公开(公告)号：US3639770A

公开(公告)日：1972-02-01

申请号：US3639770D

申请日：1968-09-23

Applicant: TELEFUNKEN PATENT

Inventor： ZIZELMANN WALTER

IPC: G01F23/292 ,  G01N21/43 ,  G01N21/26 ,  G01N21/46 ,  G02B21/00 ,  H01J39/02

CPC classification number: G01F23/2925 ,  G01N21/43

Abstract: An optoelectronic or photosensitive semiconductor device in which a light-emitting element and a light-responsive element are arranged in a common casing, the degree of photocoupling between the two elements being dependent entirely on conditions exterior of the casing. In one embodiment, the two elements are embedded in a light-permeable mass, the boundary surface of which, together with a medium surrounding the mass, forms a surface whose reflection characteristic is dependent on the indices of refraction of the mass and of the medium, the elements themselves being so arranged that when the index of refraction of the medium is such that the boundary reflects the light coming from the light-emitting element, the reflected light is picked up by the light-responsive element, with the amount of light being picked up being dependent on, and thus an indication of, the medium surrounding the mass. In another embodiment, light emitted by the light-emitting element is free to exit the mass and, if reflected by an object outside the mass, is picked up by the lightresponsive element.

Abstract translation: 其中发光元件和光响应元件布置在公共壳体中的光电子或光敏半导体器件，两个元件之间的光耦合程度完全取决于壳体外部的条件。 在一个实施例中，两个元件被嵌入在透光质量块中，其透明质量块的边界表面与围绕物质的介质一起形成反射特性取决于质量和介质的折射率的表面 元件本身被布置成使得当介质的折射率使得边界反射来自发光元件的光时，反射光被光响应元件拾取，具有光量 被拾取依赖于，并且因此指示围绕质量的介质。 在另一个实施例中，由发光元件发射的光自由地离开质量块，并且如果被质量外的物体反射，则由光响应元件拾取。

公开(公告)号：US3603832A

公开(公告)日：1971-09-07

申请号：US3603832D

申请日：1968-11-22

Applicant: PHILIPS CORP

Inventor： MANLEY BRIAN WILLAIM ,  SCHAGEN PIETER ,  ADAMS JOHN

IPC: H01J31/50 ,  H01J43/24 ,  H01J39/02 ,  H01J39/04

CPC classification number: H01J43/24 ,  H01J31/507

Abstract: An electronic image intensifier including an electron multiplier. The device comprises a photocathode, a fluorescent screen, and a body between and spaced from the photocathode and screen. The body is provided with a plurality of elongated, longitudinal passageways, the walls of which are secondary emissive. Electrodes are provided on opposite surfaces bounding the channels and an electrically conductive electron-permeable membrane covering the entrance to each passageway.

公开(公告)号：US3573533A

公开(公告)日：1971-04-06

申请号：US3573533D

申请日：1968-11-12

Applicant: HUGHES AIRCRAFT CO

Inventor： GRONLUND BENT

IPC: H01J29/48 ,  H01J29/82 ,  H01J1/96 ,  H01J19/50 ,  H01J39/02

CPC classification number: H01J29/82 ,  H01J29/485

Abstract: Several embodiments of a novel electron-gun-supporting arrangement are illustrated. Generically, the gun-support arrangements provide for openings in an elongated cylinder which houses various aspects of the electron gun. Spring metal elements secured to the inner surface of the cylinder have upraised deformations to project through the holes in this cylinder and engage the inner surface of an elongated glass tube or neck portion which houses the electron gun in conventional cathoderay-type tubes.

公开(公告)号：US3475608A

公开(公告)日：1969-10-28

申请号：US3475608D

申请日：1967-11-02

Applicant: US ARMY

Inventor： PARDES HERMAN I

IPC: G01S11/12 ,  G08B13/194 ,  H04N3/09 ,  H04N5/33 ,  H01J39/02

CPC classification number: G08B13/194 ,  G01S11/12 ,  H04N3/09 ,  H04N5/33 ,  Y10S250/01

公开(公告)号：US4178528A

公开(公告)日：1979-12-11

申请号：US922015

申请日：1978-07-05

Applicant: Andrew J. Kennedy

Inventor： Andrew J. Kennedy

IPC: H01J40/16 ,  H01J39/02 ,  H01J39/14

CPC classification number: H01J40/16

Abstract: A unitube that is used in intensified charge transfer devices (ICTDs) hav a semiconductor charge transfer device in proximity focus with the photocathode. The unitube is comprised of a tube base section having a centrally raised portion where the charge transfer device (CTD) is internally mounted directly thereon and of an external open space for the mounting of a thermoelectric (TE) cooler for cooling the semiconductor CTD.The CTD has a grounded metal shield overlapping its outer portion to avoid high voltage break down in the area between the high voltage photocathode and the CTD. The base may be brazed to one end of the image intensifier tube wall by a Kovar ring. The faceplate may be attached to the other end of the image intensifier by a blunt or knife edge type indium seal.

Abstract translation: 用于具有与光电阴极接近的半导体电荷转移装置的强化电荷转移装置（ICTD）中的单元管。 单元管由具有中央凸起部分的管状基部构成，其中电荷转移装置（CTD）直接内部安装在其上，并具有用于安装用于冷却半导体CTD的热电（TE）冷却器的外部开放空间。 CTD具有与其外部部分重叠的接地金属屏蔽，以避免在高压光电阴极和CTD之间的区域内的高压分解。 可以通过Kovar环将基底钎焊到图像增强管壁的一端。 面板可以通过钝刀或刀刃型铟密封件附接到图像增强器的另一端。

公开(公告)号：US4147950A

公开(公告)日：1979-04-03

申请号：US784207

申请日：1977-04-04

Applicant: James R. Caraher ,  William M. Rappoport ,  Donald F. DeCou ,  William C. Deits

Inventor： James R. Caraher ,  William M. Rappoport ,  Donald F. DeCou ,  William C. Deits

IPC: H01J9/22 ,  H01J1/54 ,  H01J9/12 ,  H01J9/233 ,  H01J29/38 ,  H01J31/50 ,  H01J61/24 ,  H01J39/02 ,  H01J61/28

CPC classification number: H01J9/12 ,  H01J1/54 ,  H01J29/38 ,  H01J31/501

Abstract: An image intensifier tube comprising a sealed envelope having therein means for controllably liberating oxygen within the envelope, and an input screen including an oxygen conditioned layer of fluorescent material and an overlying layer of photoemissive material which may be oxidized to improve the photon-to-electron conversion efficiency of the input screen.A method of improving the conversion efficiency of an image intensifier tube input screen including the steps of exposing a layer of fluorescent material to oxygen prior to the deposition of an overlying layer of photoemissive material, and subsequently exposing the layer of photoemissive material to oxygen, if desired, after the tube envelope has been sealed.

Abstract translation: 一种图像增强管，其包括密封外壳，其中具有用于可控地释放外壳内的氧气的装置，以及包括荧光材料的氧调节层和可被氧化以改善光子到电子的上覆层的输入屏幕 输入屏幕的转换效率。

公开(公告)号：US4125793A

公开(公告)日：1978-11-14

申请号：US764649

申请日：1977-02-01

Applicant: Hans Timan

Inventor： Hans Timan

IPC: H01J1/88 ,  H01J40/02 ,  H01J43/18 ,  H01J39/02

CPC classification number: H01J43/18 ,  H01J1/88 ,  H01J40/02

Abstract: A photomultiplier tube in which the anode, which is positioned adjacent to the last dynode, is not supported by the side supports which support the dynodes as was done in the prior art, but is supported by the stem. Thus, the anode "floats" with respect to the side supports and with respect to the dynodes which are rigidly attached to the side support. An advantage of this structure is improved electrical properties, e.g., a reduction in dark current, improved signal to noise ratio and reduction in hysteresis. The floating anode is particularly applicable to box and grid type of dynode structures used in small diameter, e.g., one-half and three-fourth inch tubes.

Abstract translation: 一个光电倍增管，其中与最后一个倍增电极相邻定位的阳极不支持像现有技术中那样支撑倍增极的侧支撑，而是被该杆支撑。 因此，阳极相对于侧支撑件和相对于刚性地附接到侧支撑件的倍增电极“浮动”。 这种结构的优点是改善的电性能，例如暗电流的降低，改善的信噪比和减小滞后。 浮动阳极特别适用于小直径（例如1/2和3/4英寸）管中使用的盒式和栅格式的倍增极结构。

公开(公告)号：US4117366A

公开(公告)日：1978-09-26

申请号：US519218

申请日：1974-10-30

Applicant: Gordon Peter Davis

Inventor： Gordon Peter Davis

IPC: B31B1/90 ,  B65H39/14 ,  H01J40/00 ,  H01J43/04 ,  H01J43/28 ,  H01J39/00 ,  H01J39/02

CPC classification number: H01J43/28 ,  H01J43/045

Abstract: A multi-channel photomultiplier tube in which light radiation from distinct sources passes through an entrance window to a photo-cathode, the window being divided into parts so that light from a source passes through a respective part to an associated part of the photo-cathode, the division of the window into parts constraining the light from incidence upon other parts of the photo-cathode.

公开(公告)号：US3989971A

公开(公告)日：1976-11-02

申请号：US518859

申请日：1974-10-29

Applicant: Vincent J. Santilli ,  James Vine

Inventor： Vincent J. Santilli ,  James Vine

IPC: H01J31/50 ,  H01J39/04 ,  H01J39/02

CPC classification number: H01J31/502

Abstract: An electron image intensifier includes an input image means having a curved photocathode surface for converting the optical image to an electron image. The electron image is imaged upon an output image means spaced from the input image means, with an annular accelerating anode positioned between for accelerating the electrons to produce the image intensification. An annular gateable electrode is disposed between the input image means and the accelerating anode. The gateable electrode is structured and positioned with an inwardly disposed end portion closely spaced from the perimeter edge of the photocathode surface, and extending along the radius of curvature of the photocathode surface. The structure substantially eliminates any distortion from the gating electrode.

Abstract translation: 电子图像增强器包括具有用于将光学图像转换成电子图像的弯曲光电阴极表面的输入图像装置。 电子图像在与输入图像装置间隔开的输出图像装置上成像，其中环形加速阳极位于两个之间，用于加速电子以产生图像增强。 环形可选择电极设置在输入图像装置和加速阳极之间。 可栅极电极被构造和定位成具有与光电阴极表面的周边边缘紧密间隔开的向内设置的端部，并且沿着光电阴极表面的曲率半径延伸。 该结构基本上消除了来自门电极的任何变形。

公开(公告)号：US3980915A

公开(公告)日：1976-09-14

申请号：US446185

申请日：1974-02-27

Applicant: Richard A. Chapman ,  Milo R. Johnson ,  Henry B. Morris

Inventor： Richard A. Chapman ,  Milo R. Johnson ,  Henry B. Morris

IPC: H01L27/146 ,  H01L31/032 ,  H01L31/108 ,  H01J39/02 ,  H01J29/45

CPC classification number: H01L27/14649 ,  H01L31/0324 ,  H01L31/108 ,  H01L2224/48463 ,  H01L2924/12032

Abstract: This disclosure is directed to a photovoltaic detector having specific response to the infrared range, wherein the detector comprises a metal-semiconductor diode having a semi-transparent electrode and disposed on a specially prepared substrate of a narrow band gap semiconductor material or on an epitaxial layer or evaporated film of such material provided on a substrate. In a specific example, the narrow band gap semiconductor material of the substrate is specially prepared (Pb,Sn)Te or an epitaxial layer or evaporated film of (Pb,Sn)Te on a (Pb,Sn)Te substrate. The detected radiation is transmitted through the semi-transparent electrode on top of the photovoltaic detector.

Abstract translation: 本公开涉及具有对红外范围的特定响应的光电检测器，其中检测器包括具有半透明电极并设置在特别制备的窄带隙半导体材料的衬底上或在外延层上的金属半导体二极管 或设置在基板上的这种材料的蒸发膜。 在具体的例子中，在（Pb，Sn）Te衬底上特别制备（Pb，Sn）Te或（Pb，Sn）Te的外延层或蒸发膜的衬底的窄带隙半导体材料。 检测到的辐射透过光电探测器顶部的半透明电极。