Method and system for icosaborane implantation
    11.
    发明申请
    Method and system for icosaborane implantation 失效
    二十硼烷植入的方法和系统

    公开(公告)号:US20020074521A1

    公开(公告)日:2002-06-20

    申请号:US09738486

    申请日:2000-12-15

    Abstract: A method of implanting ionized icosaborane (B20HX), triantaborane (B30HX), and sarantaborane (B40HX) into a workpiece is provided, comprising the steps of (i) vaporizing and ionizing decaborane in an ion source (50) to create a plasma; (ii) extracting ionized icosaborane, triantaborane, and sarantaborane (collectively nullhigher order boranesnull) within the plasma through a source aperture (126) to form an ion beam; (iii) mass analyzing the ion beam with a mass analysis magnet (127) to permit ionized icosaborane (B20HXnull) or one of the other higher order boranes to pass therethrough; and (iv) implanting the ionized icosaborane (B20HXnull) or one of the other higher order boranes into a workpiece. The step of vaporizing and ionizing the decaborane comprises the substeps of (i) vaporizing decaborane in a vaporizer (51) and (ii) ionizing the vaporized decaborane in an ionizer (53).

    Abstract translation: 提供了将离子化的二十硼烷(B20HX),三蒽硼烷(B30HX)和四氮芥(B40HX))植入工件中的方法,包括以下步骤:(i)在离子源(50)中蒸发和离子化十硼烷以产生等离子体; (ii)通过源孔径(126)在等离子体内提取离子化的二十硼烷,三蒽硼烷和梧桐烷(统称为“高级硼烷”)以形成离子束; (iii)用质量分析磁体(127)对离子束进行质量分析,以允许电离的二十硼烷(B20HX +)或其它高级硼烷中的一个通过; 和(iv)将离子化的二十硼烷(B20HX +)或其它高阶硼烷中的一种植入工件中。 蒸发和电离十硼烷的步骤包括以下步骤:(i)蒸发器(51)中蒸发十硼烷,和(ii)在电离器(53)中电离蒸发的十硼烷。

    Electron beam photolithographic process
    12.
    发明申请
    Electron beam photolithographic process 有权
    电子束光刻工艺

    公开(公告)号:US20020063222A1

    公开(公告)日:2002-05-30

    申请号:US09734240

    申请日:2000-12-05

    Abstract: An electron beam photolithographic process for patterning an insulation layer over a substrate. A conductive photoresist layer having a conjugate structure is formed over the insulation layer. An electron beam photolithographic process is conducted using a photomask so that the pattern on the photomask is transferred to the conductive photoresist layer.

    Abstract translation: 一种用于在衬底上图形化绝缘层的电子束光刻工艺。 在绝缘层上形成具有共轭结构的导电光致抗蚀剂层。 使用光掩模进行电子束光刻工艺,使得光掩模上的图案被转印到导电光致抗蚀剂层。

    Method and apparatus for testing a substrate
    13.
    发明申请
    Method and apparatus for testing a substrate 失效
    用于测试衬底的方法和装置

    公开(公告)号:US20020024023A1

    公开(公告)日:2002-02-28

    申请号:US09977549

    申请日:2001-10-15

    CPC classification number: H01J37/244 H01J37/28

    Abstract: The invention relates to a method and to apparatus for testing a substrate, in which a particle beam is directed onto the substrate and emitted secondary particles are detected with a detector and then evaluated. According to the invention the location of the secondary particles emitted on the substrate relative to the position of the detector is taken into consideration during testing.

    Abstract translation: 本发明涉及一种用于测试基板的方法和装置,其中将粒子束引导到基板上,并且用检测器检测发射的次级颗粒,然后进行评估。 根据本发明,在测试期间考虑了在基板上发射的次级颗粒相对于检测器位置的位置。

    Charged particle beam irradiation apparatus and irradiation method using the apparatus
    14.
    发明申请
    Charged particle beam irradiation apparatus and irradiation method using the apparatus 失效
    带电粒子束照射装置和使用该装置的照射方法

    公开(公告)号:US20020024022A1

    公开(公告)日:2002-02-28

    申请号:US09968538

    申请日:2001-10-02

    Inventor: Kaneo Kageyama

    CPC classification number: H01J37/3045

    Abstract: A charged particle beam irradiation apparatus includes a specimen stage for holding a specimen; a specimen stage drive unit for moving the specimen stage; a detector for detecting the amount of displacement of the moved specimen stage; a charged particle beam optical unit for irradiating the specimen with a charged particle beam; an image display unit for displaying an image of the specimen, the image being formed by using charged particles or electromagnetic waves emitted from the specimen irradiated with the charged particle beam; a marker display unit for displaying a marker on each target position on an image of the specimen, on a viewscreen of the image display unit; a marker position input unit for designating reference positions on the image of the specimen; and a marker position calculation unit for calculating the position on which each marker is displayed on the image of the specimen on the viewscreen of the image display unit; wherein the position on the image of the specimen, on which each marker is to be displayed, is also moved based on both the calculated position of each marker, which has been calculated by the position calculation unit, and the amount of displacement of the moved specimen stage, the amount of displacement being detected by the detector.

    Abstract translation: 带电粒子束照射装置包括:用于保持试样的试样台; 用于移动所述标本台的标本台驱动单元; 用于检测移动的样本台的位移量的检测器; 带电粒子束光学单元,用于用带电粒子束照射样本; 图像显示单元,用于显示样本的图像,所述图像通过使用从被照射的带电粒子束照射的样本发射的带电粒子或电磁波形成; 标记显示单元,用于在图像显示单元的观看屏幕上显示在样本的图像上的每个目标位置上的标记; 标记位置输入单元,用于指定样本图像上的参考位置; 以及标记位置计算单元,用于计算在图像显示单元的观看屏幕上的样本的图像上显示每个标记的位置; 其中,基于由所述位置计算单元计算的每个标记的所计算的位置和所移动的每个标记的位移量,移动所述样本的图像上的每个标记的图像上的位置也被移动 样品台,检测器检测位移量。

    Lithographic apparatus, device manufacturing method, and device manufactured thereby
    15.
    发明申请
    Lithographic apparatus, device manufacturing method, and device manufactured thereby 有权
    平版印刷设备,器件制造方法和由此制造的器件

    公开(公告)号:US20020011573A1

    公开(公告)日:2002-01-31

    申请号:US09902490

    申请日:2001-07-11

    Abstract: A lithographic projection apparatus includes an active reflector in a radiation system providing a projection beam of radiation and/or in a projection system. The active reflector includes a body member, a reflective multilayer and at least one actuator controllable to adjust the surface figure of the reflecting multilayer, wherein the actuator exerts a substantial force component in a direction parallel to the surface figure of said reflective multilayer. The actuator may be operative to apply torques to said reflector.

    Abstract translation: 光刻投影设备包括在辐射系统中的有源反射器,该辐射系统提供辐射的投影光束和/或投影系统。 主动反射器包括主体构件,反射多层和至少一个可控制的致动器,用于调节反射多层的表面图形,其中致动器沿平行于所述反射多层的表面图形的方向施加显着的力分量。 致动器可操作以将扭矩施加到所述反射器。

    Charged-particle-beam microlithography apparatus and methods including optical corrections made during subfield exposures
    16.
    发明申请
    Charged-particle-beam microlithography apparatus and methods including optical corrections made during subfield exposures 失效
    带电粒子束微光刻设备和包括在子场曝光期间进行的光学校正的方法

    公开(公告)号:US20010052579A1

    公开(公告)日:2001-12-20

    申请号:US09805732

    申请日:2001-03-13

    Abstract: Charged-particle-beam (CPB) apparatus and methods are disclosed that achieve efficient correction of imaging conditions such as shape-astigmatic aberrations, etc., caused by differences in the distribution of pattern elements within respective subfields of the reticle. Indices based on the pattern-element distributions within subfields are stored, together with corresponding optical-correction data for the subfields. As the subfields are exposed, respective data are recalled and the exposure is performed with optical corrections made according to the data. The indices are determined beforehand from pattern data at time of reticle manufacture. The tabulated data are rewritable with changes in apparatus parameters such as beam-current density and beam-divergence angle. Intermediate data can be determined by interpolation of tabulated data.

    Abstract translation: 公开了充电粒子束(CPB)装置和方法,其实现由掩模版的各个子场内的图案元素分布的差异导致的成像条件(诸如形像像差等)的有效校正。 基于子场内的图案元素分布的指数与子场的相应光学校正数据一起被存储。 当子场曝光时,调用相应的数据,并根据数据进行光学校正来进行曝光。 这些指标是从标线制造时的图形数据预先确定的。 列表数据可以随设备参数的变化而改写,例如光束电流密度和光束发散角。 中间数据可以通过插入表格数据来确定。

    Apparatus for optically checking a pattern and method of doing the same
    17.
    发明申请
    Apparatus for optically checking a pattern and method of doing the same 审中-公开
    用于光学检查图案的方法及其做法的装置

    公开(公告)号:US20010002700A1

    公开(公告)日:2001-06-07

    申请号:US09727808

    申请日:2000-12-01

    CPC classification number: G21K5/10 G01N21/956

    Abstract: An apparatus for optically checking a pattern of a semiconductor wafer, includes (a) a laser beam source which radiate a laser beam to the pattern, (b) a beam collector which collects a laser beam reflected from the pattern, (c) a photodetector which detects a defect in a shape in the pattern, based on the laser beam collected by the beam collector, the laser beam source and the beam collector being movable together in an area above the semiconductor wafer.

    Abstract translation: 一种用于光学检查半导体晶片的图案的装置,包括:(a)向该图案辐射激光束的激光束源,(b)收集从图案反射的激光束的光束收集器,(c)光电检测器 其基于由光束收集器收集的激光束来检测图案中的形状的缺陷,激光束源和光束收集器可在半导体晶片上方的区域中一起移动。

    Electron beam lithography system having improved electron gun
    18.
    发明申请
    Electron beam lithography system having improved electron gun 失效
    电子束光刻系统具有改进的电子枪

    公开(公告)号:US20040232357A1

    公开(公告)日:2004-11-25

    申请号:US10803352

    申请日:2004-03-18

    Abstract: An electron beam lithography system has an electron gun including at least one laser that is operable in a first mode to generate electrons for lithography. The electron beam lithography system is operable in a second mode to regenerate the photocathode of the electron gun by application of the laser. The photocathode includes a layer of cesium telluride.

    Abstract translation: 电子束光刻系统具有包括至少一个激光器的电子枪,该激光器可在第一模式中操作以产生用于光刻的电子。 电子束光刻系统可在第二模式中操作,以通过施加激光来再生电子枪的光电阴极。 光电阴极包括碲化铯层。

    Exposure apparatus and exposure method
    19.
    发明申请
    Exposure apparatus and exposure method 失效
    曝光装置和曝光方法

    公开(公告)号:US20040119029A1

    公开(公告)日:2004-06-24

    申请号:US10613148

    申请日:2003-07-07

    Abstract: The present invention provides an exposure technology capable of generating bitmap data with high efficiency, and making compatible higher resolution and higher speed control in exposure using pattern data in a bitmap format. An apparatus implementing the exposure technology comprises: a means for applying a charged particle beam or a light onto a sample, and exposing a desired pattern onto the sample; a data processing means for bitmapping the shape of the pattern, and generating the pattern shape data in the bitmap format; and a means for controlling the application of the charged beam or light onto the sample using the pattern shape data in the bitmap format, and the data processing means comprising a function of rejecting an overlap area between patterns from pattern vertex data defining the pattern shape; and a function of generating the pattern shape data in the bitmap format based on the result of the overlap rejection function.

    Abstract translation: 本发明提供一种能够以高效率产生位图数据的曝光技术,并且使用位图格式的图案数据在曝光中进行兼容的更高分辨率和更高速度的控制。 实施曝光技术的装置包括:将带电粒子束或光施加到样本上并将期望图案暴露在样本上的装置; 用于对图案的形状进行位图的数据处理装置,以位图格式生成图案形状数据; 以及用于使用位图格式的图案形状数据控制将带电波束或光应用于样本的装置,并且所述数据处理装置包括拒绝限定图案形状的图案顶点数据的图案之间的重叠区域的功能; 以及基于重叠拒绝功能的结果生成位图格式的图案形状数据的功能。

    Nanostructures
    20.
    发明申请
    Nanostructures 失效
    纳米结构

    公开(公告)号:US20030102444A1

    公开(公告)日:2003-06-05

    申请号:US10258866

    申请日:2002-10-29

    Abstract: A fast method of creating nanostructures comprising the steps of forming one or more electrically-charged regions (5) of predetermined shape on a surface (1) of a first material, by contacting the regions with a stamp for transferring electric charge, and providing electrically charged nanoparticles (7) of a second material, and permitting the particles to flow in the vicinity of the regions, to be deposited on the regions.

    Abstract translation: 一种创建纳米结构的快速方法,包括以下步骤:在第一材料的表面(1)上形成预定形状的一个或多个带电区域(5),通过使该区域与用于转移电荷的印模接触,并且提供电 带电的纳米颗粒(7),并允许颗粒在该区域附近流动以沉积在该区域上。

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