公开(公告)号：US20160172439A1

公开(公告)日：2016-06-16

申请号：US14569336

申请日：2014-12-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Han LIN ,  Jr-Jung LIN ,  Ming-Ching CHANG

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/283 ,  H01L29/78

CPC classification number: H01L29/0642 ,  H01L21/76224 ,  H01L29/66795 ,  H01L29/785

Abstract: A fin-like field-effect transistor (Fin-FET) device includes a substrate, a fin structure disposed on the substrate, and an isolation structure disposed adjacent to the fin structure. The fin structure includes a recessed structure, which a bottom of the recessed structure is below a top surface of the isolation structure.

Abstract translation: 鳍状场效应晶体管（Fin-FET）器件包括衬底，设置在衬底上的鳍结构以及邻近翅片结构设置的隔离结构。 翅片结构包括凹陷结构，凹陷结构的底部在隔离结构的顶表面下方。

公开(公告)号：US20160093537A1

公开(公告)日：2016-03-31

申请号：US14502784

申请日：2014-09-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chang-Yin CHEN ,  Tung-Wen CHENG ,  Che-Cheng CHANG ,  Jr-Jung LIN ,  Chih-Han LIN

IPC: H01L21/8234 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/02

CPC classification number: H01J37/32449 ,  H01J2237/334 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481

Abstract: A method of manufacturing a Fin-FET device includes forming a plurality of fins in a substrate, which the substrate includes a center region and a periphery region surrounding the center region. A gate material layer is deposited over the fins, and the gate material layer is etched with an etching gas to form gates, which the etching gas is supplied at a ratio of a flow rate at the center region to a flow rate at the periphery region in a range from 0.33 to 3.

Abstract translation: 制造Fin-FET器件的方法包括在基板中形成多个翅片，所述基板包括中心区域和围绕中心区域的周边区域。 栅极材料层沉积在鳍片上，栅极材料层用蚀刻气体蚀刻以形成栅极，蚀刻气体以中心区域的流量与周边区域的流量的比率 在0.33至3的范围内。