公开(公告)号：US20200294807A1

公开(公告)日：2020-09-17

申请号：US16887218

申请日：2020-05-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei CHANG ,  Kao-Feng LIN ,  Min-Hsiu HUNG ,  Yi-Hsiang CHAO ,  Huang-Yi HUANG ,  Yu-Ting LIN

IPC: H01L21/285 ,  H01L21/28 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49

Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

公开(公告)号：US20200052126A1

公开(公告)日：2020-02-13

申请号：US16654175

申请日：2019-10-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh WANG ,  Yu-Ting LIN ,  Yueh-Ching PAI ,  Shih-Chieh CHANG ,  Huai-Tei YANG

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L27/088 ,  H01L21/8238 ,  H01L21/768 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/32 ,  H01L21/8234 ,  H01L21/02

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure formed over a fin structure and a gate spacer formed on a sidewall surface of the gate structure. The semiconductor structure also includes a first source/drain (S/D) epitaxial layer formed in the fin structure and adjacent to the gate spacer, and a second S/D epitaxial layer formed over the first S/D epitaxial layer. A top surface of the second S/D layer is higher than a top surface of the first S/D epitaxial layer.