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    MEMORY AND METHOD OF FABRICATING THE SAME
    21.
    发明申请
    MEMORY AND METHOD OF FABRICATING THE SAME 有权
    存储器及其制造方法

    公开(公告)号：US20100025750A1

    公开(公告)日：2010-02-04

    申请号：US12183358

    申请日：2008-07-31

    Applicant: Yao-Fu Chan ,  Ta-Kang Chu ,  Jung-Chuan Ting ,  Cheng-Ming Yih

    Inventor： Yao-Fu Chan ,  Ta-Kang Chu ,  Jung-Chuan Ting ,  Cheng-Ming Yih

    IPC: H01L21/8247 ,  H01L27/115

    CPC classification number: H01L27/11521 ,  H01L27/11519 ,  H01L29/7881

    Abstract: A memory and a method of fabricating the same are provided. The memory is disposed on a substrate in which a plurality of trenches is arranged in parallel. The memory includes a gate structure and a doped region. The gate structure is disposed between the trenches. The doped region is disposed at one side of the gate structure, in the substrate between the trenches and in the sidewalls and bottoms of the trenches. The top surface of the doped region in the substrate between the trenches is lower than the surface of the substrate under the gate structure by a distance, and the distance is greater than 300 Å.

    Abstract translation: 提供了一种存储器及其制造方法。 存储器设置在其中多个沟槽平行布置的衬底上。 存储器包括栅极结构和掺杂区域。 栅极结构设置在沟槽之间。 掺杂区域设置在栅极结构的一侧，位于沟槽之间的衬底中以及沟槽的侧壁和底部中。 在沟槽之间的衬底中的掺杂区的顶表面比栅极结构下的衬底表面低一个距离，并且距离大于300。

    TRANSMISSION CABLE CAPABLE OF TRANSMITTING E-SATA SIGNALS AND ELECTRICITY
    22.
    发明申请
    TRANSMISSION CABLE CAPABLE OF TRANSMITTING E-SATA SIGNALS AND ELECTRICITY 审中-公开
    传输E-SATA信号和电力的传输电缆

    公开(公告)号：US20090094394A1

    公开(公告)日：2009-04-09

    申请号：US12019641

    申请日：2008-01-25

    Applicant: Chien-Te Wu ,  Chia-Fu Chan ,  Yu-Lin Liu

    Inventor： Chien-Te Wu ,  Chia-Fu Chan ,  Yu-Lin Liu

    IPC: G06F13/12

    CPC classification number: H01R31/005 ,  H01R27/02

    Abstract: A transmission cable includes a first plug including a housing. A slot is formed inside the housing. The first plug further includes an E-SATA terminal set disposed on a side of the slot for transmitting E-SATA signals, and a power terminal set disposed on the other side of the slot for receiving electricity. The transmission cable further includes an E-SATA signal line electrically connected to the E-SATA terminal set for transmitting the E-SATA signals, a second plug connected to the E-SATA signal line for inserting into a signal receptacle of a E-SATA peripheral device, a power line electrically connected to the power terminal set for transmitting the electricity, and a third plug connected to the power line for inserting into a power receptacle of the E-SATA peripheral device so as to transmit the electricity to the E-SATA peripheral device.

    Abstract translation: 传输电缆包括包括壳体的第一插头。 在壳体内部形成槽。 第一插头还包括设置在插槽侧的用于发送E-SATA信号的E-SATA终端机，以及设置在用于接收电力的槽的另一侧的电源终端机。 传输电缆还包括电连接到用于传输E-SATA信号的E-SATA终端机的E-SATA信号线，连接到E-S​​ATA信号线的第二插头，用于插入E-SATA的信号插座 外围设备，电连接到用于传输电力的电源端子组的电力线;以及连接到电力线的第三插头，用于插入到E-SATA外围设备的电源插座中，以将电力发送到E- SATA外围设备。

    An Apparatus and Associated Method for Making a Floating Gate Cell in a Virtual Ground Array
    23.
    发明申请
    An Apparatus and Associated Method for Making a Floating Gate Cell in a Virtual Ground Array 有权
    一种用于在虚拟地阵列中制造浮动栅极电池的装置和相关方法

    公开(公告)号：US20070284644A1

    公开(公告)日：2007-12-13

    申请号：US11423842

    申请日：2006-06-13

    Applicant: Chen-Chin Liu ,  Chun-Pei Wu ,  Ta-Kang Chu ,  Yao-Fu Chan

    Inventor： Chen-Chin Liu ,  Chun-Pei Wu ,  Ta-Kang Chu ,  Yao-Fu Chan

    IPC: H01L29/76

    CPC classification number: H01L29/4234 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11531 ,  H01L29/42324

    Abstract: A method for fabricating a floating gate memory device comprises using thin buried diffusion regions with increased encroachment by a buried diffusion oxide layer into the buried diffusion layer and underneath the tunnel oxide under the floating gate. Further, the floating gate polysilicon layer has a eight than the buried diffusion height. The increased step height of the gate polysilicon layer to the buried diffusion layer, and the increased encroachment of the buried diffusion oxide, can produce a higher GCR, while still allowing decreased cell size using a virtual ground array design.

    Abstract translation: 一种用于制造浮动栅极存储器件的方法，包括使用较薄的掩埋扩散区，其中埋入扩散氧化物层的埋入扩大到掩埋扩散层内并在浮动栅极下方的隧道氧化物下面。 此外，浮栅多晶硅层的掩埋扩散高度为8。 栅极多晶硅层对掩埋扩散层的阶梯高度增加以及掩埋扩散氧化物的侵蚀增加，可以产生较高的GCR，同时仍然允许使用虚拟接地阵列设计减小电池尺寸。

    Running ramdisk-based Microsoft Windows 95/98/ME
    24.
    发明授权
    Running ramdisk-based Microsoft Windows 95/98/ME 失效
    运行基于ramdisk的Microsoft Windows 95/98 / ME

    公开(公告)号：US07181738B2

    公开(公告)日：2007-02-20

    申请号：US10169311

    申请日：2000-12-27

    Applicant: Kam-fu Chan

    Inventor： Kam-fu Chan

    IPC: G06F9/44 ,  G06F9/00

    CPC classification number: G06F9/4406 ,  G06F3/0607 ,  G06F3/0632 ,  G06F3/0679

    Abstract: A method, resulting in producing a customized running image of files, is provided for running, through customized booting process. Microsoft Windows 95/98/ME on ramdisk in protected WINDOWS mode with additional advantages of either freedom of choice of access to non-volatile rewriteable storage medium or flexibility of preserving user configuration in User Drive(s). The method and the booting process include the steps of producing a customized copy of configuration files used by Microsoft Windows 95/98/ME; copying these configuration files, system files provided by Microsoft for setting up Windows 95/98/ME, other device drivers and programs to storage medium/media to be used in computer system(s) or device(s) capable of running Microsoft Windows 95/98/ME; and with the use of these files from the storage medium/media, booting up in real DOS mode, preparing for and running off Microsoft Windows 95/98/ME on ramdisk in protected WINDOWS mode in the computer system(s) or device(s).

    Abstract translation: 通过定制启动过程，提供了一种导致生成定制的文件运行映像的方法。 Microsoft Windows 95/98 / ME在受保护的WINDOWS模式下的ramdisk，具有选择访问非易失性可重写存储介质的自由或者在用户驱动器中保留用户配置的灵活性的额外优点。 该方法和引导过程包括生成Microsoft Windows 95/98 / ME使用的配置文件的自定义副本的步骤; 复制这些配置文件，Microsoft提供的用于设置Windows 95/98 / ME，其他设备驱动程序和程序的系统文件，用于能够运行Microsoft Windows 95的计算机系统或设备中的存储介质/介质 / 98 / ME; 并且使用存储介质/介质中的这些文件，以真正的DOS模式启动，准备并运行在计算机系统或设备（s）的受保护的WINDOWS模式下的RAM上的Microsoft Windows 95/98 / ME ）。

    DIGITAL LENSING
    27.
    发明申请
    DIGITAL LENSING 审中-公开

    公开(公告)号：US20200151051A1

    公开(公告)日：2020-05-14

    申请号：US16631081

    申请日：2018-07-24

    Applicant: Kam Fu Chan

    Inventor： Kam Fu Chan

    IPC: G06F11/10 ,  H03M7/30

    Abstract: A method, and the associated design, schema and techniques for processing digital data, whether random or not, through encoding and decoding losslessly and correctly for purposes of encryption/decryption or compression/decompression or both, including the use of Digital Lensing, Unlimited Code System, and other associated techniques. There is no assumption of or requirement for the digital information to be processed before processing.

    Cathode coating
    28.
    发明授权
    Cathode coating 有权
    阴极涂层

    公开(公告)号：US09252383B2

    公开(公告)日：2016-02-02

    申请号：US12309575

    申请日：2007-07-26

    Applicant: Subramaniam Ganeshamurugan ,  Poopathy Kathirgamanathan ,  Sivagnanasundram Surendrakumar ,  Seenivasagam Ravichandran ,  Yun Fu Chan

    Inventor： Subramaniam Ganeshamurugan ,  Poopathy Kathirgamanathan ,  Sivagnanasundram Surendrakumar ,  Seenivasagam Ravichandran ,  Yun Fu Chan

    IPC: H01L51/54 ,  H01L51/50 ,  H01L51/00

    CPC classification number: H01L51/5092 ,  H01L51/0077 ,  H01L51/009 ,  H01L51/5088

    Abstract: Electroluminescent devices are disclosed comprising a transparent anode; a layer of a hole transporting material; a layer of an electroluminescent material; a layer of an electron transporting material; a layer of a substituted lithium quinolate; and a metal cathode. The electroluminescent device may be an organic light-emitting diode having a cathode, an electron injection layer in contact with the cathode and an electron transport layer in contact with the electron injection layer and comprising aluminum, zirconium or hafnium quinolate or a mixture thereof or a mixture of any of them with a quinolate of a metal of group 1, 2, 3, 13 or 14 of the periodic table. Such devices may be made by the steps of forming a substituted lithium quinolate having one or more substituents and depositing the substituted lithium quinolate on a cathode of the device to provide an electron injection layer.

    Abstract translation: 公开了包含透明阳极的电致发光器件; 一层空穴传输材料; 一层电致发光材料; 一层电子传输材料; 一层取代的喹啉锂; 和金属阴极。 电致发光器件可以是具有阴极，与阴极接触的电子注入层和与电子注入层接触的电子传输层的有机发光二极管，该电子传输层包含铝，锆或喹铪钛酸盐或其混合物或 它们中的任何一种的混合物与周期表第1,2,3,3或14族金属的喹啉酸盐。 这样的装置可以通过以下步骤制成：形成具有一个或多个取代基的取代的喹啉酸锂，并将取代的喹啉酸锂沉积在该器件的阴极上以提供电子注入层。

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