公开(公告)号：US12166093B2

公开(公告)日：2024-12-10

申请号：US17216903

申请日：2021-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Ki Min ,  Chae Ho Na ,  Sang Koo Kang ,  Ik Soo Kim ,  Dong Hyun Roh

IPC: H01L29/417 ,  H01L23/535 ,  H01L27/092 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device may include first and second fin-shaped patterns on a substrate, that extend in a first direction, and are spaced apart from each other in a second direction. A first epitaxial pattern may be on the first fin-shaped pattern, and a second epitaxial pattern may be on the second fin-shaped pattern. A field insulating layer may be on the substrate, and may cover a sidewall of the first fin-shaped pattern, a sidewall of the second fin-shaped pattern, a part of a sidewall of the first epitaxial pattern, and a part of a sidewall of the second epitaxial pattern. The top surface of the field insulating layer may be higher than the bottom surface of the first epitaxial pattern and the bottom surface of the second epitaxial pattern.

公开(公告)号：US12080798B2

公开(公告)日：2024-09-03

申请号：US17667608

申请日：2022-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chae Ho Na ,  Sung Soo Kim ,  Sun Ki Min ,  Dong Hyun Roh

IPC: H01L29/78 ,  H01L29/417

CPC classification number: H01L29/7851 ,  H01L29/41791

Abstract: Semiconductor devices and methods of forming the same are provided. The semiconductor devices may include a first fin-type pattern and a second fin-type pattern on a substrate, a first epitaxial pattern on the first fin-type pattern, a second epitaxial pattern on the second fin-type pattern, and a lower field insulating film on the substrate and extends on a sidewall of the first fin-type pattern and a sidewall of the second fin-type pattern, wherein the lower field insulating film includes a protrusion protruding in a third direction. The protrusion of the lower field insulating film may be between the first fin-type pattern and the second fin-type pattern, and a vertical level of a top surface of the protrusion of the lower field insulating film increases and then decreases with increasing distance from the sidewall of the first fin-type pattern.

公开(公告)号：US12040275B2

公开(公告)日：2024-07-16

申请号：US17489164

申请日：2021-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Ki Min

IPC: H01L23/535 ,  H01L21/768 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L23/535 ,  H01L21/76805 ,  H01L21/76895 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/7851 ,  H01L29/78696

Abstract: A semiconductor device includes a substrate, a gate structure, a source/drain pattern, first and second interlayer insulating layers, a first via plug connected to the source/drain pattern, and an etch stop structure layer, which may include a plurality of etch stop layers sequentially stacked. The etch stop structure layer may have a structure in relation to other components that improves aspects of the semiconductor device.