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公开(公告)号:US12288674B2
公开(公告)日:2025-04-29
申请号:US17859316
申请日:2022-07-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyosin Kim , Sungyong Lim , Minsung Kim , Dongyub Kim , Sungyeol Kim , Jongbeom Moon , Seungbo Shim
Abstract: Provided are a hybrid matcher capable of precisely performing impedance matching at a high speed when RF power is applied with a multi-level pulse in a facility using RF plasma, and an RF matching system including the hybrid matcher. The hybrid matcher includes a matching circuit in which a plurality of variable element-switch sets are connected to each other in parallel, the variable element-switch sets each including a variable impedance element and a switch connected to the variable impedance element in series and electrically operating therewith, a sensor disposed at a front stage of the matching circuit and configured to measure a current and a voltage of radio frequency (RF) power applied from an RF generator, a variable element driver configured to drive the variable impedance element, a switch driver configured to drive the switch, and a controller configured to control the variable element driver and the switch driver.
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12.
公开(公告)号:US20250004028A1
公开(公告)日:2025-01-02
申请号:US18884376
申请日:2024-09-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinyeong Yun , Meehyun Lim , Sungjin Kim , Masahiko Yamabe , Sungyeol Kim , Sungyong Lim , Sunghwi Cho
IPC: G01R29/12 , H01L21/66 , H01L21/683 , H01L21/687
Abstract: An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.
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13.
公开(公告)号:US20240055243A1
公开(公告)日:2024-02-15
申请号:US18124954
申请日:2023-03-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Taekjin Kim , Meehyun Lim , Sungyeol Kim , Junbum Park , Sungyoung Yoon , Jinyeong Yun , Jungchul Lee , Sungyong Lim , Sunghwi Cho
IPC: H01J37/32 , H01L21/67 , H01L21/683
CPC classification number: H01J37/32972 , H01L21/67253 , H01L21/67069 , H01L21/6833 , H01J2237/24495
Abstract: A semiconductor equipment monitoring apparatus including a wafer-type sensor inside a process chamber and configured to sense a plasma state inside the process chamber; a light detector and analyzer configured to detect and analyze light sensed by the wafer-type sensor; and a light coupler between the wafer-type sensor and the light detector and analyzer and configured to transmit the light sensed by the wafer-type sensor to the light detector and analyzer. The wafer-type sensor includes a plurality of sensors each comprising a passive element.
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公开(公告)号:US20190122867A1
公开(公告)日:2019-04-25
申请号:US15991500
申请日:2018-05-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sang Ki Nam , Sunggil Kang , Sungyong Lim , Beomjin Yoo , Akira Koshiishi , Vasily Pashkovskiy , Kwangyoub Heo
Abstract: A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.
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