Invention Grant
- Patent Title: Pressure detector and pressure detector array
- Patent Title (中): 压力检测器和压力检测器阵列
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Application No.: US12785998Application Date: 2010-05-24
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Publication No.: US08258554B2Publication Date: 2012-09-04
- Inventor: Hsin- Fei Meng , Sheng-Fu Horng , Yu-Chiang Chao , Chun-Yu Chen , Wei-Jen Lai
- Applicant: Hsin- Fei Meng , Sheng-Fu Horng , Yu-Chiang Chao , Chun-Yu Chen , Wei-Jen Lai
- Applicant Address: TW Hsinchu
- Assignee: National Chiao Tung University
- Current Assignee: National Chiao Tung University
- Current Assignee Address: TW Hsinchu
- Agency: Edwards Wildman Palmer LLP
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW98138016A 20091110; TW98146231A 20091231
- Main IPC: H01L29/84
- IPC: H01L29/84

Abstract:
A pressure detector is disclosed having an organic transistor, a pressure-detecting layer and a first electrode. The organic transistor includes an emitter, an organic layer, a grid formed with holes, and a collector, the organic layer being sandwiched between the emitter and the collector. The pressure-detecting layer is formed on the organic transistor such that the collector is sandwiched between the organic layer and the pressure-detecting layer. The first electrode is formed on the pressure-detecting layer such that the pressure-detecting layer is sandwiched between the collector and the first electrode. The area of the active region of the pressure detector is determined by the overlapped area of the electrodes, thereby reducing the pitch of the electrodes and thus the size of the pressure detector.
Public/Granted literature
- US20110108936A1 PRESSURE DETECTOR AND PRESSURE DETECTOR ARRAY Public/Granted day:2011-05-12
Information query
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