Abstract:
Methods, systems, and apparatus, for a stray-light testing station. In one aspect, the stray-light testing station includes an illumination assembly including a spatially extended light source and one or more optical elements arranged to direct a beam of light from the spatially extended light source along an optical path to an optical receiver assembly including a lens receptacle configured to receive a lens module and position the lens module in the optical path downstream from the parabolic mirror so that the lens module focuses the beam of light from the spatially extended light source to an image plane, and a moveable frame supporting the optical receiver assembly including one or more adjustable alignment stages to position the optical receiver assembly relative to the illumination assembly such that the optical path of the illumination assembly is within a field of view of the optical receiver assembly.
Abstract:
Deformable optoelectronic devices are provided, including photodetectors, photodiodes, and photovoltaic cells. The devices can be made on a variety of paper substrates, and can include a plurality of fold segments in the paper substrate creating a deformable pattern. Thin electrode layers and semiconductor nanowire layers can be attached to the substrate, creating the optoelectronic device. The devices can be highly deformable, e.g. capable of undergoing strains of 500% or more, bending angles of 25° or more, and/or twist angles of 270° or more. Methods of making the deformable optoelectronic devices and methods of using, e.g. as a photodetector, are also provided.
Abstract:
Utilizing a quench time to deionize an ultraviolet (UV) sensor tube are described herein. One method includes monitoring firing events within a UV sensor tube, where a particular firing event initiates arming the UV sensor tube, initiating a quench time to deionize the UV sensor tube, where the quench time includes, disarming the UV sensor tube to prevent a firing event.
Abstract:
The invention relates to radiation detection with a directly converting semiconductor layer for converting an incident radiation into electrical signals. Sub-band infra-red (IR) irradiation considerably reduces polarization in the directly converting semi-conductor material when irradiated, so that counting is possible at higher tube currents without any baseline shift. An IR irradiation device is integrated into the readout circuit to which the crystal is flip-chip bonded in order to enable 4-side-buttable crystals.
Abstract:
A circuit sets an output potential at a radio frequency (RF) output of a pin photoreceiver that includes an ohmic terminal resistor connected between a supply voltage and the RF output. The circuit includes a control loop with an ohmic replication resistor having a resistance approximately equal to a resistance of the ohmic terminal resistor. The control loop further includes a sub-circuit configured to measure a voltage difference across the ohmic replication resistor and to reproduce the voltage difference as the supply voltage at an output terminal of the control loop.
Abstract:
A photon detector system for detecting photons emitted from an optical fiber, the photon detector system comprising a receiving mechanism for receiving the optical fiber; a photon detector comprising a superconducting element and aligned with the receiving mechanism, the photon detector having an active area for detecting photons emitted from an end-face of the optical fiber received in the receiving mechanism and an urging mechanism for urging together the photon detector and the optical fiber.
Abstract:
Disclosed is a single photon detector comprising a semiconductor substrate and a 2D material layer provided adjacent to the semiconductor substrate, the semiconductor substrate includes a first well having a first conductivity type, a heavily doped region having a second conductivity type different from the first conductivity type, and a depletion region provided between the first well and the heavily doped region.
Abstract:
A photon detecting component is provided. The photon detecting component includes a first waveguide and a detecting section. The detecting section includes a second waveguide; a detector, optically coupled with the second waveguide, configured to detect one or more photons in the second waveguide; an optical switch configured to provide an optical coupling between the first waveguide and the second waveguide when the detector is operational; and an electrical switch electrically coupled to the detector, wherein the electrical switch is configured to change state in response to the detector detecting one or more photons. The photon detecting component further includes readout circuitry configured to determine a state of the electrical switch of the detecting section.
Abstract:
A photon detection device according to an aspect of the present invention includes: a superconducting photon detector array in which a plurality of superconducting photon detectors (SPDs) are arranged; a plurality of first transmission lines connected to the plurality of SPDs and configured to transmit a detection current output from each of the plurality of SPDs; an address information generation circuit connected to the plurality of first transmission lines and configured to generate, based on the detection current, an address information signal that specifies a superconducting photon detector from which the detection current is output; a second transmission line magnetically coupled to all of the plurality of first transmission lines; and a time information generation circuit connected to the second transmission line and configured to generate, based on the detection current, a time information signal indicating a time at which a photon is incident on the plurality of superconductive photon detection SPDs.
Abstract:
Provided are a photon detection device and a photon detection method being practical, capable of performing photon detection in which no afterpulse is generated and generation of a dark count is suppressed, and capable of obtaining a high counting rate with low jitter. The photon detection device of the present invention includes: a photon detection section having a long plate-shaped superconducting stripline whose plate surface is a photon detection surface, and a bias current supply section supplying a bias current to the superconducting stripline; and a single flux quantum comparator circuit capable of detecting magnetic flux scattered from the superconducting stripline upon photon detection.