PLANAR HIGH VOLTAGE TRANSFORMER
    191.
    发明申请
    PLANAR HIGH VOLTAGE TRANSFORMER 审中-公开
    空值

    公开(公告)号:US20140144245A1

    公开(公告)日:2014-05-29

    申请号:US14082539

    申请日:2013-11-18

    CPC classification number: G01L1/005 G01L1/205 H01F27/42

    Abstract: A curved surface shaped membrane pressure sensor for a moving member and the method for manufacturing the same, the sensor comprising an elastic curved plate and a subtype grid membrane switch formed on the curved plate, wherein the membrane switch is coupled to a cutting board shell of the moving member on one side opposed to the curved plate, and the subtype grid membrane switch is used for sensing the presence of pressure on the curved plate. The curved surface shaped membrane pressure sensor according to the present invention can not only meet the requirements on appearance of the moving member, but also effectively sense the touching to prevent injury on the object being detected, and additionally can effectively achieving the effects of fireproofing and waterproofing.

    Abstract translation: 一种用于移动构件的弯曲表面形状的膜压力传感器及其制造方法,该传感器包括形成在弯曲板上的弹性弯曲板和亚型栅格膜开关,其中薄膜开关连接到切割板壳 在与弯曲板相对的一侧的移动构件,以及亚型网格膜开关用于感测弯曲板上的压力的存在。 根据本发明的曲面形状的压力传感器不仅可以满足移动部件的外观要求,而且可以有效地感测触摸以防止对被检测物体的伤害,并且还可以有效地实现防火效果, 防水。

    INPUT DETECTING APPARATUS, AND ASSOCIATED METHOD, FOR ELECTRONIC DEVICE
    192.
    发明申请
    INPUT DETECTING APPARATUS, AND ASSOCIATED METHOD, FOR ELECTRONIC DEVICE 有权
    输入检测装置及相关方法,用于电子设备

    公开(公告)号:US20130276550A1

    公开(公告)日:2013-10-24

    申请号:US13926019

    申请日:2013-06-25

    CPC classification number: G01L1/005 G06F3/0414 G06F3/0416 G06F3/0418

    Abstract: An apparatus, and an associated method, forms a user interface permitting input of input instructions to an electronic device. Input commands are evidence by tactile input forces applied to a force receiving surface. Force sensing elements are positioned to sense indications of the tactile input force. The force sensing element is caused to exhibit a selected input parameter value through application of a selected force thereto by application of a tightening torque to a fastener positioned in proximity to the force sensing element.

    Abstract translation: 装置和相关联的方法形成允许输入指令到电子设备的用户界面。 输入命令是施加到力接收表面的触觉输入力的证据。 力感测元件被定位成感测触觉输入力的指示。 力感测元件通过对紧固力矩施加到位于力感测元件附近的紧固件而通过施加选定的力而被显示出选定的输入参数值。

    MICRO/NANO-MECHANICAL TEST SYSTEM EMPLOYING TENSILE TEST HOLDER WITH PUSH-TO-PULL TRANSFORMER
    193.
    发明申请
    MICRO/NANO-MECHANICAL TEST SYSTEM EMPLOYING TENSILE TEST HOLDER WITH PUSH-TO-PULL TRANSFORMER 有权
    微型/纳米机械测试系统采用推拉变压器的拉伸测试台

    公开(公告)号:US20130247682A1

    公开(公告)日:2013-09-26

    申请号:US13888959

    申请日:2013-05-07

    Applicant: Hysitron Inc.

    Abstract: A micromachined or microelectromechanical system (MEMS) based push-to-pull mechanical transformer for tensile testing of micro-to-nanometer scale material samples including a first structure and a second structure. The second structure is coupled to the first structure by at least one flexible element that enables the second structure to be moveable relative to the first structure, wherein the second structure is disposed relative to the first structure so as to form a pulling gap between the first and second structures such that when an external pushing force is applied to and pushes the second structure in a tensile extension direction a width of the pulling gap increases so as to apply a tensile force to a test sample mounted across the pulling gap between a first sample mounting area on the first structure and a second sample mounting area on the second structure.

    Abstract translation: 一种用于对包括第一结构和第二结构的微米至纳米尺度材料样品的拉伸测试的基于微机械或微机电系统(MEMS)的推挽式机械变压器。 第二结构通过至少一个可使第二结构相对于第一结构运动的柔性元件耦合到第一结构,其中第二结构相对于第一结构设置,以便在第一结构之间形成牵引间隙 以及第二结构,使得当在拉伸延伸方向上施加外推力并推动所述第二结构时,所述牵引间隙的宽度增加,以便对安装在所述牵引间隙上的第一样品 第一结构上的安装区域和第二结构上的第二样品安装区域。

    SURFACE-MOUNTED MONITORING SYSTEM
    195.
    发明申请
    SURFACE-MOUNTED MONITORING SYSTEM 有权
    表面安装监控系统

    公开(公告)号:US20130197825A1

    公开(公告)日:2013-08-01

    申请号:US13642785

    申请日:2011-04-22

    CPC classification number: G01L1/005 G01M5/0025 G01M5/0041

    Abstract: A surface mounted monitoring system is disclosed that is useful for detecting the presence of both ordinary and excessive loads on a surface, and for providing real-time or near real-time trending data. The system includes an array of force transducers disposed on the exterior surface of a structural member such as a roof. In an exemplary embodiment, transducers may be placed on an interior surface, such as embedded within insulation. The force transducers detect the magnitude of a load force acting on the surface. A data analysis module (DAM) may record force readings in a circular memory buffer, so that recent data can be recovered in the event of a catastrophic collapse. The DAM may also communicate with a monitoring device that can display real-time loading data to a user and perform other analysis.

    Abstract translation: 公开了一种表面安装的监视系统,其用于检测表面上的普通和过载的存在以及用于提供实时或接近实时的趋势数据。 该系统包括设置在诸如屋顶的结构构件的外表面上的力传感器阵列。 在示例性实施例中,换能器可以放置在内表面上,例如嵌入绝缘体内。 力传感器检测作用在表面上的载荷力的大小。 数据分析模块(DAM)可以在循环存储缓冲区中记录力读数,以便在发生灾难性崩溃时可以恢复最近的数据。 DAM还可以与可以向用户显示实时加载数据并执行其他分析的监视设备进行通信。

    Pressure detector and pressure detector array
    196.
    发明授权
    Pressure detector and pressure detector array 有权
    压力检测器和压力检测器阵列

    公开(公告)号:US08258554B2

    公开(公告)日:2012-09-04

    申请号:US12785998

    申请日:2010-05-24

    CPC classification number: G01L1/005 H01L51/057

    Abstract: A pressure detector is disclosed having an organic transistor, a pressure-detecting layer and a first electrode. The organic transistor includes an emitter, an organic layer, a grid formed with holes, and a collector, the organic layer being sandwiched between the emitter and the collector. The pressure-detecting layer is formed on the organic transistor such that the collector is sandwiched between the organic layer and the pressure-detecting layer. The first electrode is formed on the pressure-detecting layer such that the pressure-detecting layer is sandwiched between the collector and the first electrode. The area of the active region of the pressure detector is determined by the overlapped area of the electrodes, thereby reducing the pitch of the electrodes and thus the size of the pressure detector.

    Abstract translation: 公开了一种具有有机晶体管,压力检测层和第一电极的压力检测器。 有机晶体管包括发射极,有机层,形成有孔的栅极和集电极,有机层夹在发射极和集电极之间。 压力检测层形成在有机晶体管上,使得集电体夹在有机层和压力检测层之间。 第一电极形成在压力检测层上,使得压力检测层夹在集电体和第一电极之间。 压力检测器的有源区域的面积由电极的重叠面积确定,从而减小电极的间距,从而减小压力检测器的尺寸。

    SENSOR USING FERROELECTRIC FIELD-EFFECT TRANSISTOR
    197.
    发明申请
    SENSOR USING FERROELECTRIC FIELD-EFFECT TRANSISTOR 审中-公开
    传感器使用电磁场效应晶体管

    公开(公告)号:US20110309415A1

    公开(公告)日:2011-12-22

    申请号:US12818999

    申请日:2010-06-18

    Abstract: An embodiment is a method and apparatus to sense strain or pressure. A ferroelectric field effect transistor (feFET) structure has a semiconductor layer and a ferroelectric dielectric layer. The feFET structure is capable of sensing strain or pressure.One disclosed feature of the embodiments is a method to fabricate a strain or pressure sensor. A circuit is printed to form a ferroelectric field effect transistor (feFET) structure having a ferroelectric dielectric layer and a semiconductor layer. The feFET structure is capable of sensing strain or pressure.

    Abstract translation: 一个实施例是用于检测应变或压力的方法和装置。 铁电场效应晶体管(feFET)结构具有半导体层和铁电介质层。 feFET结构能够感测应变或压力。 实施例的一个公开的特征是制造应变或压力传感器的方法。 打印电路以形成具有铁电介质层和半导体层的铁电场效应晶体管(feFET)结构。 feFET结构能够感测应变或压力。

    Pressure sensor with integrated thermal stabilization and method of using
    199.
    发明授权
    Pressure sensor with integrated thermal stabilization and method of using 有权
    具有集成热稳定性的压力传感器和使用方法

    公开(公告)号:US08006564B1

    公开(公告)日:2011-08-30

    申请号:US12539358

    申请日:2009-08-11

    CPC classification number: F02C9/28 F02D41/3005 F23N5/022 G01B5/30 G01L1/005

    Abstract: The present invention relates to a method of determining both pressures and temperatures in a high temperature environment. The present invention also relates to a method of determining temperatures about a pressure-sensing element using a bi-functional heater. In addition, the present invention preferably relates to a pressure sensor with the pressure-sensing element and a heating element both integrated into the sensor's packaging, preferably onto the diaphragm of the pressure sensor, and particularly to such a pressure sensor capable of operating at high or elevated temperatures, and even more particularly to such a pressure sensor wherein the heating element is capable of both heating, at least in part, the pressure-sensing element and monitoring the temperature of the application area. Preferably, the pressure-sensing element is formed from shape memory alloy (SMA) materials that can be used at high or elevated temperatures as a pressure sensor with high sensitivity.

    Abstract translation: 本发明涉及在高温环境下测定压力和温度的方法。 本发明还涉及使用双功能加热器来确定关于压力感测元件的温度的方法。 此外,本发明优选地涉及具有压力感测元件和加热元件的压力传感器,两者都集成到传感器的包装中,优选地在压力传感器的隔膜上,特别是涉及能够在高压下操作的压力传感器 或升高的温度,并且甚至更具体地涉及这种压力传感器,其中加热元件能够至少部分地加热压力感测元件并监测施加区域的温度。 优选地,压力感测元件由形状记忆合金(SMA)材料形成,其可以在高或高温下用作具有高灵敏度的压力传感器。

    THIN-FILM TRANSISTOR BASED PIEZOELECTRIC STRAIN SENSOR AND METHOD
    200.
    发明申请
    THIN-FILM TRANSISTOR BASED PIEZOELECTRIC STRAIN SENSOR AND METHOD 有权
    基于薄膜晶体管的压电应变传感器及方法

    公开(公告)号:US20110049579A1

    公开(公告)日:2011-03-03

    申请号:US12842298

    申请日:2010-07-23

    Abstract: A piezoelectric strain sensor and method thereof for detecting strain, vibration, and/or pressure. The sensor incorporates a sequence of piezoelectric and semiconductor layers in a thin-film transistor structure. The thin-film transistor structure can be configured on a flexible substrate via a low-cost fabrication technique. The piezoelectric layer generates an electric charge resulting in a modulation of a transistor current, which is a measure of external strain. The sensor can be formed as a single gate field-effect piezoelectric sensor and a dual gate field-effect piezoelectric sensor. The semiconductor layer can be configured from a nanowire array resulting in a metal-piezoelectric-nanowire field effect transistor. The single and dual gate field-effect piezoelectric sensor offer increased sensitivity and device control due to the presence of the piezoelectric layer in the transistor structure and low cost manufacturability on large area flexible substrates.

    Abstract translation: 一种用于检测应变,振动和/或压力的压电应变传感器及其方法。 传感器在薄膜晶体管结构中包含一系列压电和半导体层。 薄膜晶体管结构可以通过低成本制造技术配置在柔性基板上。 压电层产生电荷,导致晶体管电流的调制,这是外部应变的量度。 传感器可以形成为单栅场效应压电传感器和双栅场效应压电传感器。 半导体层可以由纳米线阵列构成,形成金属压电纳米线场效应晶体管。 由于晶体管结构中存在压电层并且在大面积柔性基板上具有低成本可制造性,单栅双极场效应压电传感器提供增加的灵敏度和器件控制。

Patent Agency Ranking