公开(公告)号：US10374057B2

公开(公告)日：2019-08-06

申请号：US15730853

申请日：2017-10-12

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L21/306 ,  H01L29/201 ,  H01L29/417 ,  H01L29/45 ,  H01L29/778 ,  H01L29/66 ,  H01L21/283 ,  H01L29/20 ,  H01L21/285

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

公开(公告)号：US10134596B1

公开(公告)日：2018-11-20

申请号：US15820168

申请日：2017-11-21

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Dong Seup Lee ,  Yoshikazu Kondo ,  Pinghai Hao ,  Sameer Pendharkar

IPC: H01L29/205 ,  H01L21/28 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66 ,  H01L29/51 ,  H01L29/778 ,  H01L21/02

Abstract: In some embodiments, an apparatus includes a first layer with a first surface and a second surface opposite to the first surface. The apparatus also includes a second layer having a third surface interfacing the second surface and a fourth surface opposite the third surface. The apparatus further includes a third layer having a fifth surface interfacing the fourth surface and a sixth surface opposite the fifth surface. The apparatus also includes a fourth layer having a seventh surface interfacing the sixth surface to form a heterojunction, which generates a two-dimensional electron gas channel formed in the fourth layer. Further, the apparatus includes a recess that extends from the first surface to the fifth surface.