Abstract:
Provided is an optical device which includes an active layer which includes at least two outer barriers and at least one coupled quantum well, each of the at least one coupled quantum well is sandwiched between the at least two outer barriers. Each of the at least one coupled quantum well includes at least three quantum well layers and at least two coupling barriers interposed between the at least three quantum layers. The at least two coupling barriers have a potential energy which is higher than a ground level and is lower than energy levels of the at least two outer barriers.
Abstract:
A 3-dimensional (3D) image acquisition apparatus capable of simultaneously obtaining a color image and a depth image in a single shooting operation is provided. The apparatus includes a light source for radiating illumination light having a predetermined wavelength onto an object; a lens unit having at least four object lenses; an image sensor including at least four sensing regions for individually receiving light focused by the object lenses and for generating images; and at least three optical shutters individually facing at least three of the at least four object lenses and for modulating incident light with predetermined gain waveforms.
Abstract:
An optical modulator and a 3D image acquisition apparatus including an optical modulator are provided. The optical modulator is disposed in a multiple quantum well including a plurality of quantum wells and a plurality of quantum barriers, and includes at least one carrier block disposed in the multiple quantum well restricting the carrier movement between the multiple quantum wells.
Abstract:
Provided are a depth camera and methods of measuring a depth image by using the depth camera. The depth camera is a time-of-flight (TOF) depth camera including: an illumination device that illuminates a patterned light to an object; a filter unit that reduces noise light included in light reflected by the object; and an image sensor that provides a depth image of the object by receiving light that enters through the filter unit. The illumination device includes: a light source; and a patterned light generator that changes the light emitted from the light source into the patterned light. The filter unit includes a band pass filter and an optical modulator. The patterned light generator may be a diffractive optical element or a refractive optical element.
Abstract:
An optical device includes a gallium arsenide (GaAs) substrate, and a multiple quantum well structure formed on the GaAs substrate and having a quantum well layer and a quantum barrier layer. In the optical device, the quantum well layer is formed of a first semiconductor material that has a bandgap energy which is lower than that of the GaAs substrate and receives a compressive strain from the GaAs substrate, and the quantum barrier layer is formed of a second semiconductor material that has a bandgap energy which is higher than that of the GaAs substrate and receives a tensile strain from the GaAs substrate.
Abstract:
Disclosed are a transparent optical shutter which may be manufactured at the wafer level, and a method of manufacturing a transparent optical shutter at the wafer level. In the disclosed optical shutter, a polymer-based material is used as a transparent protective layer for ensuring the mechanical or chemical stability of the optical shutter, and thus, the shutter may be manufactured at the wafer level in large quantities. Also, a layer which is optically transparent and has excellent heat conductivity is disposed under the transparent protective layer.
Abstract:
An optoelectronic shutter, a method of operating the same, and an optical apparatus including the optoelectronic shutter are provided. The optoelectronic shutter includes a phototransistor which generates an output signal from incident input light and a light emitting diode serially connected to the phototransistor. The light emitting diode outputs output light according to the output signal, and the output signal is gain-modulated according to a modulation of a current gain of the phototransistor.
Abstract:
Provided is a 3-dimensional (3D) image acquisition apparatus and a method of driving the same. The 3D image acquisition apparatus includes a light source, an optical shutter, an image sensor, an image signal processor, and a controller. The light source is configured to project illumination light on an object. The optical shutter is configured to modulate the illumination light reflected from the object with a predetermined gain waveform. The image sensor is configured to generate a depth image by detecting the illumination light modulated by the optical shutter. The image signal processor is configured to calculate a distance from the 3D image acquisition apparatus to the object using the depth image generated by the image sensor. The controller is configured to control an operation of the light source and an operation of the optical shutter.
Abstract:
An imaging optical system and a three-dimensional (3D) image acquisition apparatus which includes the imaging optical system are provided. The imaging optical system includes an object lens configured to transmit light; first and second image sensors having different sizes from each other; a beamsplitter on which the light transmitted by the object lens is incident, the beamsplitter being configured to split the light incident thereon into light of a first wavelength band and light of a second wavelength band, and to direct the light of the first wavelength band to the first image sensor and the light of the second wavelength band to the second image sensor; and at least one optical element, disposed between the beamsplitter and the second image sensor, configured to reduce an image that is incident on the second image sensor, the optical element including at least one of a Fresnel lens and a diffractive optical element.
Abstract:
An infrared transmission large-area shutter is provided. The infrared transmission large-area shutter includes a first contact layer on a substrate, a plurality of stacks formed in a two-dimensional (2D) array pattern on a first region of the first contact layer, each stack comprising a lower reflection layer, an active layer, an upper reflection layer, and a second contact layer which are formed sequentially in this order on the first contact layer, a first electrode formed on the first contact layer, a plurality of second electrodes on the second contact layers, a first polymer layer that surrounds sidewalls of the plurality of stacks on the first contact layer, and a second polymer layer, which is transparent to infrared rays, to cover the second electrode on the second contact layer. A through hole corresponding to the plurality of stacks is formed in the substrate.