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11.发明公开公开(公告)号：US20240065018A1
公开(公告)日：2024-02-22
申请号：US18498727
申请日：2023-10-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hongkyu SEO , Kwanghee KIM , Eun Joo JANG , Won Sik YOON , Tae Hyung KIM , Tae Ho KIM
CPC classification number: H10K50/16 , H10K71/00 , H10K85/60 , H10K50/115
Abstract: Light emitting device, method of manufacturing the light emitting device, and display device including the light emitting device are disclosed. The light emitting device includes a first electrode and a second electrode each having a surface opposite the other, a light emitting layer including quantum dots that is disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles including an anion of an organic acid bound to a surface of the metal oxide nanoparticle.
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公开(公告)号：US20230392074A1
公开(公告)日：2023-12-07
申请号：US18452631
申请日：2023-08-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeong Hee LEE , Eun Joo JANG , Hyun A KANG , Tae Hyung KIM
CPC classification number: C09K11/883 , C09K11/02 , C09K11/565 , H10K50/115
Abstract: A semiconductor nanocrystal particle including zinc (Zn), tellurium (Te) and selenium (Se), a method of producing the same, and an electronic device including the same are disclosed. In the semiconductor nanocrystal particle, an amount of the tellurium is less than an amount of the selenium, the particle includes a core including a first semiconductor material including zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and including a second semiconductor material having a different composition from the first semiconductor material, and the semiconductor nanocrystal particle emits blue light including a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.
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公开(公告)号：US20230313038A1
公开(公告)日：2023-10-05
申请号：US18302341
申请日：2023-04-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Woo KIM , Jin A. KIM , Tae Hyung KIM , Jeong Hee LEE , Eun Joo JANG
CPC classification number: C09K11/883 , C09K11/565 , H10K50/115
Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.
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公开(公告)号：US20230212456A1
公开(公告)日：2023-07-06
申请号：US18113650
申请日：2023-02-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho WON , Sung Woo KIM , Jin A KIM , Jeong Hee LEE , Tae Hyung KIM , Eun Joo JANG
CPC classification number: C09K11/883 , C09K11/02 , H05B33/14 , H10K50/15 , H10K50/16 , H10K50/17 , H10K50/115 , H10K50/171 , B82Y20/00
Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.
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公开(公告)号：US20230071604A1
公开(公告)日：2023-03-09
申请号：US18054687
申请日：2022-11-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Woo KIM , Jin A KIM , Tae Hyung KIM , Kun Su PARK , Yuho WON , Jeong Hee LEE , Eun Joo JANG , Eun Joo JANG , Hyo Sook JANG , Yong Seok HAN , Heejae CHUNG
Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.
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Patent Agency Ranking
公开(公告)号：US20220220379A1
公开(公告)日：2022-07-14
申请号：US17709830
申请日：2022-03-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeong Hee LEE , Eun Joo JANG , Hyun A KANG , Tae Hyung KIM
Abstract: A semiconductor nanocrystal particle including zinc (Zn), tellurium (Te) and selenium (Se), a method of producing the same, and an electronic device including the same are disclosed. In the semiconductor nanocrystal particle, an amount of the tellurium is less than an amount of the selenium, the particle includes a core including a first semiconductor material including zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and including a second semiconductor material having a different composition from the first semiconductor material, and the semiconductor nanocrystal particle emits blue light including a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.
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公开(公告)号：US20210257551A1
公开(公告)日：2021-08-19
申请号：US17171008
申请日：2021-02-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Won Sik YOON , Moon Gyu HAN , Kwanghee KIM , Heejae LEE , Eun Joo JANG , Tae Hyung KIM , Hyo Sook JANG
IPC: H01L51/00
Abstract: A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the quantum dot layer and the second electrode and including first inorganic nanoparticles and a first organic material, and an electron injection layer disposed between the electron transport layer and the second electrode and including second inorganic nanoparticles and a second organic material, wherein a ratio by weight of an amount of the second organic material to a total amount of the second inorganic nanoparticles and the second organic material in the electron injection layer is less than a ratio by weight of an amount of the first organic material to a total amount of the first inorganic nanoparticles and the first organic material in the electron transport layer. An electronic device including the quantum dot device.
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公开(公告)号：US20210226172A1
公开(公告)日：2021-07-22
申请号：US17226158
申请日：2021-04-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dae Young CHUNG , Moon Gyu HAN , Oul CHO , Tae Hyung KIM , Sujin PARK , Hongkyu SEO , Eun Joo JANG
Abstract: An electroluminescent device including a first electrode, a hole transport layer disposed on the first electrode, a first emission layer disposed on the hole transport layer, the first emission layer including a first light emitting particle on which a first ligand and a second ligand having a hole transporting property are attached, a second emission layer disposed on the first emission layer, the second emission layer including a second light emitting particle on which a first ligand and a third ligand having an electron transporting property are attached, an electron transport layer disposed on the second emission layer, and a second electrode disposed on the electron transport layer, wherein a solubility of the second ligand in a solvent is different than a solubility of the third ligand in the solvent and a display device including the same.
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公开(公告)号：US20210207027A1
公开(公告)日：2021-07-08
申请号：US17187926
申请日：2021-03-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho WON , Sung Woo KIM , Jin A KIM , Jeong Hee LEE , Tae Hyung KIM , Eun Joo JANG
Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.
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公开(公告)号：US20200335715A1
公开(公告)日：2020-10-22
申请号：US16851276
申请日：2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD
Inventor： Dae Young CHUNG , Kwanghee KIM , Eun Joo JANG , Tae Hyung KIM , Hongkyu SEO , Heejae LEE , Jaejun CHANG
Abstract: A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.
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