Oscillator compensation using bias current

    公开(公告)号:US11075602B1

    公开(公告)日:2021-07-27

    申请号:US16821166

    申请日:2020-03-17

    Inventor: Pio Balmelli

    Abstract: In one embodiment, an apparatus includes: a bias circuit having a replica circuit, the bias circuit to generate an oscillator current that is proportional to a variation of the replica circuit; an oscillator circuit coupled to the bias circuit to receive the oscillator current and generate a plurality of signals using the oscillator current; and a waveform shaper circuit coupled to the oscillator circuit to receive the plurality of signals and generate at least one clock signal from the plurality of signals.

    HIGHLY LINEAR BUFFER
    13.
    发明申请
    HIGHLY LINEAR BUFFER 有权
    高线性缓存器

    公开(公告)号:US20150123714A1

    公开(公告)日:2015-05-07

    申请号:US14074241

    申请日:2013-11-07

    CPC classification number: H03K17/16 H03K2217/0063

    Abstract: Techniques relating to buffer circuits. In one embodiment, a circuit includes a first transistor configured as a source follower and a feed-forward path coupled to the gate terminal of the first transistor and the drain terminal of the first transistor. In this embodiment, the feed-forward path includes circuitry configured to decouple the feed-forward path from a DC component of an input signal to the gate terminal of the first transistor. In this embodiment, the circuitry is configured to reduce a drain-source voltage of the first transistor based on the input signal. In some embodiment, the feed-forward path includes a second transistor configured as a source follower and the source terminal of the second transistor is coupled to the drain terminal of the first transistor. In various embodiments, reducing the drain-source voltage may improve linearity of the first transistor.

    Abstract translation: 与缓冲电路有关的技术。 在一个实施例中,电路包括配置为源极跟随器的第一晶体管和耦合到第一晶体管的栅极端子和第一晶体管的漏极端子的前馈通路。 在该实施例中,前馈路径包括被配置为将前馈路径与输入信号的DC分量去耦到第一晶体管的栅极端子的电路。 在该实施例中,电路被配置为基于输入信号来减小第一晶体管的漏 - 源电压。 在一些实施例中,前馈路径包括配置为源极跟随器的第二晶体管,并且第二晶体管的源极端子耦合到第一晶体管的漏极端子。 在各种实施例中,减小漏极 - 源极电压可以提高第一晶体管的线性。

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