公开(公告)号：US09383264B2

公开(公告)日：2016-07-05

申请号：US13428549

申请日：2012-03-23

Applicant: Yung-Chow Peng ,  Ching-Ho Chang ,  Jui-Cheng Huang

Inventor： Yung-Chow Peng ,  Ching-Ho Chang ,  Jui-Cheng Huang

IPC: G01K7/00 ,  G01K7/01

CPC classification number: G01K7/01 ,  Y10T307/76

Abstract: A thermal sensing system includes a circuit having a layout including standard cells arranged in rows and columns. First and second current sources provide first and second currents, respectively. The thermal sensing system includes thermal sensing units, first and second switching modules, and an analog to digital converter (ADC). Each thermal sensing unit is configured to provide a voltage drop dependent on a temperature at that thermal sensing unit. The first switching module is configured to select one of the thermal sensing units. The second switching module includes at least one switch controllable by a control signal. The at least one switch is configured to selectively couple the thermal sensing units, based on the control signal, to one of the first and second current sources, via the first switching module. The ADC is configured to convert an analog voltage, provided by the selected thermal sensing unit, to a digital value.

Abstract translation: 热感测系统包括具有布置成行和列的标准单元的布局的电路。 第一和第二电流源分别提供第一和第二电流。 热感测系统包括热敏单元，第一和第二开关模块以及模数转换器（ADC）。 每个热敏单元被配置成提供取决于该热感测单元处的温度的电压降。 第一开关模块被配置为选择一个热感测单元。 第二开关模块包括可由控制信号控制的至少一个开关。 所述至少一个开关被配置为经由所述第一开关模块将所述热感测单元基于所述控制信号选择性地耦合到所述第一和第二电流源之一。 ADC配置为将所选热敏单元提供的模拟电压转换为数字值。

公开(公告)号：US09016939B2

公开(公告)日：2015-04-28

申请号：US13632498

申请日：2012-10-01

Applicant: Ching-Ho Chang ,  Jui-Cheng Huang ,  Yung-Chow Peng

Inventor： Ching-Ho Chang ,  Jui-Cheng Huang ,  Yung-Chow Peng

IPC: G01K7/00 ,  G01K7/01

CPC classification number: G01K7/01 ,  G01K15/005

Abstract: Some embodiments of the present disclosure relate to a stacked integrated chip structure having a thermal sensor that detects a temperature of one or a plurality of integrated chips. In some embodiments, the stacked integrated chip structure has a main integrated chip and a secondary integrated chip located on an interposer wafer. The main integrated chip has a reference voltage source that generates a bias current. The secondary integrated chip has a second thermal diode that receives the bias current and based thereupon generates a second thermal sensed voltage and a second reference voltage that is proportional to a temperature of the secondary integrated chip. A digital thermal sensor within the main integrated chip determines a temperature of the secondary integrated chip based upon as comparison of the second thermal sensed voltage and the reference voltage.

Abstract translation: 本公开的一些实施例涉及具有检测一个或多个集成芯片的温度的热传感器的堆叠集成芯片结构。 在一些实施例中，堆叠集成芯片结构具有位于插入器晶片上的主集成芯片和次集成芯片。 主集成芯片具有产生偏置电流的参考电压源。 次级集成芯片具有接收偏置电流的第二热二极管，并且基于此产生第二热感测电压和与次级集成芯片的温度成比例的第二参考电压。 基于与第二热感测电压和参考电压的比较，主集成芯片内的数字热传感器确定二次集成芯片的温度。

公开(公告)号：US20130264610A1

公开(公告)日：2013-10-10

申请号：US13441134

申请日：2012-04-06

Applicant: Tung-Tsun CHEN ,  Chia-Hua CHU ,  Chung-Hsien LIN ,  Jui-Cheng HUANG

Inventor： Tung-Tsun CHEN ,  Chia-Hua CHU ,  Chung-Hsien LIN ,  Jui-Cheng HUANG

IPC: H01L29/66 ,  H01L27/06

CPC classification number: H01L23/34 ,  B81B7/0096 ,  B81B2201/0278 ,  B81C1/0023 ,  H01L23/345 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device with temperature control system. Embodiments of the device may include a MEMS chip including a first heater with a dedicated first temperature control loop and a CMOS chip including a second heater with a dedicated second temperature control loop. Each control loop may have a dedicated temperature sensor for controlling the thermal output of each heater. The first heater and sensor are disposed proximate to a MEMS device in the MEMS chip for direct heating thereof. The temperature of the MEMS chip and CMOS chip are independently controllable of each other via the temperature control loops.

Abstract translation: 具有温度控制系统的半导体器件。 该装置的实施例可以包括包括具有专用第一温度控制回路的第一加热器和包括具有专用第二温度控制回路的第二加热器的CMOS芯片的MEMS芯片。 每个控制回路可以具有用于控制每个加热器的热输出的专用温度传感器。 第一加热器和传感器靠近MEMS芯片中的MEMS器件设置，用于直接加热MEMS芯片。 MEMS芯片和CMOS芯片的温度可以通过温度控制回路彼此独立控制。

公开(公告)号：US20130213139A1

公开(公告)日：2013-08-22

申请号：US13401134

申请日：2012-02-21

Applicant: Tung-Tsun CHEN ,  Jui-Cheng HUANG ,  Chung-Hsien LIN

Inventor： Tung-Tsun CHEN ,  Jui-Cheng HUANG ,  Chung-Hsien LIN

IPC: G01L7/00 ,  H01L29/84

CPC classification number: G01L21/22 ,  B81C99/0045 ,  H01L27/0688

Abstract: A vacuum sensor for sensing vacuum in a sealed enclosure is provided. The sealed enclosure includes active MEMS devices desired to be maintained in vacuum conditions. The vacuum sensor includes a motion beam anchored to an internal surface in the sealed enclosure. A driving electrode is disposed beneath the motion beam and a bias is supplied to cause the motion beam to deflect through electromotive force. A sensing electrode is also provided and detects capacitance between the sensing electrode disposed on the internal surface, and the motion beam. Capacitance changes as the gap between the motion beam and the sensing electrode changes. The amount of deflection is determined by the vacuum level in the sealed enclosure. The vacuum level in the sealed enclosure is thereby sensed by the sensing electrode.

Abstract translation: 提供了用于感测密封外壳中的真空的真空传感器。 密封的外壳包括希望保持在真空条件下的有源MEMS器件。 真空传感器包括锚定在密封外壳中的内表面的运动梁。 驱动电极设置在运动光束下方，并且提供偏压以使运动光束通过电动势偏转。 还提供感测电极并且检测设置在内表面上的感测电极与运动光束之间的电容。 电容随着运动光束与感应电极之间的间隙而变化。 偏转量由密封外壳中的真空度决定。 因此，密封外壳中的真空度由感测电极感测。

公开(公告)号：US08350367B2

公开(公告)日：2013-01-08

申请号：US12336400

申请日：2008-12-16

Applicant: Chi-Tsung Chiu ,  Chih-Pin Hung ,  Jui-Cheng Huang

Inventor： Chi-Tsung Chiu ,  Chih-Pin Hung ,  Jui-Cheng Huang

IPC: H01L23/552 ,  H01L21/56

CPC classification number: H01L21/6835 ,  H01L21/568 ,  H01L23/3121 ,  H01L23/49805 ,  H01L23/552 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Described herein are semiconductor device packages with EMI shielding and related methods. In one embodiment, a semiconductor device package includes: (1) a substrate unit including a grounding element disposed adjacent to a periphery of the substrate unit; (2) a semiconductor device disposed adjacent to an upper surface of the substrate unit; (3) a package body disposed adjacent to the upper surface and covering the semiconductor device; and (4) an EMI shield disposed adjacent to exterior surfaces of the package body and electrically connected to a connection surface of the grounding element. A lateral surface of the package body is substantially aligned with a lateral surface of the substrate unit, and the connection surface of the grounding element is electrically exposed adjacent to the lateral surface of the substrate unit. The grounding element corresponds to a remnant of a grounding via, and provides an electrical pathway to ground electromagnetic emissions incident upon the EMI shield.

Abstract translation: 这里描述的是具有EMI屏蔽和相关方法的半导体器件封装。 在一个实施例中，半导体器件封装包括：（1）衬底单元，其包括邻近衬底单元的周边设置的接地元件; （2）设置在所述衬底单元的上表面附近的半导体器件; （3）与上表面相邻并且覆盖半导体器件的封装体; 和（4）EMI封装体，其与所述封装主体的外表面相邻地设置并电连接到所述接地元件的连接表面。 封装主体的侧表面基本上与衬底单元的侧表面对准，并且接地元件的连接表面邻近衬底单元的侧表面电暴露。 接地元件对应于接地通孔的残留物，并且提供了电磁路径，用于接地入射在EMI屏蔽上的电磁辐射。

公开(公告)号：US20120218235A1

公开(公告)日：2012-08-30

申请号：US13035444

申请日：2011-02-25

Applicant: Yung-Chow Peng ,  Jui-Cheng Huang ,  Ching-Ho Chang ,  Nang Ping Tu

Inventor： Yung-Chow Peng ,  Jui-Cheng Huang ,  Ching-Ho Chang ,  Nang Ping Tu

IPC: G06F3/038 ,  G09G3/36 ,  H03M1/66

CPC classification number: H03M1/68 ,  G09G3/3688 ,  G09G2300/023 ,  G09G2310/027 ,  G09G2330/023 ,  H03M1/804

Abstract: A method for converting a multi-bit digital value to an analog value. The method includes, in a first conversion cycle, converting a first set of digital bits to a first analog voltage using passive charge-sharing. The method also includes, in a second conversion cycle, converting a second set of digital bits to a second analog voltage added to the first analog voltage using active charge-sharing. The first set of digital bits and the second set of digital bits are different bits of the multi-bit digital value.

Abstract translation: 一种用于将多位数字值转换为模拟值的方法。 该方法包括在第一转换周期中，使用无源电荷共享将第一组数字位转换为第一模拟电压。 该方法还包括在第二转换周期中，使用有源电荷共享将第二组数字位转换为添加到第一模拟电压的第二模拟电压。 第一组数字位和第二组数字位是多位数字值的不同位。

公开(公告)号：US20090194851A1

公开(公告)日：2009-08-06

申请号：US12336400

申请日：2008-12-16

Applicant: Chi-Tsung Chiu ,  Chih-Pin Hung ,  Jui-Cheng Huang

Inventor： Chi-Tsung Chiu ,  Chih-Pin Hung ,  Jui-Cheng Huang

IPC: H01L23/552 ,  H01L21/50

CPC classification number: H01L21/6835 ,  H01L21/568 ,  H01L23/3121 ,  H01L23/49805 ,  H01L23/552 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Described herein are semiconductor device packages with EMI shielding and related methods. In one embodiment, a semiconductor device package includes: (1) a substrate unit including a grounding element disposed adjacent to a periphery of the substrate unit; (2) a semiconductor device disposed adjacent to an upper surface of the substrate unit; (3) a package body disposed adjacent to the upper surface and covering the semiconductor device; and (4) an EMI shield disposed adjacent to exterior surfaces of the package body and electrically connected to a connection surface of the grounding element. A lateral surface of tile package body is substantially aligned with a lateral surface of the substrate unit, and the connection surface of the grounding element is electrically exposed adjacent to the lateral surface of the substrate unit. The grounding element corresponds to a remnant of a grounding via, and provides an electrical pathway to ground electromagnetic emissions incident upon the EMI shield.

Abstract translation: 这里描述的是具有EMI屏蔽和相关方法的半导体器件封装。 在一个实施例中，半导体器件封装包括：（1）衬底单元，其包括邻近衬底单元的周边设置的接地元件; （2）设置在所述衬底单元的上表面附近的半导体器件; （3）与上表面相邻并且覆盖半导体器件的封装体; 和（4）EMI封装体，其与所述封装主体的外表面相邻地设置并电连接到所述接地元件的连接表面。 瓦片封装主体的侧表面基本上与基板单元的侧表面对准，并且接地元件的连接表面邻近基板单元的侧表面电暴露。 接地元件对应于接地通孔的残留物，并且提供了电磁路径，用于接地入射在EMI屏蔽上的电磁辐射。

公开(公告)号：US07068107B2

公开(公告)日：2006-06-27

申请号：US10805297

申请日：2004-03-22

Applicant: Wen-Chi Wang ,  Chao-Cheng Lee ,  Jui-Cheng Huang ,  Jui-Yuan Tsai

Inventor： Wen-Chi Wang ,  Chao-Cheng Lee ,  Jui-Cheng Huang ,  Jui-Yuan Tsai

IPC: H03F3/30

CPC classification number: H03G1/0088

Abstract: The variable gain amplifier of the present invention includes at least an operation amplifier. By choosing one of output stages, a feedback resistor is selected and the gain of the variable gain amplifier is decided according to the resistance of the selected feedback resistor, as desired. By adjusting the gain of the variable gain amplifier, the received signals can be amplified or attenuated in accordance with design requirement. The variable gain amplifier can include a two-stage architecture, in which a first stage is used for coarse gain adjustment and a second stage is used for fine gain adjustment. The gain of the two-stage variable gain amplifier can be easily adjusted to a desired value.

Abstract translation: 本发明的可变增益放大器至少包括一个运算放大器。 通过选择输出级之一，根据需要选择反馈电阻，并根据所选反馈电阻的电阻决定可变增益放大器的增益。 通过调整可变增益放大器的增益，接收信号可以根据设计要求进行放大或衰减。 可变增益放大器可以包括两级架构，其中第一级用于粗增益调整，第二级用于精细增益调整。 两级可变增益放大器的增益可以很容易地调整到所需的值。