公开(公告)号：US20180157394A1

公开(公告)日：2018-06-07

申请号：US15874279

申请日：2018-01-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Hideaki KUWABARA ,  Koji DAIRIKI

IPC: G06F3/0488 ,  G06F1/32

Abstract: A data processing device which includes a flexible position input portion for sensing proximity or a touch of an object such as a user's palm and finger. In the case where a first region of the flexible position input portion is held by a user for a certain period, supply of image signals to the first region is selectively stopped.

公开(公告)号：US20150034947A1

公开(公告)日：2015-02-05

申请号：US14444789

申请日：2014-07-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Masashi OOTA ,  Koji DAIRIKI ,  Masahiro TAKAHASHI

IPC: H01L29/04 ,  H01L29/786 ,  H01L29/24

CPC classification number: H01L29/045 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: A crystalline oxide semiconductor film which can be used as a semiconductor film of a transistor or the like is provided. In particular, a crystalline oxide semiconductor film with less defects such as grain boundaries is provided. One embodiment of the present invention is a crystalline oxide semiconductor film which is provided over a substrate and has a region including five or less areas where a transmission electron diffraction pattern showing discontinuous points is observed when an observation area is changed one-dimensionally within a range of 700 nm, using a transmission electron diffraction apparatus with an electron beam having a probe diameter of 1 nm.

Abstract translation: 可以提供可用作晶体管等的半导体膜的结晶氧化物半导体膜。 特别地，提供了具有较少缺陷如晶界的结晶氧化物半导体膜。 本发明的一个实施方案是一种结晶氧化物半导体膜，其设置在基板上并且具有包括五个或更少区域的区域，其中当观察区域在一个范围内改变时观察到显示不连续点的透射电子衍射图案 使用具有探针直径为1nm的电子束的透射电子衍射装置。

公开(公告)号：US20210118916A1

公开(公告)日：2021-04-22

申请号：US17133708

申请日：2020-12-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo ISOBE ,  Shunpei YAMAZAKI ,  Koji DAIRIKI ,  Hiroshi SHIBATA ,  Chiho KOKUBO ,  Tatsuya ARAO ,  Masahiko HAYAKAWA ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA ,  Koichiro TANAKA ,  Mai AKIBA

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/3213 ,  H01L21/84 ,  H01L29/66 ,  H01L29/786 ,  B23K26/073

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries rom lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

公开(公告)号：US20190341404A1

公开(公告)日：2019-11-07

申请号：US16515117

申请日：2019-07-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo ISOBE ,  Shunpei YAMAZAKI ,  Koji DAIRIKI ,  Hiroshi SHIBATA ,  Chiho KOKUBO ,  Tatsuya ARAO ,  Masahiko HAYAKAWA ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA ,  Koichiro TANAKA ,  Mai AKIBA

IPC: H01L27/12 ,  H01L21/3213 ,  H01L21/02 ,  H01L29/786 ,  H01L21/84 ,  B23K26/073 ,  H01L21/20 ,  H01L29/66

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

公开(公告)号：US20170025546A1

公开(公告)日：2017-01-26

申请号：US15286194

申请日：2016-10-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Chiho KOKUBO ,  Aiko SHIGA ,  Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Koichiro TANAKA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04

CPC classification number: H01L29/78675 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/127 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757

Abstract: A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.

Abstract translation: 首先形成在其一侧具有多个尖锐的凸顶部的半导体区域的第一形状，并且使用连续波激光束进行来自上述区域的辐射，以使半导体区域的第一形状结晶化。 在一条或多条线路中聚光的连续波激光束用于激光束。 蚀刻半导体区域的第一形状以形成其中形成沟道形成区域和源极和漏极区域的半导体区域的第二形状。 半导体区域的第二形状被设置成在从多个凸起端部延伸的各个晶体区域上形成沟道形成范围。 消除了与沟道形成区域相邻的半导体区域。

公开(公告)号：US20150153861A1

公开(公告)日：2015-06-04

申请号：US14552214

申请日：2014-11-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Hideaki KUWABARA ,  Koji DAIRIKI

IPC: G06F3/041

CPC classification number: G06F3/0488 ,  G06F1/3265 ,  G06F2203/04101 ,  G06F2203/04104 ,  G06F2203/04108 ,  Y02B70/123 ,  Y02D10/153

Abstract: A data processing device with low power consumption is provided. The data processing device includes a flexible position input portion for sensing proximity or a touch of an object such as a user's palm and finger. The flexible position input portion overlaps with a display portion and includes a first region, a second region facing the first region, and a third region between the first region and the second region. In the case where part of the first region or the second region is held by a user for a certain period, supply of image signals to the part is selectively stopped. Alternatively, a sensing in the part is selectively stopped.

Abstract translation: 提供一种低功耗的数据处理装置。 数据处理装置包括用于感测物体（例如用户的手掌和手指）的接近或触摸的柔性位置输入部分。 柔性位置输入部分与显示部分重叠，并且包括第一区域，面向第一区域的第二区域以及第一区域和第二区域之间的第三区域。 在第一区域或第二区域的一部分由使用者持续一定时间的情况下，选择性地停止对该部件的图像信号的供给。 或者，选择性地停止部件中的感测。