公开(公告)号：US08129804B2

公开(公告)日：2012-03-06

申请号：US13168561

申请日：2011-06-24

Applicant: Shogo Inaba ,  Akira Sato

Inventor： Shogo Inaba ,  Akira Sato

IPC: H01L29/84

CPC classification number: B81B3/0075 ,  H01L24/05 ,  H01L2224/05554 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00

Abstract: An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.

Abstract translation: 电子设备包括基板，形成在基板上的功能结构体和用于限定具有设置在其中的功能结构体的空腔部分的覆盖结构，其中覆盖结构设置有设置在基板上的侧壁， 围绕空腔部分的绝缘层和布线层; 覆盖所述空腔部的上部的第一覆盖层，具有穿过所述空腔部的开口，由包含耐腐蚀层的层叠结构构成的第一覆盖层; 以及用于封闭开口的第二覆盖层。

公开(公告)号：US08115266B2

公开(公告)日：2012-02-14

申请号：US13170628

申请日：2011-06-28

Applicant: Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

Inventor： Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

IPC: H01L27/14 ,  H01L29/82 ,  H01L29/84 ,  H01L23/48

CPC classification number: B81B3/0086 ,  B81B2201/0271

Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

Abstract translation: 微机电系统（MEMS）器件包括半导体衬底，包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极，以及形成在固定电极下方的半导体衬底中的阱。 井是n型井和p型井之一。 p型阱对固定电极施加正电压，而n型阱对固定电极施加负电压。

公开(公告)号：US07989905B2

公开(公告)日：2011-08-02

申请号：US12981747

申请日：2010-12-30

Applicant: Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

Inventor： Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

IPC: H01L29/84 ,  H01L27/14 ,  H01L29/82 ,  H01L23/48

CPC classification number: B81B3/0086 ,  B81B2201/0271

Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

公开(公告)号：US07956709B2

公开(公告)日：2011-06-07

申请号：US11832038

申请日：2007-08-01

Applicant: Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

Inventor： Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

IPC: H01H51/22

CPC classification number: H01H59/0009 ,  H01C10/50 ,  Y10T29/49105

Abstract: A micro-electro mechanical system (MEMS) switch includes a fixed electrode formed on a substrate, and a movable electric resistor formed on the substrate, the movable electric resistor serving as an electric resistor that divides an electric potential where the MEMS switch is set to a conduction state.

Abstract translation: 微机电系统（MEMS）开关包括形成在基板上的固定电极和形成在基板上的可移动电阻器，可移动电阻器用作将MEMS开关设置为的电位分开的电阻器 导通状态。

公开(公告)号：US20110121908A1

公开(公告)日：2011-05-26

申请号：US13012099

申请日：2011-01-24

Applicant: Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

Inventor： Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

IPC: H03K3/36

CPC classification number: H03H3/0073 ,  H03H9/1057 ,  Y10S977/721

Abstract: A resonator with a microeletromechanical system structure has a transistor with a gate electrode, a capacitor with an upper and lower electrode, a substrate, a first and second structure of the microelectromechanical system structure, a first silicon layer of the first structure and the upper electrode formed above the substrate, a second silicon layer of the second structure and the gate electrode unit formed above the substrate, and an insulating film formed above the capacitor and the transistor, the insulating film having an opening for placement of the second structure.

Abstract translation: 具有微机电系统结构的谐振器具有具有栅电极的晶体管，具有上电极和下电极的电容器，基板，微机电系统结构的第一和第二结构，第一结构的第一硅层和上电极 形成在基板上方，第二结构的第二硅层和形成在基板上的栅电极单元，以及形成在电容器和晶体管上方的绝缘膜，绝缘膜具有用于放置第二结构的开口。

公开(公告)号：US07892875B2

公开(公告)日：2011-02-22

申请号：US12684336

申请日：2010-01-08

Applicant: Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

Inventor： Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

IPC: H01L21/00

CPC classification number: H03H3/0073 ,  H03H9/1057 ,  Y10S977/721

Abstract: A method is for manufacturing a microelectromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.

Abstract translation: 一种用于制造具有形成在基板上的半导体器件和微机电系统结构单元的微机电系统谐振器的方法。 该方法包括：使用第一硅层形成包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的下电极; 使用第二硅层形成微机电系统结构单元的子结构和包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的上电极; 以及使用第三硅层形成所述微机电系统结构单元的上部结构和包括在所述半导体器件中的互补金属氧化物半导体电路单元的栅电极。

公开(公告)号：US07709912B2

公开(公告)日：2010-05-04

申请号：US11875383

申请日：2007-10-19

Applicant: Akira Sato ,  Toru Watanabe ,  Shogo Inaba ,  Takeshi Mori

Inventor： Akira Sato ,  Toru Watanabe ,  Shogo Inaba ,  Takeshi Mori

IPC: H01L31/00

CPC classification number: B81C1/00246 ,  B81B2207/015 ,  B81B2207/07 ,  B81C2203/0136 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01L21/7682 ,  H01L24/05 ,  H01L2924/14 ,  H01L2924/00

Abstract: An electronic device, including a substrate, a functional structure constituting a functional element formed on the substrate, and a cover structure forming a cavity portion in which the functional structure is disposed, is disclosed. In the electronic device, the cover structure includes a laminated structure of an interlayer insulating film and a wiring layer, the laminated structure being formed on the substrate in such a way that it surrounds the cavity portion, and the cover structure has an upside cover portion covering the cavity portion from above, the upside cover portion being formed with part of the wiring layer that is disposed above the functional structure.

Abstract translation: 公开了一种电子设备，包括基板，构成在基板上形成的功能元件的功能结构，以及形成其中设置有功能结构的空腔部分的盖结构。 在电子设备中，盖结构包括层间绝缘膜和布线层的叠层结构，层叠结构以包围空腔部分的方式形成在基板上，并且盖结构具有上侧盖部分 从上方覆盖空腔部分，上侧盖部分形成有设置在功能结构上方的布线层的一部分。

公开(公告)号：US08796845B2

公开(公告)日：2014-08-05

申请号：US13286494

申请日：2011-11-01

Applicant: Yoko Kanemoto ,  Akira Sato ,  Shogo Inaba

Inventor： Yoko Kanemoto ,  Akira Sato ,  Shogo Inaba

IPC: H01L23/02 ,  H01L23/06 ,  H01L23/04

CPC classification number: B81C1/00333 ,  B81C2203/0145

Abstract: An electronic device according to the invention includes: a substrate; an MEMS structure formed above the substrate; and a covering structure defining a cavity in which the MEMS structure is arranged, wherein the covering structure has a first covering layer covering from above the cavity and having a through-hole in communication with the cavity and a second covering layer formed above the first covering layer and closing the through-hole, the first covering layer has a first region located above at least the MEMS structure and a second region located around the first region, the first covering layer is thinner in the first region than in the second region, and a distance between the substrate and the first covering layer in the first region is longer than a distance between the substrate and the first covering layer in the second region.

Abstract translation: 根据本发明的电子设备包括：基板; 在衬底上形成的MEMS结构; 以及限定了其中布置有MEMS结构的空腔的覆盖结构，其中所述覆盖结构具有从所述空腔上方覆盖并具有与所述空腔连通的通孔的第一覆盖层和形成在所述第一覆盖物上方的第二覆盖层 并且关闭所述通孔，所述第一覆盖层具有位于至少所述MEMS结构之上的第一区域和位于所述第一区域周围的第二区域，所述第一覆盖层在所述第一区域中比在所述第二区域中更薄，以及 第一区域中的基板和第一覆盖层之间的距离比第二区域中的基板和第一覆盖层之间的距离长。

公开(公告)号：US08395227B2

公开(公告)日：2013-03-12

申请号：US13344964

申请日：2012-01-06

Applicant: Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

Inventor： Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

IPC: H01L29/84 ,  H01L21/00

CPC classification number: B81B3/0086 ,  B81B2201/0271

Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

Abstract translation: 微机电系统（MEMS）器件包括半导体衬底，包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极，以及形成在固定电极下方的半导体衬底中的阱。 井是n型井和p型井之一。 p型阱对固定电极施加正电压，而n型阱对固定电极施加负电压。

公开(公告)号：US08362577B2

公开(公告)日：2013-01-29

申请号：US13012099

申请日：2011-01-24

Applicant: Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

Inventor： Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

IPC: H01L29/84

CPC classification number: H03H3/0073 ,  H03H9/1057 ,  Y10S977/721

Abstract: A resonator with a microeletromechanical system structure has a transistor with a gate electrode, a capacitor with an upper and lower electrode, a substrate, a first and second structure of the microelectromechanical system structure, a first silicon layer of the first structure and the upper electrode formed above the substrate, a second silicon layer of the second structure and the gate electrode unit formed above the substrate, and an insulating film formed above the capacitor and the transistor, the insulating film having an opening for placement of the second structure.

Abstract translation: 具有微机电系统结构的谐振器具有具有栅电极的晶体管，具有上电极和下电极的电容器，基板，微机电系统结构的第一和第二结构，第一结构的第一硅层和上电极 形成在基板上方，第二结构的第二硅层和形成在基板上的栅电极单元，以及形成在电容器和晶体管上方的绝缘膜，绝缘膜具有用于放置第二结构的开口。