公开(公告)号：US11996254B2

公开(公告)日：2024-05-28

申请号：US18346298

申请日：2023-07-03

Applicant: Texas Instruments Incorporated

Inventor： Yogesh K. Ramadass ,  Ujwal Radhakrishna ,  Vinod Kuniganahalli Rai

IPC: H01H85/048 ,  H01H85/00 ,  H01H85/02 ,  H02H9/04

CPC classification number: H01H85/048 ,  H01H85/0052 ,  H01H85/0241 ,  H02H9/042

Abstract: A method comprises: forming a first metallization layer on a semiconductor die, the first metallization layer including a metal fuse; and forming a second metallization layer on the first metallization layer, in which the second metallization layer includes a thermal conductor spaced from the metal fuse, and the first metallization layer is between the second metallization layer and the semiconductor die.

公开(公告)号：US20240088647A1

公开(公告)日：2024-03-14

申请号：US18512134

申请日：2023-11-17

Applicant: Texas Instruments Incorporated

Inventor： Yogesh Kumar Ramadass ,  Ujwal Radhakrishna ,  Jeffrey Morroni

IPC: H02H7/20 ,  H01L23/525 ,  H03K17/687

CPC classification number: H02H7/20 ,  H01L23/5256 ,  H03K17/6871

Abstract: In one example, an apparatus comprises: a first switch and a second switch coupled between a fuse terminal and a ground terminal, the first switch having a first switch control terminal, the second switch having a second switch control terminal; and a driver circuit having a control input, a first control output, and a second control output, the control input coupled to the fuse terminal, the first control output coupled to the first switch control terminal, and the second control output coupled to the second switch control terminal.

公开(公告)号：US20240047387A1

公开(公告)日：2024-02-08

申请号：US18490866

申请日：2023-10-20

Applicant: Texas Instruments Incorporated

Inventor： Alexei Sadovnikov ,  Sheldon Douglas Haynie ,  Ujwal Radhakrishna

IPC: H01L23/64 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L23/647 ,  H01L29/401 ,  H01L29/404 ,  H01L29/407 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/66659 ,  H01L29/7835 ,  H01L2223/6672

Abstract: A microelectronic device includes a doped region of semiconductor material having a first region and an opposite second region. The microelectronic device is configured to provide a first operational potential at the first region and to provide a second operational potential at the second region. The microelectronic device includes field plate segments in trenches extending into the doped region. Each field plate segment is separated from the semiconductor material by a trench liner of dielectric material. The microelectronic device further includes circuitry electrically connected to each of the field plate segments. The circuitry is configured to apply bias potentials to the field plate segments. The bias potentials are monotonic with respect to distances of the field plate segments from the first region of the doped region.

公开(公告)号：US20230343539A1

公开(公告)日：2023-10-26

申请号：US18346298

申请日：2023-07-03

Applicant: Texas Instruments Incorporated

Inventor： Yogesh K. Ramadass ,  Ujwal Radhakrishna ,  Vinod Kuniganahalli Rai

IPC: H01H85/02 ,  H01H85/00 ,  H02H9/04 ,  H01H85/048

CPC classification number: H01H85/048 ,  H01H85/0052 ,  H01H85/0241 ,  H02H9/042

Abstract: A method comprises: forming a first metallization layer on a semiconductor die, the first metallization layer including a metal fuse; and forming a second metallization layer on the first metallization layer, in which the second metallization layer includes a thermal conductor spaced from the metal fuse, and the first metallization layer is between the second metallization layer and the semiconductor die.

公开(公告)号：US20230099861A1

公开(公告)日：2023-03-30

申请号：US17490157

申请日：2021-09-30

Applicant: Texas Instruments Incorporated

Inventor： Yogesh K. Ramadass ,  Ujwal Radhakrishna ,  Vinod Kuniganahalli Rai

IPC: H01H85/048 ,  H01H85/00 ,  H01H85/02 ,  H02H9/04

Abstract: An electronic device includes an input, an output, a metal fuse, a resistor, a heat control transistor, and a heat controller. The metal fuse is coupled between the input and the output. The resistor is coupled between the metal fuse and the heat control transistor. The heat control transistor is coupled between the resistor and a reference terminal of the electronic device, and the heat controller is configured to control a heater current of the heat control transistor.

公开(公告)号：US20220367388A1

公开(公告)日：2022-11-17

申请号：US17318556

申请日：2021-05-12

Applicant: Texas Instruments Incorporated

Inventor： Alexei Sadovnikov ,  Sheldon Douglas Haynie ,  Ujwal Radhakrishna

IPC: H01L23/64 ,  H01L29/40 ,  H01L29/78 ,  H01L29/66

Abstract: A microelectronic device includes a doped region of semiconductor material having a first region and an opposite second region. The microelectronic device is configured to provide a first operational potential at the first region and to provide a second operational potential at the second region. The microelectronic device includes field plate segments in trenches extending into the doped region. Each field plate segment is separated from the semiconductor material by a trench liner of dielectric material. The microelectronic device further includes circuitry electrically connected to each of the field plate segments. The circuitry is configured to apply bias potentials to the field plate segments. The bias potentials are monotonic with respect to distances of the field plate segments from the first region of the doped region.