公开(公告)号：US20100213519A1

公开(公告)日：2010-08-26

申请号：US12690566

申请日：2010-01-20

Applicant: Tomoyuki SASAKI ,  Tohru OIKAWA ,  Katsumichi TAGAMI

Inventor： Tomoyuki SASAKI ,  Tohru OIKAWA ,  Katsumichi TAGAMI

IPC: H01L43/00

CPC classification number: H01L29/66984 ,  H01L29/0657 ,  H01L29/0684

Abstract: An object of the present invention is to provide a silicon spin transport device manufacturing method and silicon spin transport device whereby improved voltage output characteristics can be obtained. The silicon spin transport device manufacturing method comprises: a first step of patterning a silicon film by wet etching and forming a silicon channel layer; and a second step of forming a magnetization free layer and a magnetization fixed layer, which are apart from each other, on the silicon channel layer.

Abstract translation: 本发明的目的是提供一种硅自旋传输装置的制造方法和硅自旋传输装置，从而可获得改进的电压输出特性。 硅自旋传输器件的制造方法包括：通过湿蚀刻图案化硅膜并形成硅沟道层的第一步骤; 以及在硅沟道层上形成彼此分开的无磁化层和磁化固定层的第二步骤。

公开(公告)号：US20100119875A1

公开(公告)日：2010-05-13

申请号：US12608583

申请日：2009-10-29

Applicant: Tomoyuki SASAKI

Inventor： Tomoyuki SASAKI

IPC: G11B5/33

CPC classification number: G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/3254 ,  Y10T428/11 ,  Y10T428/115

Abstract: An object is to provide a magnetic sensor permitting an increase in potential output. The magnetic sensor has a channel layer, a magnetization free layer provided on a first portion of the channel layer and configured to detect an external magnetic field, and a magnetization fixed layer provided on a second portion different from the first portion of the channel layer, and a cross-sectional area of the magnetization fixed layer in a surface opposed to the channel layer is larger than a cross-sectional area of the magnetization free layer in a surface opposed to the channel layer.

Abstract translation: 目的是提供允许增加电位输出的磁传感器。 磁传感器具有沟道层，设置在沟道层的第一部分上并被配置为检测外部磁场的磁化自由层以及设置在不同于沟道层的第一部分的第二部分上的磁化固定层， 并且与通道层相对的表面中的磁化固定层的横截面面积大于与通道层相对的表面中的无磁化层的横截面面积。

公开(公告)号：US20090310263A1

公开(公告)日：2009-12-17

申请号：US12471909

申请日：2009-05-26

Applicant: Tomoyuki SASAKI

Inventor： Tomoyuki SASAKI

IPC: G11B5/33 ,  G11B5/127

CPC classification number: G01R33/098 ,  G11B5/398

Abstract: A magnetic sensor comprises a nonmagnetic conductive layer, a free magnetization layer disposed on a first part of the nonmagnetic conductive layer, a fixed magnetization layer disposed on a second part of the nonmagnetic conductive layer different from the first part, upper and lower first magnetic shield layers opposing each other through the nonmagnetic conductive layer and free magnetization layer interposed therebetween, upper and lower second magnetic shield layers opposing each other through the nonmagnetic conductive layer and fixed magnetization layer interposed therebetween, and an electrically insulating layer disposed between the lower second magnetic shield layer and the nonmagnetic conductive layer, while the lower first magnetic shield layer is arranged closer to the nonmagnetic conductive layer than is the lower second magnetic shield layer.

Abstract translation: 磁传感器包括非磁性导电层，设置在非磁性导电层的第一部分上的自由磁化层，设置在不同于第一部分的非磁性导电层的第二部分上的固定磁化层，上部和下部第一磁屏蔽 通过非磁性导电层和介于其间的自由磁化层彼此相对的层，通过非磁性导电层和介于其间的固定磁化层彼此相对的上下第二磁屏蔽层和设置在下第二磁屏蔽之间的电绝缘层 层和非磁性导电层，而下部第一磁屏蔽层比下部第二磁屏蔽层更靠近非磁性导电层布置。

公开(公告)号：US20120181643A1

公开(公告)日：2012-07-19

申请号：US13351632

申请日：2012-01-17

Applicant: Tomoyuki SASAKI

Inventor： Tomoyuki SASAKI

IPC: H01L29/82

CPC classification number: H01L29/66984 ,  H01F10/3254

Abstract: The spin transport device includes a semiconductor layer; a first ferromagnetic layer provided on the semiconductor layer via a first tunnel barrier layer; a second ferromagnetic layer provided on the semiconductor layer via a second tunnel barrier layer so as to be divided from the first ferromagnetic layer; and a first wire which generates, upon application of an electric current, a magnetic field in a region between the first ferromagnetic layer and the second ferromagnetic layer in the semiconductor layer.

Abstract translation: 自旋传输装置包括半导体层; 经由第一隧道势垒层设置在所述半导体层上的第一铁磁层; 第二铁磁层，其经由第二隧道势垒层设置在所述半导体层上，以从所述第一铁磁层分割; 以及第一线，其在施加电流时在半导体层中的第一铁磁层和第二铁磁层之间的区域中产生磁场。

公开(公告)号：US20100007995A1

公开(公告)日：2010-01-14

申请号：US12471804

申请日：2009-05-26

Applicant: Tomoyuki SASAKI

Inventor： Tomoyuki SASAKI

IPC: G11B5/127

CPC classification number: G11B5/33 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/127 ,  G11B5/3912 ,  G11B2005/3996

Abstract: A magnetic sensor comprises a nonmagnetic conductive layer, a free magnetization layer disposed on a first part of the nonmagnetic conductive layer, a fixed magnetization layer disposed on a second part of the nonmagnetic conductive layer different from the first part, upper and lower first magnetic shield layers opposing each other through the nonmagnetic conductive layer and free magnetization layer interposed therebetween, upper and lower second magnetic shield layers opposing each other through the nonmagnetic conductive layer and fixed magnetization layer interposed therebetween, a first electrically insulating layer disposed between the lower second magnetic shield layer and nonmagnetic conductive layer, and a first electrode layer for electrically connecting the lower second magnetic shield layer and nonmagnetic conductive layer to each other, while the fixed magnetization layer and first electrode layer oppose each other through the nonmagnetic conductive layer.

Abstract translation: 磁传感器包括非磁性导电层，设置在非磁性导电层的第一部分上的自由磁化层，设置在不同于第一部分的非磁性导电层的第二部分上的固定磁化层，上部和下部第一磁屏蔽 通过非磁性导电层和介于其间的自由磁化层彼此相对的层，通过非磁性导电层和介于其间的固定磁化层彼此相对的上下第二磁屏蔽层，设置在下第二磁屏蔽之间的第一电绝缘层 层和非磁性导电层，以及第一电极层，用于将下部第二磁屏蔽层和非磁性导电层彼此电连接，同时固定磁化层和第一电极层通过非磁性导电层彼此相对。

公开(公告)号：US20090323230A1

公开(公告)日：2009-12-31

申请号：US12471995

申请日：2009-05-26

Applicant: Tomoyuki SASAKI

Inventor： Tomoyuki SASAKI

IPC: G11B5/127

CPC classification number: G01R33/1284 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/398

Abstract: A magnetic sensor comprises a support; a nonmagnetic conductive layer disposed on the support; a fixed magnetization layer disposed on a first part of the nonmagnetic conductive layer and on the support; a free magnetization layer disposed on a second part of the nonmagnetic conductive layer different from the first part and on the support; and a nonmagnetic low resistance layer, disposed on a part overlapping the nonmagnetic conductive layer in at least one of the fixed magnetization layer and free magnetization layer, having an electrical resistivity lower than that of the one layer.

Abstract translation: 磁传感器包括支撑件; 设置在所述支撑体上的非磁性导电层; 固定磁化层，设置在非磁性导电层的第一部分和支撑体上; 设置在不同于第一部分和支撑件上的非磁性导电层的第二部分上的自由磁化层; 和非磁性低电阻层，其设置在与所述固定磁化层和自由磁化层中的至少一个中的所述非磁性导电层重叠的部分上，其电阻率低于所述一层的电阻率。

公开(公告)号：US20110244268A1

公开(公告)日：2011-10-06

申请号：US13044927

申请日：2011-03-10

Applicant: Tomoyuki SASAKI

Inventor： Tomoyuki SASAKI

IPC: G11B5/33

CPC classification number: G01R33/1284 ,  Y10T428/11 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/1193

Abstract: A spin transport element 1 has a first ferromagnet 12A, a second ferromagnet 12B, a channel 7 extending from the first ferromagnet 12A to the second ferromagnet 12B, a magnetic shield S1 covering the channel 7, and an insulating film provided between the channel 7 and the magnetic shield S1.

Abstract translation: 自旋传输元件1具有第一铁磁体12A，第二铁磁体12B，从第一铁磁体12A延伸到第二铁磁体12B的通道7，覆盖通道7的磁屏蔽S1，以及设置在通道7和 磁屏S1。