公开(公告)号：US12052525B2

公开(公告)日：2024-07-30

申请号：US17620359

申请日：2020-06-22

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Daisuke Ito ,  Kazuyuki Tomida ,  Masaki Haneda ,  Tsuyoshi Suzuki ,  Takaaki Minami

IPC: H04N25/79 ,  H01L27/146 ,  H04N25/75 ,  H04N25/778

CPC classification number: H04N25/79 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H04N25/75 ,  H04N25/778

Abstract: An imaging device according to an embodiment of the present disclosure includes: a first substrate including a sensor pixel that performs photoelectric conversion; a second substrate including a pixel circuit that outputs a pixel signal on a basis of electric charges outputted from the sensor pixel; and a third substrate including a processing circuit that performs signal processing on the pixel signal. The first substrate, the second substrate, and the third substrate are stacked in this order, and a low-permittivity region is provided in at least any region around a circuit that reads electric charges from the sensor pixel and outputs the pixel signal.

公开(公告)号：US12052519B2

公开(公告)日：2024-07-30

申请号：US18323093

申请日：2023-05-24

Applicant: Waymo LLC

Inventor： Vlad Cardei ,  Lucian Ion ,  Nirav Dharia

IPC: H04N25/443 ,  G06F9/50 ,  G06V10/22 ,  H04N23/61 ,  H04N23/80 ,  H04N25/79 ,  H04N25/13 ,  H04N25/133

CPC classification number: H04N25/443 ,  G06F9/5038 ,  G06V10/22 ,  H04N23/61 ,  H04N23/80 ,  H04N25/79 ,  H04N25/133 ,  H04N25/134

Abstract: A system includes an image sensor having a plurality of pixels that form a plurality of regions of interest (ROIs), image processing resources, and a scheduler configured to perform operations including determining a priority level for a particular ROI of the plurality of ROIs based on a feature detected by one or more image processing resources of the image processing resources within initial image data associated with the particular ROI. The operations also include selecting, based on the feature detected within the initial image data, a particular image processing resource of the image processing resources by which subsequent image data generated by the particular ROI is to be processed. The operations further include inserting, based on the priority level, the subsequent image data into a processing queue of the particular image processing resource to schedule the subsequent image data for processing by the particular image processing resource.

公开(公告)号：US20240250104A1

公开(公告)日：2024-07-25

申请号：US18416388

申请日：2024-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyunha PARK ,  Jeongsoon KANG ,  Jongeun PARK ,  Gwideok Ryan LEE ,  Dongseok CHO

IPC: H01L27/146 ,  H01L23/00 ,  H04N25/79

CPC classification number: H01L27/14634 ,  H01L24/08 ,  H01L24/80 ,  H01L27/1469 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H04N25/79

Abstract: Provided is an image sensor including a first structure and a second structure stacked in a vertical direction, wherein the first structure includes a first pixel region, a photoelectric conversion unit in the first pixel region, a floating diffusion region in the first pixel region, a first interlayer insulating layer on the floating diffusion region, and a first pixel pad electrically connected to the floating diffusion region, and the second structure includes a second pixel region, a source-follower transistor in the second pixel region, a second interlayer insulating layer on the source-follower transistor, and a second pixel pad electrically connected to a gate of the source-follower transistor, and the image sensor includes a coupling prevention line arranged around the first and second pixel pads and electrically connected to the source region of the source-follower transistor.

公开(公告)号：US12035062B2

公开(公告)日：2024-07-09

申请号：US17684769

申请日：2022-03-02

Applicant: Canon Kabushiki Kaisha

Inventor： Eiji Aizawa ,  Eiki Aoyama

IPC: H04N25/79 ,  H01L27/146 ,  H04N17/00 ,  H04N25/76

CPC classification number: H04N25/79 ,  H04N17/002 ,  H04N25/76 ,  H01L27/14634

Abstract: A semiconductor device in which a plurality of substrates including a first substrate and a second substrate are stacked, wherein the first substrate includes a pixel unit in which a plurality of pixels are arranged, the second substrate includes a control circuit configured to control the semiconductor device, and the first substrate further includes a detection circuit configured to detect a connection state of a connection portion between the first substrate and the second substrate.

公开(公告)号：US12035060B2

公开(公告)日：2024-07-09

申请号：US17520466

申请日：2021-11-05

Applicant: OmniVision Technologies, Inc.

Inventor： Zhiyong Zhan ,  Yin Qian

IPC: H04N25/70 ,  G03B17/55 ,  H01L27/146 ,  H04N23/52 ,  H04N23/54 ,  H04N23/57 ,  H04N25/709 ,  H04N25/79 ,  H05K1/02 ,  H05K7/20

CPC classification number: H04N25/70 ,  G03B17/55 ,  H01L27/14601 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469 ,  H04N23/52 ,  H04N23/54 ,  H04N23/57 ,  H04N25/709 ,  H04N25/79 ,  H05K1/0203 ,  H05K1/0206 ,  H05K7/2039 ,  H05K2201/10121

Abstract: A stacked image sensor includes a signal-processing circuitry layer, a pixel-array substrate, a heat-transport layer, and a thermal via. The signal-processing circuitry layer includes a conductive pad exposed on a circuitry-layer bottom surface of the signal-processing circuitry layer. The pixel-array substrate includes a pixel array and is disposed on a circuitry-layer top surface of the signal-processing circuitry layer. The circuitry-layer top surface is between the circuitry-layer bottom surface and the pixel-array substrate. The heat-transport layer is located between the signal-processing circuitry layer and the pixel-array substrate. The thermal via thermally couples the heat-transport layer to the conductive pad.

公开(公告)号：US20240137669A1

公开(公告)日：2024-04-25

申请号：US18403554

申请日：2024-01-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SANSHIRO SHISHIDO

IPC: H04N25/76 ,  H01L27/146 ,  H04N25/79

CPC classification number: H04N25/76 ,  H01L27/14612 ,  H04N25/79

Abstract: An imaging device including first and second substrate; first and second connection portion electrically connecting the first and second substrate; a first and second pixel; and a common signal line for the first and second pixel. Each of the first and second pixels includes: a photoelectric converter that converts incident light into a signal charge, and a first transistor that outputs a signal corresponding to the signal charge to the common signal line. The first substrate includes the photoelectric converter and first transistor of the first and second pixels. The second substrate includes: a first line transmitting a voltage to the first transistor of the first and second pixel, and a voltage source coupled to the first transistor of the first pixel, via the first line and the first connection portion, and coupled to the first transistor of the second pixel, via the first line and the second connection portion.

公开(公告)号：US20240118399A1

公开(公告)日：2024-04-11

申请号：US18119216

申请日：2023-03-08

Applicant: SK hynix Inc.

Inventor： Jae Hyung JANG

IPC: G01S7/4914 ,  G01S17/36 ,  G01S17/894 ,  H04N25/771 ,  H04N25/79

CPC classification number: G01S7/4914 ,  G01S17/36 ,  G01S17/894 ,  H04N25/771 ,  H04N25/79

Abstract: An image sensor includes: a unit pixel configured to output pixel data in response to a drive signal being input to the unit pixel; and a control circuit configured to provide the unit pixel with a first drive signal and a second drive signal each having a first phase, and a third drive signal having a second phase with a phase difference of 180 degrees with respect to the first phase in a first mode, the control circuit providing the unit pixel with the first drive signal having the first phase, the second drive signal having the second phase, and the third drive signal having a deactivation voltage in a second mode.

公开(公告)号：US11948963B2

公开(公告)日：2024-04-02

申请号：US18174904

申请日：2023-02-27

Applicant: Sony Semiconductor Solutions Corporation

Inventor： Hirofumi Yamashita

IPC: H01L27/146 ,  H04N25/60 ,  H04N25/79 ,  H03F3/45

CPC classification number: H01L27/14641 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14643 ,  H04N25/60 ,  H04N25/79 ,  H03F3/4521

Abstract: Provided is an imaging apparatus including an imaging unit having a plurality of pixels, the pixels each having: a conversion element converting incident light into photoelectrons; a floating diffusion layer electrically connected to the conversion element and converting the photoelectrons into a voltage signal; a differential amplifier circuit electrically connected to the floating diffusion layer, including an amplifier transistor to which a potential of the floating diffusion layer is input, and amplifying the potential of the floating diffusion layer; a feedback transistor electrically connected to the amplifier transistor and initializing the differential amplifier circuit; a clamp capacitance connected in series between the floating diffusion layer and the amplifier transistor; and a reset transistor connected in parallel between the floating diffusion layer and the clamp capacitance and initializing the potential of the floating diffusion layer.

公开(公告)号：US11942499B2

公开(公告)日：2024-03-26

申请号：US17232735

申请日：2021-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Masato Fujita ,  Doosik Seol ,  Kyungduck Lee ,  Kyungho Lee ,  Taesub Jung

IPC: H01L27/146 ,  H04N25/704 ,  H04N25/79

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N25/704 ,  H04N25/79

Abstract: An image sensor includes a pixel array and a logic circuit. The pixel array includes a pixel isolation layer between a plurality of pixels. Each of the plurality of pixels include a pixel circuit below at least one photodiode. The logic circuit acquires a pixel signal from the plurality of pixels. The pixel array includes at least one autofocusing pixel, which includes a first photodiode, a second photodiode, a pixel internal isolation layer between the first and second photodiodes, and a microlens on the first and second photodiodes. The pixel internal isolation layer includes a first pixel internal isolation layer and a second pixel internal isolation layer, separated from each other in a first direction, perpendicular to the upper surface of the substrate, and the first pixel internal isolation layer and the second pixel internal isolation layer include different materials.

公开(公告)号：US20240064425A1

公开(公告)日：2024-02-22

申请号：US18497512

申请日：2023-10-30

Applicant: Sony Semiconductor Solutions Corporation

Inventor： Toshiyuki NISHIHARA ,  Tomohiro TAKAHASHI ,  Masao MATSUMURA ,  Tsutomu IMOTO

IPC: H04N25/616 ,  H01L27/146 ,  H04N25/60 ,  H04N25/70 ,  H04N25/75 ,  H04N25/76 ,  H04N25/77 ,  H04N25/79 ,  H04N25/771

CPC classification number: H04N25/616 ,  H01L27/146 ,  H04N25/60 ,  H04N25/70 ,  H04N25/75 ,  H04N25/76 ,  H04N25/77 ,  H04N25/79 ,  H04N25/771 ,  H01L27/14634

Abstract: The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.