公开(公告)号：US11637200B2

公开(公告)日：2023-04-25

申请号：US17378820

申请日：2021-07-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zong-Han Lin ,  Yi-Han Ye

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06

Abstract: A power semiconductor device includes a substrate, a first well, a second well, a drain, a source, a first gate structure, a second gate structure and a doping region. The first well has a first conductivity and extends into the substrate from a substrate surface. The second well has a second conductivity and extends into the substrate from the substrate surface. The drain has the first conductivity and is disposed in the first well. The source has the first conductivity and is disposed in the second well. The first gate structure is disposed on the substrate surface and at least partially overlapping with the first well and second well. The second gate structure is disposed on the substrate surface and overlapping with the second well. The doping region has the first conductivity, is disposed in the second well and connects the first gate structure with the second gate structure.

公开(公告)号：US09876116B2

公开(公告)日：2018-01-23

申请号：US15617099

申请日：2017-06-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ping Wang ,  Jyh-Shyang Jenq ,  Yu-Hsiang Lin ,  Hsuan-Hsu Chen ,  Chien-Hao Chen ,  Yi-Han Ye

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L29/66795

Abstract: A semiconductor structure and a manufacturing method for the same are disclosed. The semiconductor structure includes a first gate structure, a second gate structure and a second dielectric spacer. Each of the first gate structure and the second gate structure adjacent to each other includes a first dielectric spacer. The second dielectric spacer is on one of opposing sidewalls of the first gate structure and without being disposed on the dielectric spacer of the second gate structure.

公开(公告)号：US20170271504A1

公开(公告)日：2017-09-21

申请号：US15617099

申请日：2017-06-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ping Wang ,  Jyh-Shyang Jenq ,  Yu-Hsiang Lin ,  Hsuan-Hsu Chen ,  Chien-Hao Chen ,  Yi-Han Ye

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L29/66795

Abstract: A semiconductor structure and a manufacturing method for the same are disclosed. The semiconductor structure includes a first gate structure, a second gate structure and a second dielectric spacer. Each of the first gate structure and the second gate structure adjacent to each other includes a first dielectric spacer. The second dielectric spacer is on one of opposing sidewalls of the first gate structure and without being disposed on the dielectric spacer of the second gate structure.