公开(公告)号：US20140027059A1

公开(公告)日：2014-01-30

申请号：US14026006

申请日：2013-09-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masanobu HONDA ,  Shinji HIMORI

IPC: H01J37/32

CPC classification number: H01J37/32009 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541

Abstract: The present invention provides an upper electrode and an etching apparatus including the electrode, both of which can properly reduce the intensity of the electric field of plasma around a central portion of a substrate, thus enhancing in-plane uniformity. In this apparatus, a recess, serving as a space for allowing a dielectric to be injected therein, is provided around a central portion of the upper electrode. Both a dielectric supply passage and a dielectric discharge passage are connected with the space. With such configuration, controlled supply of the dielectric into the recess makes the in-plane electric field intensity distribution uniform over various process conditions, such as the kind of wafer to be etched, the processing gas to be used, and the like.

Abstract translation: 本发明提供了一种上电极和包括该电极的蚀刻装置，两者均可以适当地降低围绕基板的中心部分的等离子体的电场强度，从而提高面内均匀性。 在该装置中，在上部电极的中心部分的周围设置用作容纳电介质的空间的凹部。 电介质供给通路和介质排出通路均与该空间连接。 通过这样的配置，电介质进入凹槽的受控供应使面内电场强度分布在各种工艺条件下均匀，例如待蚀刻晶片的种类，待使用的处理气体等。

公开(公告)号：US20240213000A1

公开(公告)日：2024-06-27

申请号：US18421988

申请日：2024-01-25

Applicant: Tokyo Electron Limited

Inventor： Kazuya NAGASEKI ,  Kazuki MOYAMA ,  Shinji HIMORI ,  Masanobu HONDA ,  Satoru TERUUCHI

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01J37/3244 ,  H01L21/6833 ,  H01J2237/2065

Abstract: A processing method for performing plasma processing on a substrate includes placing a temperature adjustment target onto a support surface of a substrate support in a decompressible processing, forming a heat transfer layer by supplying, through the substrate support, a heat transfer medium including at least one of a liquid medium or a solid medium with fluidity to between the support surface of the substrate support and a back surface of the temperature adjustment target, performing plasma processing on the substrate on the support surface on which the heat transfer layer is formed, and separating the temperature adjustment target from the support surface after the plasma processing.

公开(公告)号：US20220301825A1

公开(公告)日：2022-09-22

申请号：US17834948

申请日：2022-06-08

Applicant: Tokyo Electron Limited

Inventor： Shinji KUBOTA ,  Kazuya NAGASEKI ,  Shinji HIMORI ,  Koichi NAGAMI

IPC: H01J37/32

Abstract: A disclosed plasma processing method includes generating plasma in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source in a first period. The plasma processing method further includes stopping supply of the radio frequency power from the radio frequency power source in a second period following the first period. The plasma processing method further includes applying a negative direct-current voltage from a bias power source to a substrate support in a third period following the second period. In the third period, the radio frequency power is not supplied. In the third period, the negative direct-current voltage is set to generate ions in a chamber by secondary electrons that are emitted by causing ions in the chamber to collide with a substrate.

公开(公告)号：US20190244794A1

公开(公告)日：2019-08-08

申请号：US16389434

申请日：2019-04-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro YOKOTA ,  Shinji HIMORI ,  Tatsuro OHSHITA ,  Shu KUSANO

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01J37/32669 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32339 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3266

Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.

公开(公告)号：US20140020832A1

公开(公告)日：2014-01-23

申请号：US14036885

申请日：2013-09-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takeshi OHSE ,  Shinji HIMORI ,  Jun ABE ,  Norikazu YAMADA

IPC: H01J37/02

CPC classification number: H01J37/02 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

Abstract: A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.

Abstract translation: 基板处理方法使用基板处理装置，其包括用于容纳基板的室，用于安装基板的下电极，用于将用于等离子体产生的RF功率施加到室中的第一RF功率施加单元和第二RF功率施加单元 用于向下电极施加用于偏压的RF功率。 通过在预定的定时改变第一RF功率施加单元的输出来控制等离子体产生的RF功率间歇地改变。 如果通过第一RF功率施加单元的控制在腔室中不存在等离子体状态或余辉状态，则第二RF功率施加单元的输出被控制为处于OFF状态或降低到低于第二RF功率的输出 当第一RF功率施加单元的输出为设定输出时，施加单元。

公开(公告)号：US20130075037A1

公开(公告)日：2013-03-28

申请号：US13684416

申请日：2012-11-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuo MATSUDO ,  Shinji HIMORI

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32577 ,  H01J37/32642

Abstract: A plasma processing apparatus includes a processing gas supplying unit for supplying a desired processing gas to a processing space between an upper electrode and a lower electrode which are disposed facing each other in an evacuable processing chamber. The plasma processing apparatus further includes a radio frequency (RF) power supply unit for applying an RF power to one of the lower and the upper electrode to generate plasma of the processing gas by RF discharge and an electrically conductive RF ground member which covers a peripheral portion of the electrode to which the RF power is applied to receive RF power emitted outwardly in radial directions from the periphery portion of the electrode to which the RF power is applied and send the received RF power to a ground line.

Abstract translation: 等离子体处理装置包括处理气体供给单元，用于将所需的处理气体供给到在可排气处理室中彼此面对地设置的上部电极和下部电极之间的处理空间。 等离子体处理装置还包括：射频（RF）电源单元，用于向下电极和上电极之一施加RF功率，以通过RF放电产生处理气体的等离子体;以及导电RF接地部件，其覆盖周边 施加RF功率的电极的部分，以接收从RF电源所施加的电极的周边部分沿径向向外发射的RF功率，并将接收到的RF功率发送到接地线。

公开(公告)号：US20240194459A1

公开(公告)日：2024-06-13

申请号：US18416880

申请日：2024-01-18

Applicant: Tokyo Electron Limited

Inventor： Kazuya NAGASEKI ,  Kazuki MOYAMA ,  Shinji HIMORI ,  Masanobu HONDA ,  Satoru TERUUCHI

IPC: H01J37/32

CPC classification number: H01J37/32724

Abstract: A processing method and corresponding device for performing plasma processing on a substrate includes placing a temperature adjustment target onto a support surface of a substrate support in a processing chamber being decompressible, forming a heat transfer layer for the temperature adjustment target on the support surface of the substrate support, and performing plasma processing on the substrate on the support surface on which the heat transfer layer is formed. The heat transfer layer is deformable and includes at least one of a liquid layer or a deformable solid layer.

公开(公告)号：US20240096608A1

公开(公告)日：2024-03-21

申请号：US18515220

申请日：2023-11-20

Applicant: Tokyo Electron Limited

Inventor： Satoru TERUUCHI ,  Jun HIROSE ,  Kazuya NAGASEKI ,  Shinji HIMORI

IPC: H01J37/32 ,  G01N21/68

CPC classification number: H01J37/32935 ,  G01N21/68 ,  H01J2237/2445 ,  H01J2237/24585 ,  H01L21/67253

Abstract: A plasma monitoring system includes a monitoring device and a control device. The monitoring device is a device to be placed on a stage in the plasma processing apparatus. The monitoring device includes a plate-shaped base substrate, and a plurality of spectroscopes having optical axes facing upward on the base substrate, and being disposed apart from each other to acquire light emission intensities of the plasma. The control device acquires light emission intensity distribution data of the plasma in the plasma processing apparatus based on the light emission intensity acquired by each of the plurality of spectroscopes.

公开(公告)号：US20210159049A1

公开(公告)日：2021-05-27

申请号：US17102444

申请日：2020-11-24

Applicant: Tokyo Electron Limited

Inventor： Shinji KUBOTA ,  Kazuya NAGASEKI ,  Shinji HIMORI ,  Koichi NAGAMI

IPC: H01J37/32

Abstract: A disclosed plasma processing method includes generating plasma in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source in a first period. The plasma processing method further includes stopping supply of the radio frequency power from the radio frequency power source in a second period following the first period. The plasma processing method further includes applying a negative direct-current voltage from a bias power source to a substrate support in a third period following the second period. In the third period, the radio frequency power is not supplied. In the third period, the negative direct-current voltage is set to generate ions in a chamber by secondary electrons that are emitted by causing ions in the chamber to collide with a substrate.

公开(公告)号：US20250069851A1

公开(公告)日：2025-02-27

申请号：US18944017

申请日：2024-11-12

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Shinji HIMORI

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, and a bias power supply system. The substrate support is in the chamber and includes a central portion on which a substrate is placeable. The radio-frequency power supply generates source radio-frequency power. The bias power supply system respectively provides first electrical bias energy and second electrical bias energy to a first electrode and a second electrode. The first electrode is at least in the central portion of the substrate support. The second electrode is in an outer portion located outward from the central portion in a radial direction that is radial from a center of the central portion. The bias power supply system adjusts the first and second electrical bias energy to increase electric field strength above one of the central portion or the outer portion earlier than electric field strength above the other portion.