公开(公告)号：US08828751B2

公开(公告)日：2014-09-09

申请号：US13844569

申请日：2013-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Do Young Rhee ,  Tan Sakong ,  Ki Sung Kim ,  Suk Ho Yoon ,  Young Sun Kim ,  Sung Tae Kim

IPC: H01L21/00 ,  H01L33/00 ,  H01L33/26

CPC classification number: H01L33/005 ,  H01L33/26

Abstract: Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.

Abstract translation: 提供一种制造半导体发光器件的方法，该方法包括通过在衬底上生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构。 发光结构的形成包括：在形成发光结构的一部分之后形成保护层，在保护层上形成牺牲层; 并且在牺牲层上连续地形成发光结构的另一部分。

公开(公告)号：US10304990B2

公开(公告)日：2019-05-28

申请号：US15341259

申请日：2016-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon Han ,  Dong Yul Lee ,  Seung Hyun Kim ,  Jang Mi Kim ,  Suk Ho Yoon ,  Sang Jun Lee

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/14

Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

公开(公告)号：US09564316B2

公开(公告)日：2017-02-07

申请号：US14578940

申请日：2014-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Yul Lee ,  Sang Heon Han ,  Seung Hyun Kim ,  Jang Mi Kim ,  William Solari ,  Hyun Wook Shim ,  Suk Ho Yoon

IPC: H01L21/00 ,  H01L29/20 ,  H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  H01L33/00

CPC classification number: H01L21/0254 ,  C23C16/34 ,  C23C16/4404 ,  H01L21/02107 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02496 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007

Abstract: A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.

Abstract translation: 一种制造半导体器件的方法包括通过向处理室提供铝（Al）源，与处理室中的铝源接触的表面，在处理室的表面上形成铝化合物膜; 在形成铝化合物膜之后，在设置在处理室中的基座上设置晶片; 并在晶片上形成用于半导体器件的薄膜。

公开(公告)号：US09112105B1

公开(公告)日：2015-08-18

申请号：US14540969

申请日：2014-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Seung Yang ,  Seong Joon Cho ,  Bun Joon Kim ,  Dong Gyu Shin ,  Hyun Wook Shim ,  Suk Ho Yoon

IPC: H01L31/00 ,  H01L33/24 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/12

CPC classification number: H01L33/24 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/32

Abstract: The nitride semiconductor light emitting device includes a first conductivity-type nitride semiconductor layer, a first superlattice layer disposed on the first conductivity-type nitride semiconductor layer, a pit forming layer disposed on the first superlattice layer and having a plurality of V-shaped pits, a second superlattice layer, an active layer, and a second conductivity-type nitride semiconductor layer disposed on the active layer and filling the V-shaped pits. The second superlattice layer is disposed on the pit forming layer and has windings that have the same shape as a shape of windings generated by the V-shaped pits. The active layer is disposed on the second superlattice layer and has windings that have the same shape as the shape of the windings generated by the V-shaped pits.

Abstract translation: 氮化物半导体发光器件包括第一导电型氮化物半导体层，设置在第一导电型氮化物半导体层上的第一超晶格层，设置在第一超晶格层上并具有多个V形凹坑的凹坑形成层 ，第二超晶格层，有源层和设置在有源层上并填充V形凹坑的第二导电型氮化物半导体层。 第二超晶格层设置在凹坑形成层上，并且具有与由V形凹坑产生的绕组形状相同形状的绕组。 有源层设置在第二超晶格层上，并且具有与由V形凹坑产生的绕组形状相同形状的绕组。

公开(公告)号：US08846429B2

公开(公告)日：2014-09-30

申请号：US13846905

申请日：2013-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Ho Park ,  Ki Sung Kim ,  Chul Min Kim ,  Suk Ho Yoon ,  Tae Hyun Lee

IPC: H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L33/00

CPC classification number: H01L33/0079

Abstract: A method for manufacturing a semiconductor light emitting device is provided. The method includes forming a light emitting structure by sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a semiconductor growth substrate A support unit is disposed on the second conductivity-type semiconductor layer, so as to be combined with the light emitting structure. The semiconductor growth substrate is separated from the light emitting structure. An interface between the semiconductor growth substrate and a remaining light emitting structure is wet-etched such that the light emitting structure remaining on the separated semiconductor growth substrate is separated therefrom. The semiconductor growth substrate is cleaned.

Abstract translation: 提供一种制造半导体发光器件的方法。 该方法包括通过在半导体生长衬底上顺序生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构。支撑单元设置在第二导电型半导体层上， 以便与发光结构组合。 半导体生长衬底与发光结构分离。 湿式蚀刻半导体生长衬底和剩余的发光结构之间的界面，使得保留在分离的半导体生长衬底上的发光结构与其分离。 清洁半导体生长衬底。