公开(公告)号：US20150176125A1

公开(公告)日：2015-06-25

申请号：US14574610

申请日：2014-12-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihisa NOZAWA ,  Takehisa SAITO ,  Koji YAMAGISHI

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/345 ,  C23C16/45561 ,  C23C16/4558 ,  C23C16/511

Abstract: Disclosed is a substrate processing apparatus for processing a processing target object by a processing gas. The substrate processing apparatus includes: a processing container configured to accommodate the processing target object; a mounting unit provided within the processing container to place the processing target object thereon; a processing gas supply unit provided in a side wall of the processing container to supply the processing gas into the processing container; and a processing gas diffusion mechanism provided outside the processing gas supply unit. The processing gas diffusion mechanism includes a first diffusion chamber and a second diffusion chamber which are provided in multiple stages, and the first diffusion chamber is located above the second diffusion chamber, and the first diffusion chamber and the second diffusion chamber communicate with each other through a plurality of processing gas communication paths.

Abstract translation: 公开了一种用于通过处理气体处理处理对象物体的基板处理装置。 基板处理装置包括：处理容器，被配置为容纳加工对象物; 设置在处理容器内以将处理目标物体放置在其上的安装单元; 处理气体供给单元，设置在处理容器的侧壁中，以将处理气体供给到处理容器中; 以及设置在处理气体供给单元的外侧的处理气体扩散机构。 处理气体扩散机构包括多级设置的第一扩散室和第二扩散室，第一扩散室位于第二扩散室的上方，第一扩散室和第二扩散室通过 多个处理气体连通路径。

公开(公告)号：US20150159270A1

公开(公告)日：2015-06-11

申请号：US14609862

申请日：2015-01-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihisa NOZAWA ,  Shinji KOMOTO ,  Masahide IWASAKI

IPC: C23C16/44 ,  C23C16/52 ,  C23C16/50

CPC classification number: C23C16/4412 ,  C23C16/50 ,  C23C16/511 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32862 ,  Y10T137/7837

Abstract: Provided is a plasma processing apparatus comprising an exhaust path extending from the exhaust hole to the pump, wherein the pump is configured to depressurize inside of the processing container and the exhausting path, wherein the exhaust path includes a horizontally linearly extended portion, wherein the horizontally linearly extended portion of the exhaust path has a rectangular or oval cross-section having a horizontal length longer than a vertical length; wherein the plasma processing apparatus further includes a pressure control valve disposed in the horizontally linearly extended portion of the exhaust path; and wherein the pressure control valve is formed of a pressure control valve plate having substantially same shape and size as those of the cross-section and a shaft formed in the pressure control valve along the horizontal length of the cross-section, in such a manner that the pressure control valve plate rotates about the shaft.

Abstract translation: 提供了一种等离子体处理装置，其包括从排气孔延伸到泵的排气路径，其中，泵构造成在处理容器和排气路径内部减压，其中排气路径包括水平线性延伸部分，其中水平 排气路径的直线延伸部分具有水平长度大于垂直长度的矩形或椭圆形横截面; 其中所述等离子体处理装置还包括设置在所述排气路径的水平线性延伸部分中的压力控制阀; 并且其中所述压力控制阀由具有与所述横截面形状和尺寸基本相同的形状和尺寸的压力控制阀板和沿所述横截面的水平长度形成在所述压力控制阀中的轴以这种方式形成 压力控制阀板围绕轴旋转。

公开(公告)号：US20130081763A1

公开(公告)日：2013-04-04

申请号：US13684850

申请日：2012-11-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Caizhong TIAN ,  Tetsuya NISHIZUKA ,  Kiyotaka ISHIBASHI ,  Toshihisa NOZAWA

IPC: H01L21/461

CPC classification number: H01L21/461 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3222 ,  H05H1/46 ,  Y10T428/24273

Abstract: A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural protrusion portions arranged along a circle in a surface of the ceiling plate so as to form plural radially disposed virtual convex portions in a place between the concave portions, the surface facing toward an inside of the process chamber. A thickness of places where the concave portions are formed in the ceiling plate and another thickness of other places where the concave portions are not formed in the ceiling plate are determined so that the number of propagation modes of microwaves is different.

Abstract translation: 公开了一种设置在可以被抽真空的处理室的顶部的顶板。 顶棚板允许从天花板板设置的平面天线构件的槽口发出的微波通过顶板进入处理室，并且包括沿着顶板的表面沿着圆形布置的多个突起部分，以便 在凹部之间的位置处形成多个径向设置的虚拟凸部，该表面面向处理室的内部。 确定在顶板中形成凹部的位置的厚度和在顶板中没有形成凹部的其他部分的厚度，使得微波的传播模式的数量不同。

公开(公告)号：US20170198395A1

公开(公告)日：2017-07-13

申请号：US15326078

申请日：2015-06-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihisa NOZAWA

IPC: C23C16/511 ,  H01L21/02 ,  C23C16/34 ,  H01L21/67 ,  C23C16/458 ,  C23C16/46 ,  H01L21/3065 ,  H01L21/687

CPC classification number: C23C16/511 ,  C23C16/345 ,  C23C16/4409 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/463 ,  H01J37/32192 ,  H01J37/32715 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68742 ,  H01L21/68792

Abstract: A plasma processing apparatus includes a processing chamber that air-tightly accommodates a substrate; a microwave supply unit that radiates microwaves into the processing chamber; a processing gas supply unit that supplies a processing gas into the processing chamber; and a substrate holding mechanism that holds the substrate within the processing chamber. A support shaft vertically passes through the bottom surface of the processing chamber to support the bottom surface of the substrate holding mechanism, and a rotary driving mechanism is provided outside the processing chamber to rotate the support shaft. In addition, a magnetic fluid seal air-tightly closes a gap between the support shaft and the processing chamber, and a choke mechanism is provided above the magnetic fluid seal to suppress the magnetic fluid seal from being heated by leakage of microwaves from the gap between the support shaft and the processing chamber.

公开(公告)号：US20170076914A1

公开(公告)日：2017-03-16

申请号：US15263486

申请日：2016-09-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihisa NOZAWA

IPC: H01J37/32 ,  C23C16/50

CPC classification number: H01J37/32009 ,  C23C16/50 ,  H01J37/32211 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/32651 ,  H01J37/32715

Abstract: Disclosed is a plasma processing apparatus including a processing container, a placing table provided in the processing container and configured to place a substrate thereon, a plasma generating mechanism attached to the processing container to face the placing table and configured to supply electronic energy for plasma generation into the processing container, a lattice-shaped member or a plurality of rod-shaped members provided at a position closer to the placing table than an intermediate position between the placing table and the plasma generating mechanism, and a moving mechanism configured to move the lattice-shaped member or the plurality of rod-shaped members and the placing table relative to each other.

Abstract translation: 公开了一种等离子体处理装置，其包括处理容器，设置在处理容器中并构造成在其上放置基板的放置台，等离子体产生机构，其附接到处理容器以面对放置台并且被配置为提供用于等离子体产生的电子能量 进入处理容器，格子状构件或多个杆状构件，设置在比放置台和等离子体生成机构之间的中间位置更靠近放置台的位置;移动机构，其构造成使格子 形状的构件或多个杆状构件和相对于彼此的放置台。

公开(公告)号：US20160071700A1

公开(公告)日：2016-03-10

申请号：US14846083

申请日：2015-09-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihisa NOZAWA

IPC: H01J37/32

CPC classification number: H01J37/3288 ,  H01J37/3244 ,  H01J37/32862

Abstract: Disclosed is a plasma processing apparatus that turns a processing gas into plasma so as to process a substrate. The plasma processing apparatus includes: a processing container configured to hermetically accommodate a substrate therein; a placement table installed on a bottom surface of the processing container, and configured to place the substrate thereon; a gas supply mechanism configured to supply at least one of a processing gas and a purge gas to an inside of the processing container through a gas supply pipe; a plasma generating mechanism configured to generate plasma of the processing gas within the processing container; an exhaust mechanism configured to exhaust the inside of the processing container through an exhaust pipe; and an ultrasonic vibration generating mechanism configured to apply ultrasonic vibration to a corner portion within the processing container.

Abstract translation: 公开了一种等离子体处理装置，其将处理气体转化为等离子体以处理基板。 等离子体处理装置包括：处理容器，其构造成在其中气密地容纳基板; 安置在所述处理容器的底面上并配置为将所述基板放置在其上的放置台; 气体供给机构，被配置为通过气体供给管将处理气体和净化气体中的至少一种供给到处理容器的内部; 等离子体产生机构，被配置为产生处理容器内的处理气体的等离子体; 排气机构，其构造成通过排气管排出处理容器的内部; 以及超声波振动发生机构，其构造成对处理容器内的角部施加超声波振动。

公开(公告)号：US20150110973A1

公开(公告)日：2015-04-23

申请号：US14518101

申请日：2014-10-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takenao NEMOTO ,  Toshihisa NOZAWA

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/34

CPC classification number: C23C16/45561 ,  C23C16/4408 ,  C23C16/45502 ,  C23C16/45519 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

Abstract: A plasma processing apparatus of the present disclosure includes a processing container configured to accommodate a wafer; a placing unit provided on a bottom surface of the processing container to place the wafer thereon; a first processing gas supply pipe provided in a central portion of a ceiling of the processing container to supply a first processing gas into the processing container; a second processing gas supply pipe provided in a side wall of the processing container to supply a second processing gas into the processing container; a rectifying gas supply pipe provided in the side wall of the processing container above the second processing gas supply pipe to supply a rectifying gas downward into the processing container; and a radial line slot antenna configured to radiate microwave into the processing container.

Abstract translation: 本公开的等离子体处理装置包括：配置成容纳晶片的处理容器; 设置在处理容器的底表面上以将晶片放置在其上的放置单元; 第一处理气体供给管，设置在处理容器的顶棚的中心部分，以将第一处理气体供应到处理容器中; 第二处理气体供给管，设置在处理容器的侧壁中，以将第二处理气体供应到处理容器中; 整流气体供给管，其设置在所述处理容器的位于所述第二处理气体供给管的上方的侧壁中，以将整流气体向下供给到所述处理容器中; 以及径向线槽天线，其被配置为将微波辐射到处理容器中。

公开(公告)号：US20150069674A1

公开(公告)日：2015-03-12

申请号：US14542793

申请日：2014-11-17

Applicant: TOKYO ELECTRON LIMITED ,  NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY

Inventor： Masahiro OKESAKU ,  Tadahiro OHMI ,  Tetsuya GOTO ,  Takaaki MATSUOKA ,  Toshihisa NOZAWA ,  Atsutoshi INOKUCHI ,  Kiyotaka ISHIBASHI

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

Abstract: A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

Abstract translation: 喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。 具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结 并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

公开(公告)号：US20140238607A1

公开(公告)日：2014-08-28

申请号：US14187466

申请日：2014-02-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihisa NOZAWA ,  Jun YOSHIKAWA ,  Michitaka AITA ,  Masahiro YAMAZAKI ,  Takehisa SAITO ,  Fumihiko KAJI ,  Koji YAMAGISHI

IPC: H01J37/32

CPC classification number: H01J37/32192 ,  H01J37/32229 ,  H01J37/3244

Abstract: A plasma processing apparatus includes a processing chamber configured to partition a processing space and a microwave generator configured to generate microwaves for plasma excitation. Further, the plasma processing apparatus includes a dielectric member mounted in the processing chamber so as to seal the processing space, and configured to introduce the microwaves generated by the microwave generator into the processing space. Further, the plasma processing apparatus includes an injector mounted in the dielectric member, and configured to supply the processing gas made in a plasma state due to the microwaves to the processing space through a through-hole formed in the dielectric member. Further, the plasma processing apparatus includes a waveguide plate made of a dielectric material mounted in the injector so as to surround the through-hole of the dielectric member, and configured to guide the microwaves propagated into the dielectric member toward the through-hole to an inside of the injector.

Abstract translation: 等离子体处理装置包括：处理室，被配置为分隔处理空间;以及微波发生器，被配置为产生用于等离子体激发的微波。 此外，等离子体处理装置包括安装在处理室中的电介质部件，以密封处理空间，并且将微波发生器产生的微波引入处理空间。 此外，等离子体处理装置包括安装在电介质构件中的喷射器，并且构造成通过形成在电介质构件中的通孔将由微波产生的等离子体状态的处理气体提供给处理空间。 此外，等离子体处理装置包括由安装在喷射器中的电介质材料构成的波导板，以便围绕电介质构件的通孔，并被构造成将传播到电介质构件中的微波朝向通孔引导至 注射器内部