公开(公告)号：US20220271148A1

公开(公告)日：2022-08-25

申请号：US17227057

申请日：2021-04-09

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Mao-Lin HUANG ,  Lung-Kun CHU ,  Chung-Wei HSU ,  Jia-Ni YU ,  Chun-Fu LU ,  Kuo-Cheng CHIANG ,  Kuan-Lun CHENG ,  Chih-Hao WANG

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/8234

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a fin structure formed over a substrate, and a gate structure formed over the fin structure. The gate structure includes a first layer, and a fill layer over the first layer. The gate structure includes a protection layer formed over the fill layer of the gate structure, and the protection layer is separated from the first layer by the fill layer.