公开(公告)号：US10062787B2

公开(公告)日：2018-08-28

申请号：US15415790

申请日：2017-01-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Ting Hsiao ,  Cheng-Ta Wu ,  Lun-Kuang Tan ,  Liang-Yu Yen ,  Ting-Chun Wang ,  Tsung-Han Wu ,  Wei-Ming You

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L23/535 ,  H01L29/66 ,  H01L21/3215

CPC classification number: H01L29/7856 ,  H01L21/3215 ,  H01L23/535 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/42376 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

Abstract: A FinFET includes a fin structure, a gate, a source-drain region and an inter layer dielectric (ILD). The gate crosses over the fin structure. The source-drain region is in the fin structure. The ILD is laterally adjacent to the gate and includes a dopant, in which a dopant concentration of the ILD adjacent to the gate is lower than a dopant concentration of the ILD away from the gate.