公开(公告)号：US10510580B2

公开(公告)日：2019-12-17

申请号：US16103988

申请日：2018-08-16

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chin-Hsiang Lin ,  Keng-Chu Lin ,  Shwang-Ming Jeng ,  Teng-Chun Tsai ,  Tsu-Hsiu Perng ,  Fu-Ting Yen

IPC: H01L27/088 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234

Abstract: An embodiment method includes depositing a first dielectric film over and along sidewalls of a semiconductor fin, the semiconductor fin extending upwards from a semiconductor substrate. The method further includes depositing a dielectric material over the first dielectric film; recessing the first dielectric film below a top surface of the semiconductor fin to define a dummy fin, the dummy fin comprising an upper portion of the dielectric material; and forming a gate stack over and along sidewalls of the semiconductor fin and the dummy fin.

公开(公告)号：US20190148151A1

公开(公告)日：2019-05-16

申请号：US16025708

申请日：2018-07-02

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yasutoshi Okuno ,  Teng-Chun Tsai ,  Ziwei Fang ,  Fu-Ting Yen

IPC: H01L21/28 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49 ,  H01L29/51

Abstract: A method includes removing a dummy gate stack to form an opening between gate spacers, selectively forming an inhibitor film on sidewalls of the gate spacers, with the sidewalls of the gate spacers facing the opening, and selectively forming a dielectric layer over a surface of a semiconductor region. The inhibitor film inhibits growth of the dielectric layer on the inhibitor film. The method further includes removing the inhibitor film, and forming a replacement gate electrode in a remaining portion of the opening.