公开(公告)号：US09869912B2

公开(公告)日：2018-01-16

申请号：US14888451

申请日：2015-10-26

Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd. ,  Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Yong Xu

IPC: H01L29/78 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/786

CPC classification number: G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/13685 ,  G02F2202/104 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78675

Abstract: The present invention provides a LTPS TFT substrate, which includes a black matrix arranged on a first buffer layer of the LTPS TFT substrate to have an area where a TFT device is located is shielded by the black matrix thereby preventing the TFT device from being influenced by light irradiation, maintaining stability of the TFT device; and also saving the manufacturing process of a shielding metal layer, reducing one photo-mask, and lowering down manufacturing cost so as to allow the black matrix, in achieving the functionality of its own (shielding leaking light of the pixel), to also take the place of a shielding metal layer that is commonly adopted in the prior art to shield light for the TFT device and thus providing duality of functionality.

公开(公告)号：US20220149085A1

公开(公告)日：2022-05-12

申请号：US16954253

申请日：2019-12-30

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Juncheng Xiao ,  Fei Ai ,  Guoheng Yin ,  Yong Xu

IPC: H01L27/12

Abstract: The present invention provides a TFT array substrate, a manufacturing method thereof, and a display panel thereof, wherein the thin-film transistor (TFT) array substrate is defined with a first area and a second area, and includes a substrate layer, wherein a first TFT is disposed on the substrate layer in the first area, and a second TFT is disposed on the substrate layer in the second area; and wherein the first TFT is a top-gate TFT, the second TFT is a bottom-gate TFT, and a material used for a source/drain layer of the first TFT is same as a material used for a gate layer of the second TFT. The present invention provides a TFT array substrate, which adopts a novel film structure design, so that a low temperature poly-silicon (LTPS) TFT and Oxide TFT provided thereon can have great compatibility in the design and manufacturing process.