表面上的沉积物，同时抑制目标物体的损伤，例如在目标物体的表面上形成的图案的破坏或目标物体的表面上的膜粗糙度。 在预处理中，将氟化氢的蒸气供给到晶片W以溶解天然氧化膜11，使得附着在自然氧化膜11的表面上的沉积物10与晶片W的表面稍微分离 将不与下面的膜12反应的二氧化碳气体供给到放置晶片W的处理气体气氛中，从而产生二氧化碳气体的气体簇。 然后，将非离子化状态的气体簇朝向晶片W照射以除去沉积物10。

公开(公告)号：US09837260B2

公开(公告)日：2017-12-05

申请号：US14232989

申请日：2012-07-12

申请人： Kensuke Inai ,  Kazuya Dobashi

发明人： Kensuke Inai ,  Kazuya Dobashi

IPC分类号： B08B5/00 ,  H01L21/02 ,  H01L21/67 ,  H01L21/308

CPC分类号： H01L21/02057 ,  H01L21/02046 ,  H01L21/02068 ,  H01L21/3086 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/67115

摘要： Deposits such as particles deposited on a surface of a target object can be easily removed while suppressing damage to the target object such as destruction of pattern formed on the surface of the target object or film roughness on the surface of the target object. In a pre-treatment, vapor of a hydrogen fluoride is supplied to a wafer W to dissolve a natural oxide film 11, so that a deposit 10 attached to a surface of the natural oxide film 11 is slightly separated from a surface of the wafer W. A carbon dioxide gas that does not react with an underlying film 12 is supplied to a processing gas atmosphere where the wafer W is placed, so that a gas cluster of the carbon dioxide gas is generated. Then, the gas cluster in a non-ionized state is irradiated toward the wafer W to remove the deposit 10.